TRANSISTOR C 608 Search Results

10B10T

Contextual Info: KSC2330A NPN EPITAXIAL SILICON TRANSISTOR COLOR TV CHROMA OUTPUT T O -92 L • Col lector-Base Voltage V Cb o = 4 0 0 V • C urrent G ain-Bandw idth Product fj= 5 0 M h z TYP ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Sym bol Col lector-Base Voltage

TO-220AB transistor package

Abstract: C-150 IRGB8B60K IRGS8B60K IRGSL8B60K
Contextual Info: PD - 94545B IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. VCES = 600V IC = 8.0A, TC=100°C

NE42484C

Abstract: transistor NEC D 586 NEC Ga FET marking L NE42484C-T1 28609 low noise FET NEC U ne42484 nec gaas fet marking NEC 2533 NEC Ga FET
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE42484C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit : mm The NE42484C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent

d768 transistor

Abstract: 3-pin D128 transistor transistor D128 transistor D586 D1515 ne32584c application note transistor d436 d388 transistor D832 transistor transistor D442
Contextual Info: DATA DATA SHEET SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the PACKAGE DIMENSIONS Unit: mm hetero junction to create high mobility electrons. Its excellent

Contextual Info: S T S 2306 S amHop Microelectronics C orp. S E P , 14 2004 V 1.1 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m Ω ) Max R ugged and reliable.

NE32584C-T1

Abstract: nec 3435 transistor am 4428
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm T h e N E 3 25 84C is a H etero Jun ction F ET th a t utilizes the hetero ju n ctio n to crea te high m obility e lectron s.

2SD1563A

Abstract: 2SB1086A
Contextual Info: ROHM CO LTD 40E D T f l a a w o o o s ^ o b /Transistors S • « * 0 1 5 S ^ r h u 2SD1563A — 2 s — — — T - S 1 - Ô 7 i f c f * * N P N y U b7>y'Z$ tëfêlï&WtJtË'tSfii/Low Freq. Power Amp. Epitaxial Planar NPN Silicon Transistor 3 A • W f i \ H il3 / D im e n s io n s Unit : mm

Optocoupler SFH 608

Contextual Info: SFH 608 SIEMENS FEATURES * Very High CTR at IF=1 mA, VCE=0.5 V - SFH608-2, 63-125% - SFH608-3,100-200% - SFH608-4,160-320% - SFH608-5, 250-500% • Specified Minimum CTR at lF=0.5 mA, VCE=1.5 V: > 32% typ. 120% Good CTR Linearity with Forward Current Low CTR Degradation

til 112 optocoupler

Abstract: f5 smd transistor smd transistor F5 smd transistor 608
Contextual Info: SIEMENS SFH 608 PHOTOTRANSISTOR, 5.3 KV, TRIOS LOW CURRENT OPTOCOUPLER FEATURES • Very High CTR at lF=1 mA, VCE=0.S V -SFH60B-2,63-125% -S F H «» W . 100-200% -S F H 608-4,160-320% - SFH6M -S, 280-500% • SpecttledMinimum CTO at lF=0.5 mA, VCE=1.S V: ¿32 % (typ. 120%

Snubber circuit Design

Abstract: MG15G6EL1 MG20G6EL1 MG25N6EK1 160U2G43 equivalent MG300G1UL1 IGBT snubber for inductive load calculation of IGBT snubber MG400G1UL1 what is fast IGBT transistor
Contextual Info: 1. Ratings of GTR module collector currents, voltage between terminals, power dissipation, junction temperature, storage temperature etc. o f transistors. These charac­ teristics are closely related each other and cannot be considered independently are further, very

IR LED and photodiode PAIR DETECTOR

Abstract: HBCS-1100 T 427 transistor IR LED and photodiode pair HBCS1100 kodak 6080 Thermalloy 6177 To5 transistor header
Contextual Info: H High Resolution Optical Reflective Sensor Technical Data HBCS-1100 Features • Focused Emitter and Detector in a Single Package • High Resolution–0.190 mm Spot Size • 700 nm Visible Emitter • Lens Filtered to Reject Ambient Light • TO-5 Miniature Sealed

7547

Abstract: M37547G2FP M37547G2-XXXFP M37547G4FP M37547G4-XXXFP
Contextual Info: 7546/7547 Group Standard Characteristics , Standard Characteristics Example Standard characteristics described below are just examples of the 7546/7547 Group's characteristics and are not guaranteed.

