TRANSISTOR C5D Search Results

Contextual Info: TOSHIBA 2SC5089 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5Q89 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • U n it in mm Low Noise Figure, High Gain. +G.5 3.5- a s N F —l.ldB , |S2 le|2—13dB f—1GHz •i a ii5 1 . 0 - 0.15 C5d MAXIMUM RATINGS (Ta = 25°C)

bvc62

Abstract: transistor BD 139 Transistor 5332 bvc62 smd philips 2322 734 UT70-25 smd transistor k2 2222 500 16641 transistor BD B1 SMD u 9330
Contextual Info: Philips Semiconductors Product specification UHF linear push-pull power transistor FEATURES BLV859 PINNING SOT262B • Double internal input and output matching for an optimum wideband capability and high gain • Polysilicon emitter ballasting resistors for an optimum

KTA1666

Abstract: KTC4379 OB2 SOT-89
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTC4379 EPITAXIAL PLANAR NPN TRANSISTOR POWER AMPLFIER APPLICATION. POWER SWITCHING APPLICATION. FEATURES • Low Saturation Voltage. : VcE sat =0.5V(Max.) (IC=1A) • High Speed Switching Time: tstg=1.0j/S(Typ.) • PC=1~2W (Mounted on Ceramic Substrate)

philips resistor 2322-153

Abstract: philips e3 SOT171 BLV97CE IEC134 ferroxcube wideband hf choke transistor C 548 B Philips
Contextual Info: bSE D Philips Semiconductors Product specification date of issue March 1993 711002b □□b30bö 75b IPHIN BLV97CE Data sheet status WM UHF power transistor FEATURES QUICK REFERENCE DATA • Internal input matching to achieve high power gain • Ballasting resistors for an optimum

Contextual Info: T O SH IB A RN2112,RN2113 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2112, RN2113 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • 1.6 ± 0.2 0.8 ± 0.1 With Built-in Bias Resistors

KTA1504S

Abstract: KTC3875S
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTA1504S EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent Iife Linearity : hFE 0.1m A /hF E (2m A )= 0.95(T yp.). DIM A B C D E G H J • Low Noise : NF=ldB(Typ.), 10dB(Max.).

IGBT K 40 T 1202

Contextual Info: TOSHIBA TF1207 TOSHIBA SOLID STATE IGBT GATE DRIVER MODULE T F 1 20 7 Unit in mm TOSHIBA TF1207 is the IGBT gate driver designed for use with TOSHIBA Insulated Gate Bipolar Transistor odule and it includes the optical isolator and IGBT gate driver circuit.

Contextual Info: TOSHIBA 2SC2716 TOSHIBA TRANSISTOR i SILICON NPN EPITAXIAL TYPE PCT PROCESS <;r i 7 1 fi U nit in mm HIGH FREQUENCY AM PLIFIER APPLICATIONS. AM HIGH FREQUENCY AM PLIFIER APPLICATIONS. + 0.5 3 .5 - Q 3 AM FREQUENCY CONVERTER APPLICATIOS. + 0.25 i.5-ai 5 f—

2SK210

Abstract: marking ADMI
Contextual Info: 2SK210 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK210 FM TUNER APPLICATIONS. VHF BAND AMPLIFIER APPLICATIONS. Unit in mm + 0 .5 2 .5 -0 .3 + 0 .2 5 1 .5 - Q l 5 • High Power Gain : Gpg = 24dB Typ. (f = 100MHz) • Low Noise Figure

Contextual Info: TOSHIBA 2SA1362 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 13 6 2 LOW FREQUENCY POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. U n it in mm + CL5 3 .5 - 0 .3 : + 0.85 • H igh D C C u rren t G ain h ^ E —120—400 •

2SK211

Abstract: 2SK211Y 2SK211GR 2L2 marking
Contextual Info: TOSHIBA 2SK211 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK211 Unit in mm FM TUNER APPLICATIONS. + 0.5 2 .5 - 0 .3 + 0.2 5 1 .5 - Q l 5 VHF BAND AM PLIFIER APPLICATIONS. Low Noise Figure : NF = 2.5dB Typ. (f=100MHz) High Forward Transfer Admitance : |Yfs| = 9mS (Typ.)

