Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR BFX 90 Search Results

    TRANSISTOR BFX 90 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA012
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Datasheet
    TPCP8514
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 Datasheet

    TRANSISTOR BFX 90 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Transistor BFX 90

    Abstract: transistor bfx 73 BFX 514 BFX89 b 514 transistor
    Contextual Info: 2SC D • û23ShQS 000474^ 4 W S I E ù NPN Silicon Transistor for RF Broadband Amplifier T ~ Z 'tï BFX 89 -SIEMENS AKTIEN GE SE LL SC HA F BFX 89 is an epitaxial NPN silicon RF transistor in TO 72 case (18 A 4 DIN 41876 . The leads are electrically insulated from the case. This transistor is suitable for general


    OCR Scan
    23ShQS Q62702-F296 Transistor BFX 90 transistor bfx 73 BFX 514 BFX89 b 514 transistor PDF

    BFX59

    Abstract: transistor BFX59 transistor BC 336 kbr 1000 Transistor BFX 59
    Contextual Info: BFX59 NPN Transistor for low-power driver and output stages in antenna amplifiers BFX 59 is an epitaxial NPN silicon planar RF transistor in a case 18 A 4 DIN 41 876 TO-72 . The leads are electrically insulated from the case. BFX 59 is suitable for use in low -pow er amplifier, driver and power stages at frequencies up to the UHF range.


    OCR Scan
    BFX59 Q60206-X59 BFX59 transistor BFX59 transistor BC 336 kbr 1000 Transistor BFX 59 PDF

    Transistor BFX 59

    Abstract: BFX59F BFX59 kbr 1000 Q60206-X transistor BFX59 transistor w 04 59 Transistor BFX 4
    Contextual Info: BFX 59 F NPN Transistor for driver and output stages in antenna amplifiers BFX 59 F is an epitaxial N P N silicon planar RF transistor in a case 18 A 4 D IN 41 876 TO-72 . The leads are electrically insulated from the case. B FX 59 F is suitable for use in low-power driver and output stages up to the U H F range, especially at a higher


    OCR Scan
    Q60206-X Transistor BFX 59 BFX59F BFX59 kbr 1000 transistor BFX59 transistor w 04 59 Transistor BFX 4 PDF

    BFX60

    Abstract: p21e Q60206-X 510Z5 bfx 63 transistor for RF amplifier
    Contextual Info: BFX60 NPN Transistor for RF amplifier stages BFX 60 is an epitaxial NPN silicon planar RF transistor in a case 18 A 4 DIN 41876 T O -7 2 , with different lead arrangement however. The leads are electrically insulated from the case. The transistor is particularly suitable for common-emitter RF amplifier


    OCR Scan
    BFX60 BFX60 Q60206-X p21e 510Z5 bfx 63 transistor for RF amplifier PDF

    BFX48

    Contextual Info: BFX48 SILICON PLANAR PNP H IGH-FREQUENCY AMPLIFIER The BFX 48 is a silicon planar epitaxial PNP transistor in Jedec T O -1 8 metal case. It is suitable fo r a wide range o f applications including lo w noise, low current high gain RF and wide band pulse am plifiers.


    OCR Scan
    BFX48 BFX48 PDF

    3004x

    Abstract: SIEMENS B 58 451 GE 639 transistor 2114D transistor bfx 73 STATIC RAM 2114 Q2114 tic 2116 M
    Contextual Info: ESC D fl23SbOS 0G04737 fl ¡SIEG r - j/ 'Z 3 B FX 55 NPN Silicon Transistor for VHF Output Stages in Broadband Amplifiers SIEMENS A K T IE NÖES EL LS CH AF BFX 55 is an epitaxial NPN silicon planar transistor in a TO 39 case 5 C 3 DIN 41873 . The collector has been electrically connected to the case. The transistor is especially suitable for


    OCR Scan
    fl23SbOS 0G04737 Q60206-X55 BFX55 23SbOS 150mA 3004x SIEMENS B 58 451 GE 639 transistor 2114D transistor bfx 73 STATIC RAM 2114 Q2114 tic 2116 M PDF

    2N5109 motorola

    Abstract: BFY90 MOTOROLA 2N5583 MRF965 bfr91 motorola MRF586 MOTOROLA 2N5179 2n4427 MOTOROLA macro-X ceramic 2N3866A
    Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­


    OCR Scan
    17A-01 05A-01 MRF587 44A-01 2N3959 2N3960 2N5835 MM4049* MRF914 2N5943 2N5109 motorola BFY90 MOTOROLA 2N5583 MRF965 bfr91 motorola MRF586 MOTOROLA 2N5179 2n4427 MOTOROLA macro-X ceramic 2N3866A PDF

    BLY93A

    Abstract: BLY78 BLY34 BLY97A BLY-38 BLW11 BLY91 BLW25 BLW19 bly 63
    Contextual Info: BLW23 SILICON NPN VH F POWER TRANSISTOR • • • 5 W at 175 MHz, 28 V Minimum Gain 13 dB Designed to Withstand Infinite VSWR at Rated Output mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e . 55 V


    OCR Scan
    BLW23 8/32-UNC-2A-Thread O-117 O-117 T0-60CE S0-104 SO-104 BLY93A BLY78 BLY34 BLY97A BLY-38 BLW11 BLY91 BLW25 BLW19 bly 63 PDF

