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IRGSL8B60K Datasheets (3)

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International Rectifier

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IRGSL8B60K		International Rectifier	INSULATED GATE BIPOLAR TRANSISTOR	Original	PDF	476.48KB	13
IRGSL8B60K		International Rectifier	Insulated Gate Bipolar Transistor	Original	PDF	424.67KB	13
IRGSL8B60KPBF		International Rectifier		Original	PDF	476.48KB	13

IRGSL8B60K Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: PD - 95645 IRGB8B60KPbF IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR Features C • Low VCE on Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. •TO-220 is available in PbF as a Lead-Free.	Original	o-220 irgb8b60kpbf irgs8b60k irgsl8b60k +2o-220ab o-262	PDF
TO-220AB transistor package Abstract: C-150 IRGB8B60K IRGS8B60K IRGSL8B60K Contextual Info: PD - 94545B IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. VCES = 600V IC = 8.0A, TC=100°C	Original	94545b irgb8b60k irgs8b60k irgsl8b60k +4o-220ab o-262 to-220ab transistor package c-150	PDF
C-150 Abstract: IRF1010 IRF530S IRGB8B60K IRGS8B60K IRGSL8B60K Contextual Info: PD - 94545C IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. VCES = 600V IC = 20A, TC=100°C	Original	94545c irgb8b60k irgs8b60k irgsl8b60k +6o-220ab o-262 an-994 c-150 irf1010 irf530s	PDF
AN-994 Abstract: C-150 HF03D060ACE Contextual Info: PD - 95645B IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • VCES = 600V C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	95645b irgb8b60kpbf irgs8b60kpbf irgsl8b60kpbf +5o-220ab o-262 an-994 c-150 hf03d060ace	PDF
AN-994 Abstract: C-150 IRGS8B60K IRGSL8B60K Contextual Info: PD - 95645A IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free.	Original	5645a irgb8b60kpbf irgs8b60kpbf irgsl8b60kpbf +6o-220ab irgs8b60k o-262 irgsl8b60k an-994 c-150	PDF
Contextual Info: PD - 94545C IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. VCES = 600V IC = 20A, TC=100°C	Original	94545c irgb8b60k irgs8b60k irgsl8b60k +3o-220ab o-262 an-994	PDF
C-150 Abstract: IRF1010 IRF530S IRGB8B60K IRGS8B60K IRGSL8B60K TO-220AB transistor package 11mH Contextual Info: PD - 94545C IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. VCES = 600V IC = 20A, TC=100°C	Original	94545c irgb8b60k irgs8b60k irgsl8b60k +7o-220ab o-262 c-150 irf1010 irf530s to-220ab transistor package 11mh	PDF
Contextual Info: PD - 94545 IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	irgb8b60k irgs8b60k irgsl8b60k o-220ab +2o-262 an-994	PDF
AN-994 Abstract: C-150 IRGS8B60K IRGSL8B60K Mbl transistor Contextual Info: PD - 95645A IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free.	Original	5645a irgb8b60kpbf irgs8b60kpbf irgsl8b60kpbf +7o-220ab irgs8b60k o-262 irgsl8b60k an-994 c-150 mbl transistor	PDF
Contextual Info: PD - 94545A IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.	Original	4545a irgb8b60k irgs8b60k irgsl8b60k +2o-220ab o-262	PDF
Contextual Info: PD - 95645B IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free.	Original	95645b irgb8b60kpbf irgs8b60kpbf irgsl8b60kpbf +3o-220ab o-262 an-994	PDF
C-150 Abstract: IRGS8B60K IRGSL8B60K Contextual Info: PD - 95645A IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free.	Original	5645a irgb8b60kpbf irgs8b60kpbf irgsl8b60kpbf +6o-220ab irgs8b60k o-262 irgsl8b60k irgb/s/sl8b60kpbf c-150	PDF
IRU1239SC Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter Contextual Info: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK	Original	100mt160papbf 100mt160pa 100mt160pbpbf iru1239sc +9iru1239 full-bridge ir2110 class-d ir2010 pwm ir2112 irf540 ir21065 full bridge ir2110 h-bridge irfz44n irvcm10a 600v 300a igbt dc to dc boost converter	PDF