2n3055 motorola

Abstract: tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046
Contextual Info: Index and Cross Reference 1 Selector Guide 2 Data Sheets 3 Surface Mount Package Information and Tape and Reel Specifications 4 Outline Dimensions and Leadform Options 5 Applications Information 6 Thermal Clad is a trademark of the Bergquist Company. Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad,

Gex DIODE

Abstract: diode gex QM20T
Contextual Info: MITSUBISHI TRANSISTOR MODULES QM20TD-9B MEDIUM POWER SWITCHING USE INSULATED TYPE QM20TD-9B • • • • • Ic Collector current. 20A V gex Collector-emitter voltage. 500V Me DC current gain. 250

ST DARLINGTON TRANSISTOR

Abstract: ULN2003 hfe 1976 Darlington pair IC single
Contextual Info: SN75468, SN75469 DARLINGTON TRANSISTOR ARRAYS SLRS023B - DECEMBER 1976 - REVISED SEPTEMBER 1995 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS • 500-mA Rated Collector Current Single Output d or n package (TOP VIEW) • High-Voltage Outputs . . . 100 V

d2625

Abstract: TRANSISTOR D2625 75469 75466 75468 SLRS023A-D2625 75467 sn75466
Contextual Info: SN75466 THRU SN75469 DARLINGTON TRANSISTOR ARRAYS SLRS023A- P2625, DECEMBER 1976 - REVISED APRIL 1993 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS • 500-mA Rated Collector Current Single Output • High-Voltage Outputs. . . 100 V • Output Clamp Diodes

HVR-1X 7 diode

Abstract: STR80145 SE135N hvr 1X 3 diode semiconductor STR 20005 sk a 3120c SE110N ux-c2b equivalent transistor CS 9012 PNP STR83159
Contextual Info: Bulletin No O01EC0 JAN.,1998 SEMICONDUCTORS SHORT FORM CATALOG Power ICs Power Transistors PowerMOSFETs Tryristors Diodes Light Emitting Diodes CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility

Ps720c

Abstract: PS9303 PS256D1 PS9305 wy 636 transistor PS2381 PS9306 IGBT ac switch in SSR PS9317 PART NUMBERING SYSTEM FOR RENESAS IC
Contextual Info: O P T O C O U P L E R S + S O L I D S TAT E R E L AY S 2011 www.cel.com California Eastern Laboratories is the exclusive sales and marketing partner for the products made by the Compound Semiconductor Devices Business Division of Renesas Electronics Corporation CSDBD . These

darlington pair transistor

Abstract: SN75469 EQUIVALENT DARLINGTON ARRAYS npn darlington array Darlington pair IC schematic 1N3064 SN75468 SN75469 ULN2003A ULN2004A
Contextual Info: SN75468, SN75469 DARLINGTON TRANSISTOR ARRAYS SLRS023B – DECEMBER 1976 – REVISED SEPTEMBER 1995 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS • D OR N PACKAGE TOP VIEW 500-mA Rated Collector Current (Single Output) High-Voltage Outputs . . . 100 V

transistor r 606 j

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ204AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended tor use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor

2N6084

Abstract: 2N6080 2n6os transistor 36o a 2M6081 tt 93 n 08 358 transistor transistor n6
Contextual Info: II j - t m IW iiC tT JS & rrtM « V l l W W ^ i l f l 140 Commerce Drive Montgomeryvìlle, PA 18936-1013 Tel: 215 631-9840 . 2 N6 080 2 N6084 RF & MICROWAVE TRANSISTORS 130. 230MHz FM MOBILE APPLICATIONS FREGLENCY 175MHz VOLTAGE 12,5V : POWER OUT 4 40W

transistor Bf 444

Abstract: LB 1639 651 lem amp 827 578 3 pin DATASHEET OF BJT 547 transistor bf 422 NPN NE856 S21E UPA801T UPA801T-T1
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz • HIGH COLLECTOR CURRENT: 100mA

ka 40w trio

Abstract: TRIO TA 80W stk 490 110
Contextual Info: Ordering number : EN 5247 Thick Film Hybrid 1C STK400-490 AF Power Amplifier Split Power Supply (25W + 50W + 25W min, THD = 0.4%) Overview Package Dimensions T he S T K 400-490 is an audio pow er am plifier IC for m ulti­ channel speaker applications. It com prises two 25W chan­

BUK443

Abstract: BUK443-60A BUK443-60B TRANSISTOR C 557 B
Contextual Info: PHILIPS INTERNATIONAL bSE ]> 711002b OObB^l Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies