TRANSISTOR C 608 Search Results

transistor NEC D 822 P

Abstract: transistor number D 2498 702 mini transistor 2SC4226-T1 NEC D 822 P 2sc4226 2SC4226-T2
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD D E S C R IP T IO N The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PA C K A G E D IM E N S IO N S in millimeters

D 1437 transistor

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2 S C 5004 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in m illim e te rs OSC/M IX. It is suitable for a high density surface mount assembly since the

Contextual Info: . N AMER PHILIPS/DISCRETE 86D 01822 D DbE D bt.53131 DOlHObO □ 7" ~ 5 3 BLX93A A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe

Contextual Info: SAMSUNG S EM I C ON D UC T OR I NC MPS8098 14E D jT 'ib M m a 0007337 M | NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Vbitage: Vcto=60V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic

transistor vergleichsliste

Abstract: OC44 AD149 ASZ16 siemens transistor asy 27 AF124 ASZ15 GD241 transistor gc301 AC125F
Contextual Info: TRANSISTOR VERGLEICHSLISTE Teil 1: G erm anium transistoren ra d io -television T ran sistorvergleichsliste T eil 1 : G erm anium transistoren TRANSISTOR V E R G L E I C H S LI S T E T eil 1: G erin an iu u itran sisto ren M IL IT Ä R V E R L A G D E R D E U T S C H E N D E M O K R A T IS C H E N

ld18a

Abstract: transistor tc 144
Contextual Info: May 1994 P A IR C H II-D M IC D N D U C T Q R tm NDP608A / NDP608AE / NDP608B / NDP608BE NDB608A / NDB608AE / NDB608B / NDB608BE N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-channel enhancement mode power field effect transistors are produced using Fairchild's

AN-994

Abstract: C-150 HF03D060ACE
Contextual Info: PD - 95645B IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • VCES = 600V C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.

AN-994

Abstract: C-150 IRGS8B60K IRGSL8B60K Mbl transistor
Contextual Info: PD - 95645A IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free.

10B10T

Contextual Info: KSC2330A NPN EPITAXIAL SILICON TRANSISTOR COLOR TV CHROMA OUTPUT T O -92 L • Col lector-Base Voltage V Cb o = 4 0 0 V • C urrent G ain-Bandw idth Product fj= 5 0 M h z TYP ABSOLUTE MAXIMUM RATINGS (TA=25°C) C haracteristic Sym bol Col lector-Base Voltage

transistor c828

Abstract: c828 npn transistor C828 transistor free C828 c828 npn NPN transistor c828 hfe c828 npn c828 C828 transistor c828 power rating
Contextual Info: 112 O p to iso lato rs A* * W A, ~ PAC K A G E PRODUCT KEY OUTPUT FO RM AT TRAN SISTOR TRAN SISTOR TRAN SISTOR TRAN SISTOR TRAN SISTO R TRAN SISTOR TRAN SISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRAN SISTOR TRAN SISTOR

Contextual Info: PD - 94545A IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.

2SC 968 NPN Transistor

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 0 7 is an NPN e p ita x ia l silico n tra n s is to r d e s ig n e d fo r use in lo w no ise and sm a ll sig n a l a m p lifie rs from

TO-220AB transistor package

Abstract: C-150 IRGB8B60K IRGS8B60K IRGSL8B60K
Contextual Info: PD - 94545B IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. VCES = 600V IC = 8.0A, TC=100°C

C-150

Abstract: IRF1010 IRF530S IRGB8B60K IRGS8B60K IRGSL8B60K
Contextual Info: PD - 94545C IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. VCES = 600V IC = 20A, TC=100°C

NE42484C

Abstract: transistor NEC D 586 NEC Ga FET marking L NE42484C-T1 28609 low noise FET NEC U ne42484 nec gaas fet marking NEC 2533 NEC Ga FET
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE42484C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit : mm The NE42484C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent

BC648B

Contextual Info: Transistors BC847B NPN General Purpose Transistor I BC847B •Feature« •E x te rn a l dimensions Units : mm 1 > BVceo<45V (lc=1m A ) 2 ) Complements the BC857B. BC847B •P a c k a g e , marking, and packaging specifications Type BC847B Package Marking

d768 transistor

Abstract: 3-pin D128 transistor transistor D128 transistor D586 D1515 ne32584c application note transistor d436 d388 transistor D832 transistor transistor D442
Contextual Info: DATA DATA SHEET SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE32584C is a Hetero Junction FET that utilizes the PACKAGE DIMENSIONS Unit: mm hetero junction to create high mobility electrons. Its excellent

Contextual Info: S T S 2306 S amHop Microelectronics C orp. S E P , 14 2004 V 1.1 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m Ω ) Max R ugged and reliable.

9906V

Abstract: 660 tg diode s608
Contextual Info: S DS 9906 S amHop Microelectronics C orp. J UL. 30 2004 v1.1 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m Ω ) Max R ugged and reliable. 60 @ V G S = 4V

D1063

Abstract: Precision Voltage Regulators 2n4422 UA723 fairchild uA723U UA723L transistor 2n4422
Contextual Info: UA723C, UÄ723M PRECISION VOLTAGE REGULATORS D1063, A U G U S T 19 7 2 -R E V IS E D S E P T E M B E R 1991 UÄ723C . . . D O R N P A C K A G E UA723M . . . J P A C K A G E 150-mA Load Current Without External Power Transistor TOP VIEW Typically 0.02% Input Regulation and

2SD1563A

Abstract: 2SB1086A
Contextual Info: h 7 > V '^ £ / T ransistors 2SD1563A NPN y U = i> h -7 > y X ^ 1SÜ Freq. Power Amp. Epitaxial Planar NPN Silicon Transistor 2SD1563A I J S f J I I T i f c * B V c e o = 1 6 0 V o 2) A S O A i j £ < « * l - 5 i ^ ' o 3) 2SB1086A £ n > 7 'J ? & 3 0 4)

NPN Transistor 2N3055 darlington

Abstract: lambda LAS PMD 1000 stc transistors series 2N3055 4D ic 810 2N3055 series voltage regulator 2N3055 PMD12K40 2N3055-2
Contextual Info: • High power, high gain Darlington transistors • VcEO 40V, 60V, 80V, 100V PMD 10K,11K,12K,13K, 16K,17K Darlington transistors CASE T E M P E R A T U R E T c 75°C • The only glass passivated 200°C operating junction tem perature Darlington power transistor range

ic ntp- 3000

Abstract: IIH13 Scans-0088096
Contextual Info: z r— S 7 • 5^— h Com pound Transistor C E2A 3Q í&í¡fcF*3J & N P N x C E2A 3Q • i' t — ¿ Í S I i» ^ Y iP ^ M L tz , ^ H ig h 9 f- i i - n ^ M '> l □ ^ Vs? > '> * ? h F E ÎS ÎÆ R Â h 7 's ^ w 'J X 9 X % ? - r O A i K 7 i y ’m t l - C f t i l T t o

NE32584C-T1

Abstract: nec 3435 transistor am 4428
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm T h e N E 3 25 84C is a H etero Jun ction F ET th a t utilizes the hetero ju n ctio n to crea te high m obility e lectron s.