    BLW24

    Abstract: BLY38 BLY88 bly91 BLY-38 BLX66 bly power transistor TRANSISTOR BFW 16 BLY36 Transistor BFw 92
    Contextual Info: BLW24 SILICON NPN VHF POWER TRANSISTOR HIGH POWER OUTPUT STAGE FOR FM/AM APPLICATIONS • • • • 17 W@ 175 MHz 8 dB Gain Distributed Construction I nerdigital Construction mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e . 60 V


    OCR Scan
    BLW24 O-1175 O-117 T0-60CE S0-104 SO-104 BLW24 BLY38 BLY88 bly91 BLY-38 BLX66 bly power transistor TRANSISTOR BFW 16 BLY36 Transistor BFw 92 PDF

    BLY93

    Abstract: bly89 BLY78 bly91 BLX65 bly93a BFY 94 transistor bly 78 BLW11 BLY88
    Contextual Info: BLW14 SILICON NPN VHF POWER TRANSISTOR 873 H IG H G A IN O U TP U T FOR 13 V FM A P P L IC A TIO N S • 7 W a t 470 M H z • Stripline Package • Distributed Construction mechanical data TO-129 absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e .36 V


    OCR Scan
    BLW14 O-129 O-117 T0-60CE S0-104 SO-104 BLY93 bly89 BLY78 bly91 BLX65 bly93a BFY 94 transistor bly 78 BLW11 BLY88 PDF

    BLY78

    Abstract: BLY87 bly91 BLY93A TRANSISTOR BFW 11 Transistor BFX 90 BLY34 BLW12 BLY91A BLY53
    Contextual Info: BLW12 SILICO N NPN VH F POWER TRANSISTOR HIGH G AIN DRIVER FOR 13 V FM APPLICATIONS • • • • 750 mW at 470 MHz Min, Gain 10 dB Studless Stripline Package Distributed Construction mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e . 36 V


    OCR Scan
    BLW12 O-117 T0-60CE S0-104 SO-104 BLY78 BLY87 bly91 BLY93A TRANSISTOR BFW 11 Transistor BFX 90 BLY34 BLW12 BLY91A BLY53 PDF

    AC125K

    Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
    Contextual Info: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T


    OCR Scan
    76665N 76889N MA748PC MA709PC jA710PC A711PC iA712PC A723PC HA741PC A747PC AC125K 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram PDF

    BUY69

    Abstract: bu137 transistor t03 BU108 BC326 BU500 bu137a F011 transistor bcy79 equivalent 2s026
    Contextual Info: Metal Can Power H igh V o lta g e 200-1500 V o lts Vce Case Outlines «- *4* •* + r] •U i -0 - 2 3 - “ 6-6-4- — 38 05 min - D im ensions in mm TO-5 9 1 Constn. V C B O V Outline IC Pk A IC d.c. A PTO T 200 6 250 300 400 6 4 4 4 4 50 50 50 50 10 100


    OCR Scan
    0-400I BD253 BD253A BD253B BFX84 BFX85 BFX86 BCY78 BCY79 BCY58 BUY69 bu137 transistor t03 BU108 BC326 BU500 bu137a F011 transistor bcy79 equivalent 2s026 PDF

    MA3232

    Abstract: BF123 CA3036 FT4017 2n1613 replacement A431 BF121 BVEBO-15V DIODE SJ 98 DM01B
    Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,


    OCR Scan
    BVCBO-100V BVCE0-80V BVEBO-15V BVCBO-60V BVCEO-40V BVCB0-80V BVCE0-60V BVCB0-100V MA3232 BF123 CA3036 FT4017 2n1613 replacement A431 BF121 DIODE SJ 98 DM01B PDF

    Contextual Info: HD66720 Panel Controller/Driver for Dot-Matrix Liquid Crystal Display with Key-Matrix HITACHI Description The HD66720 dot-matrix liquid crystal display controller (LCD) and driver LSI incorporates a key-scan function and an LED display function, and displays alphanumeric character and symbols. A single


    OCR Scan
    HD66720 HD66720 10-character PDF

    AMIBIOS HIFLEX SETUP UTILITY VERSION 1.16

    Abstract: AMIBIOS HIFLEX SETUP UTILITY VERSION 1.3 AMERICAN MEGATRENDS amibios c 2001 american megatrends inc scalex 800 53c810 amibios version 1.19 NCR53C810 midi to usb conector transistor ITT 435-1 1024k x 8 bits fifo Video Frame
    Contextual Info: TECHNICAL USER'S MANUAL FOR: SLOTCARD PC/104 plus PCC-P5 Nordstrasse 11/F CH- 4542 Luterbach Tel.: +41 0 32 681 58 00 Fax: +41 (0)32 681 58 01 Email: support@digitallogic.com Homepage: http://www.digitallogic.com DIGITAL-LOGIC AG PCCP5 Manual V2.3 COPYRIGHT  1995- 2001 BY DIGITAL-LOGIC AG


    Original
    PC/104 AMIBIOS HIFLEX SETUP UTILITY VERSION 1.16 AMIBIOS HIFLEX SETUP UTILITY VERSION 1.3 AMERICAN MEGATRENDS amibios c 2001 american megatrends inc scalex 800 53c810 amibios version 1.19 NCR53C810 midi to usb conector transistor ITT 435-1 1024k x 8 bits fifo Video Frame PDF