TRANSISTOR BF 264 Search Results

transistor bf 422

Abstract: BF 264 PNP transistor 263 BF 422
Contextual Info: Silizium-PNP-Epitaxial-Planar-HF-Transistor Silicon PNP Epitaxial Planar RF Transistor Anwendungen: Video-B-Endstufen in Fernsehem pfängern Applications: Video El-class p o w e r stages in TV-receivers Besondere Merkmale: Features: • Kom plem entär zu BF 422

BC264

Abstract: transistor a effet de champ b c 264 transistor bc264 F-139 equivalent transistor BC 55 TRANSISTOR effet de champ BC 264 CB-76 50 transistor BC 1 BF 212 transistor
Contextual Info: BC 264 FIELD EFFECT TRANSISTOR, SILICON, N CHANNEL TRANSISTOR A EF FE T OE CHAMP, SILICIUM, CANAL N - LF amplification Amplification BF V DS 30 V max. ' dss 2 . . . . 12 mA à V GS = 0 in 4 groups en 4 groupes F 2 dB max à V q § = 0 f » 1 kHz Plastic case F 139 B — See outline drawing CB-76 on last pages

K 2645 transistor

Abstract: K 2642 transistor transistor d 2645 TRANSISTOR K 2645 transistor TRANSISTOR BC 415 transistor BU 102 TRANSISTOR P 01 K 2645 transistor BF 606 BF 145 transistor TRANSISTOR K 2645
Contextual Info: L I - -• TELEFUNKEN ELECTRONIC 17E D ■ fiSSOQ^b 0001503 5 ■ AL6G BU 903 milFiyiMKlM electronic CrttMtTtchnoiog* r - 33-13 Silicon NPN Power Transistor Application: Switching mode power supply features: • Short switching time • Power dissipation 125 W

3866S

Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

Contextual Info: AC-DC 250 Watts CCB250 Series xppower.com • 250 W Convection Cooled • 300 W Peak Rating for 500 ms • Very High Efficiency up to 95% • 5 V Standby Rail and Inhibit Function • 80 275 VAC Operation • IT & Medical BF Safety Approvals • 3 Year Warranty

BFG425W

Abstract: amplifier 2606 BFG425 BFG21W STR 6507 texas rf power transistor transistor bf 203 PHILIPS TRANSISTORS
Contextual Info: APPLICATION INFORMATION 2.4 GHz power amplifier with the BFG425W and the BFG21W Philips Semiconductors Application information 2.4 GHz power amplifier with the BFG425W and the BFG21W ABSTRACT • Description of the product The BFG425W is a double polysilicon wideband transistor and the BFG21W is a double polysilicon bipolar power

AC125K

Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Contextual Info: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T

Contextual Info: AC-DC 250/350 Watts EMH Series xppower.com • Industry Standard 3” x 5” x 1.43” Format • IT & Medical BF Approvals • 80 V - 275 VAC Operation • Optional ORing Diode (EMH350D Models) • Analog & PMBus Signals Options (EMH350) • 5 V Standby (EMH350)

RC39

Abstract: AN-S011 diode marking c2 sma DIODE UF marking code l0407 5volt amplifier circuit diagram DATASHEET OF IC 723 Marking Symbol KF MMIC code D part marking ab sc-70
Contextual Info: Agilent MSA-2643 Cascadable Silicon Bipolar Gain Block MMIC Amplifier Data Sheet Applications • Cellular/PCS/WLL basestations • Wireless data/ WLAN • Fiber-optic systems • ISM Description Agilent Technologies’ MSA-2643 is a low current silicon gain block

EMH350PSXX

Abstract: EMH350 SPHD-001T-P05 PHDR-12VS EMH350PSXX-01 EMH250PSXX
Contextual Info: AC DC 250/350 Watts EMH Series xppower.com • Industry Standard 3” x 5” x 1.43” Format • IT & Medical BF Approvals • 80 V • Optional ORing Diode (EMH350D Models) • Analog & PMBus Signals Options (EMH350) • 5 V Standby (EMH350) • 3 Year Warranty

Contextual Info: COS/MOS 40C&B IN T EG R A T ED CIRCUIT 4 -B IT • • • • • • • M A G N IT U D E hce/hòf « h b COM PARATOR Q UIESCENT C U R R E N T SPECIFIED TO 20V FOR HCC DEVICE S T A N D A R D B-SERIES O UTPUT D R IV E EXPANSIO N TO 8 -1 6 V .4N BITS BY C ASCADING U NITS