SC-59 marking c5d

Contextual Info: TOSHIBA 2SA1312 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS i <; a 1 w êêf m m • 31 1 m tr ■ AUDIO FREQUENCY LO W NOISE AM PLIFIER APPLICATIONS. Unit in mm • High Voltage : V q e q = —120V + 0.5 3.5-as • Excellent h pg Linearity

Contextual Info: TOSHIBA 2SK362 TO S H IB A FIELD EFFECT TRANSISTOR SILICON N C HANN EL JUNCTION TYPE 2SK362 Unit in mm FOR A U D IO AMPLIFIER, A N A L O G SW ITCH, CONSTANT CURRENT A N D .5.1 MAX. IM PEDANCE CONVERTER APPLICATIONS • High Breakdown Voltage : VGD g = —50V

Contextual Info: T O S H IB A TF1205 TOSHIBA SOLID STATE IGBT GATE DRIVER MODULE TF1 20 5 Unit in mm TOSHIBA TF1205 is the IGBT gate driver designed for use with TOSHIBA Insulated Gate Bipolar Transistor Module and it includes the optical isolator and IGBT gate driver circuit. Using this driver, you can design high reliability

TRANSISTOR SMD MARKING CODE

Abstract: 4E smd diode smd code marking sot23 smd diode marking code transistor marking code SOT-23 marking code s1 SMD diode MOSFET marking smd on semiconductor marking code sot MOSFET SMD MARKING CODE TRANSISTOR SMD npn MARKING CODE
Contextual Info: Discrete Semiconductor Sample Kit Low Power SMD Central Semiconductor Sample Kits provide designers with the discrete semiconductors ideally suited for the latest design challenges. The Low Power SMD Sample Kit includes a variety of diodes and MOSFETs suitable for general purpose

transistor marking 44 sot23

Abstract: marking code diode 04 Diode SMA marking code PD MARKING CODE 028a sot 23 schottky diode 40a marking 1PC on SEMICONDUCTOR MARKING transistor C5D SOT323 MOSFET P hFE-100
Contextual Info: Discrete Semiconductor Sample Kit DC-DC Power Supply Applications Central Semiconductor sample kits provide designers with the discrete semiconductor devices ideal for their latest design challenges. The contents of this 3 part sample kit include examples of Central Semiconductor devices most

TCD101AC

Abstract: toshiba linear image sensor DS0026CN T-41-55 toshiba linear ccd photo transistor til 32 CCD-Sensor TOSHIBA Memory SN74LS04 ccd linear toshiba
Contextual Info: TOSHIBA -CLOGIC/flENOim T? » T | ci D cl 7a4f l OOCHSll 9097248 TOSHIBA LOGIC/MEMORY CCD IMAGE SENSOR CCD (Charge Coupled Device) — — 6 7C T Ç Q 1Û 1 A C T-41-55 0 9 5 11 The TCD101AC is a high resolution and h i g h s e nsitivity 1728 element linear

Pnp transistor smd ba rn

Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
Contextual Info: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS2272 RF AND MICROWAVE TRANSISTORS AVIONICS APPLICATIONS  C • • • • • • • • 255 MHz BANDWIDTH GOLD METALLIZATION EMITTER SITE BALLASTED POUT = 350W MINIMUM

BA6805A

Abstract: kd 506 transistor VU peak hold square root amplifier BA6800A AC Voltage comparator circuit diagram audio peak level meter Transistor AC 188 VU meter transistor Transistor AC 141
Contextual Info: BA6800A BA6800AF BA6805A Fluorescent display tube level meter driver, 16-point x 2 channel, VU scale, bar display The BA6800A, BA6800AF, and BA6805A monolithic ICs are two-channel, 16-point, bar-type fluorescent level meter drivers. The grid output and duty cycle are 1/8.

Contextual Info: MAX16813 Evaluation Kit General Description The MAX16813 evaluation kit EV kit demonstrates the MAX16813 high-brightness LED (HB LED) driver, integrating a step-up DC-DC preregulator followed by 4 channels of linear current sinks. The step-up preregulator

Contextual Info: MAX16813 Evaluation Kit General Description The MAX16813 evaluation kit EV kit demonstrates the MAX16813 high-brightness LED (HB LED) driver, integrating a step-up DC-DC preregulator followed by 4 channels of linear current sinks. The step-up preregulator

IC 7481 pin configuration

Contextual Info: MITSUBISHI MICROCOMPUTERS 7480/7481 GROUP .•;• « •:*. ••:•; ^ H P '* * 'i.' * « > * SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER DESCRIPTION PIN CONFIGURATION The 7480/7481 group is the single-chip microcomputer adopting the silicon gate CMOS process. In addition to its simple instruction

stc5dnf30v

Abstract: JESD97
Contextual Info: STC5DNF30V Dual N-channel 30V - 0.032Ω - 4.5A - TSSOP8 2.7V-Driver STripFET Power MOSFET General features Type VDSS RDS on ID STC5DNF30V 30V < 0.035Ω (@4.5V) < 0.040Ω (@2.7V) 4.5A • Standard outline for easy automated surface mount assembly ■