TRANSISTOR TT 2158

Abstract: KF102 l 0313 217 diode AN-S011 bjt4npn MSA-2643 AN-S012 rf amplifier marking catalog rfics marking 76
Contextual Info: Agilent MSA-2643 Cascadable Silicon Bipolar Gain Block MMIC Amplifier Data Sheet Applications • Cellular/PCS/WLL basestations • Wireless data/ WLAN • Fiber-optic systems • ISM Description Agilent Technologies’ MSA-2643 is a low current silicon gain block

transistor jst 26

Abstract: transistor jst 02
Contextual Info: AC DC 250/350 Watts EMH Series xppower.com • Single & Dual Output Models • IT & Medical BF Approvals • 80 V • Optional ORing Diode (EMH350D Models) • Analog & PMBus Signals Options (EMH350) • 5 V Standby (EMH350) • 3 Year Warranty 275 VAC Operation

LB 1639

Abstract: transistor Bf 444 transistor 4341 transistor BF 258 transistor BF 236
Contextual Info: SILICON TRANSISTOR UPA801T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1 LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz

KT 819 transistor

Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Contextual Info: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e

TO92A

Contextual Info: ÛB MICRO ELECTRONICS CORP T - t- J ' ^ 7 DE I kCHlTflü 0DDÜb7M 0 . Multiple Transistors V C E SA T Ul 11. NO. M A X IM U M R A T IN G S X TYPE P O L A R IT Y DU AL TR AN SIST O R S Au H FE C ASE Pd (mW) 'c VCE0 (mA) (V) min max V CE 'c (mA) (V) Av BE

LB 1639

Abstract: UPA801T BF 830 transistor UPA801T-T1-A NE856 S21E UPA801T-T1 OF BJT 547 transistor BF 507 651 lem
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA801T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz • HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz • HIGH COLLECTOR CURRENT: 100mA

4 digit 7 segment display 5461 AB

Abstract: 5461 AB 7 segment display 4 digit bf 771 transistor BF 502 32X5 NJU6469 NJU6469XFC1 NJU6469XFG1 SEG22 6AR6
Contextual Info: m -JÊF A NJ U 6 4 6 9 P R E L I M I NARY 12-CHARACTER 2 - L I N E DOT M A T R I X • ■ L CD CONTROLLER GENERAL DESCRIPTION The NJU6469 is a Dot Matrix LCD control Ier driver for 12-character 2-1ine with icon display in single chip. It contains voltage tripier, bleeder resistance, CR

switch-mode transformer

Abstract: FETs Field Effect Transistors IEC60601 microcontroller medical APPLICATION IEC60601-1 IEC60950-1 ISO14971 ite power supplies
Contextual Info: What to look for in a medical power supply Changing safety and environmental standards are added to an already long list of factors. M odern switch-mode power supplies are used in a wide range of devices that include MRI, Xray, CT and PET scanners, blood analyzers, patient monitors, and robotic surgical

transistor equivalent book FOR D 1047

Abstract: MDA770 PBR951,215 Mouser 1998 Transistor B 1566 MCC 90-16
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBR951 UHF wideband transistor Product specification Supersedes data of 1998 Jun 09 File under Discrete Semiconductors, SC14 1998 Aug 10 Philips Semiconductors Product specification UHF wideband transistor

IEC 62 code

Abstract: PBR941
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PBR941 UHF wideband transistor Product specification Supersedes data of 1998 May 08 File under Discrete Semiconductors, SC14 1998 Aug 10 Philips Semiconductors Product specification UHF wideband transistor

transistor BF 697

Abstract: transistor kf 469 transistor BI 342 905 682 SOT23 MARKING K 2645 transistor 038N BJT BF 331 KF 569 transistor "micro-x" "marking" 102 AF 1507
Contextual Info: SILICON TRANSISTOR NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz E • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz B • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE

LM 1605 CK

Abstract: RS 2024 aci 30-1a 4 digit 7 segment display 5461 AB DJRQ pt 4115 transistor BF 502 UV 471 32X5 KJU6469XFC1
Contextual Info: N J U6 4 6 9 P R E L I M I NARY 12-CHARACTER DOT 2 -L IN E M A T R IX LCD CONTROLLER GENERAL DESCRIPTION The MJUB469 is a Dot Matrix LCD control Ier driver for 1 2 -character 2 — Iine with icon display in single chip. It contains voltage tripler, bleeder resistance, CR

HIR26-21C

Abstract: w32 smd transistor w32 smd transistor 143 17-21SYGC/S530-E2/TR8 3A-01-B74-Y9C-A1S1T1DH-AM ELM-1882-UYWB 19-223SURSYGC/S530-A3/E3/TR8 l289 itr8102 w27 smd transistor
Contextual Info: Everlight Electronics was established in 1983 and plays a critical role in the history of Taiwan’s LED industry. It has become the leader in the Taiwan LED packaging industry. Although facing competition from numerous worldwide Optoelectronic suppliers, Everlight