300U Search Results

DIODE 300U 120 C

Contextual Info: 300U R Series Vishay High Power Products Standard Recovery Diodes (Stud Version), 300 A FEATURES • Alloy diode RoHS • Popular series for rough service COMPLIANT • Stud cathode and stud anode version • RoHS compliant • Designed and qualified for industrial level

208H

Abstract: 300uH
Contextual Info: 1. Mechanical Dimensions: 2. S c h e m a t i c : -0 2 1 o- B 4 0 - 1 19.00 1-0 3 Max £ D 2 .5 0 ± 0 .5 0 3. Electrical Specifications: OCL: 4.3m H Min @1 OKHz 1.0V, Each Wdg Leakage L: 300uH Max @100KHz 0.1V, S hort 4 - 3 DCR: 0 .5 0 0 Ohms Max, Each Wdg

DIODE 300U 120 C

Abstract: diode 300U 300U B-26 DO-205AB 8-24UNF-2A
Contextual Info: Bulletin I2039 rev. C 03/03 300U R SERIES STANDARD RECOVERY DIODES Stud Version Features Alloy diode Popular series for rough service 300A Stud cathode and stud anode version Typical Applications Welders Power supplies Motor controls Battery chargers General industrial current rectification

Contextual Info: 300U R Series www.vishay.com Vishay Semiconductors Standard Recovery Diodes (Stud Version), 300 A FEATURES • Alloy diode • Popular series for rough service RoHS • Stud cathode and stud anode version COMPLIANT • Designed and qualified for industrial level

Contextual Info: MMBT2222AW 3 1 2 SOT-323 SC-70 VCEO Value 150 833 TJ ,Tstg -55 to+150 MMBT2222AW=P1 (1) u 1. Pulse Test: Pulse Width WEITRON http://www.weitron.com.tw 300us, Duty Cycle 2.0% MMBT2222AW ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)

TGF4350-EPU

Contextual Info: TriQuint <+ Advance Product Information . SEMICONDUCTOR 300um Discrete pHEMT TGF4350-EPU Key Features and Performance 0.25um pHEMT Technology DC 22 GHz Frequency Range 1.2 dB NF, 14.5 dB Associated Gain at 10 GHz, 3V Operation Floating Source Configuration

crystal 12mhz

Abstract: smd transistor ab1 Specification Quartz Crystals 12Mhz 12mhz crystal crystal quartz 16 MHz
Contextual Info: Quartz Crystal CSX3 Model 3.2X5 mm Ultra Miniature SMD Crystal Packaging: 12MHz to 45MHz ±10ppm to ±50ppm ±10ppm to ±100ppm ee Fr ad HS t -10°C to 70°C e L Ro plian -30°C to 85°C m Co 5.0pF Max 20uW Typical, 300uW Max ±3ppm Max 1st/yr see table 1

Contextual Info: NJM324C Low power quad operational amplifiers Features • Wide gain bandwidth:1.3MHz typ. • Input common-mode voltage range includes ground • Large voltage gain:100dB typ. • Very low supply current per amplifier:300uA typ. • Low input bias current: 20nA typ.

TGF4350-EPU

Contextual Info: Advance Product Information May 15, 2001 300um Discrete pHEMT TGF4350-EPU Key Features and Performance • • • 0.25um pHEMT Technology DC 22 GHz Frequency Range 1.2 dB NF, 14.5 dB Associated Gain at 10 GHz, 3V Operation Floating Source Configuration Chip Dimensions 0.620 mm x

Contextual Info: Bulletin 12031/B International I I]Rectifier 70/300U R .D SERIES STANDARD RECOVERY DIODES Stud Version Features D iffu sed d io d e W id e c u rre n t ra n g e High v o lta g e ra tin g s up to 1 6 0 0 V H igh s u rg e c u rre n t c a p a b ilitie s S tu d c a th o d e and stud a n o d e ve rs io n

Contextual Info: Advance Product Information SEMICONDUCTOR, 300um Discrete pHEMT TGF4350-EPU Key Features and Performance 0.25um pHEMT Technology DC 22 GHz Frequency Range 1.2 dB NF, 14.5 dB Associated Gain at 10 GHz, 3V Operation Floating Source Configuration Chip Dimensions 0.457 mm x

Contextual Info: LT1013MJGB SMD Linear ICs Dual General Purpose Op Amp statusû Military/High-RelY Input Bias Current Max. (A)30n Unity Gain BW (Hz) V(io) Max. (V)300u I(io) Max. (A)2.5n Com Mode Inp Range (VICR)13ñ Input Resistance Typ. (Ohms)400MÂ Temp Coef. of VIO2.0u

Contextual Info: LT1013AIP Linear ICs Dual General Purpose Op Amp status Military/High-RelN Input Bias Current Max. A 25n Unity Gain BW (Hz) V(io) Max. (V)300u I(io) Max. (A)1.5n Com Mode Inp Range (VICR)13ñ Input Resistance Typ. (Ohms)400MÂ Temp Coef. of VIO2.0u P(D) Max. (W)

Contextual Info: OP297FZ Linear ICs Dual General Purpose Op Amp status Military/High-RelN Input Bias Current Max. A 750p Unity Gain BW (Hz)500k V(io) Max. (V)300u I(io) Max. (A)750p Com Mode Inp Range (VICR)14ñ Input Resistance Typ. (Ohms)30M Temp Coef. of VIO2.0u P(D) Max. (W)

Contextual Info: 300UR30A Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current300 @Temp (øC) (Test Condition)130# V(RRM)(V) Rep.Pk.Rev. Voltage300 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.5.7k¥ V(FM) Max.(V) Forward Voltage1.4 @I(FM) (A) (Test Condition)942 @Temp. (øC) (Test Condition)25õ

Contextual Info: VN0106N9 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)500m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)2.0 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC)-55

Contextual Info: TN0624N3 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)240 V(BR)GSS (V)20 I(D) Max. (A)400m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)2.0 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)1.0 Minimum Operating Temp (øC)-55

Contextual Info: 300U120AMA Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current300 @Temp (øC) (Test Condition)130# V(RRM)(V) Rep.Pk.Rev. Voltage1.2k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.5.7k¥ V(FM) Max.(V) Forward Voltage1.4 @I(FM) (A) (Test Condition)942 @Temp. (øC) (Test Condition)25õ

Contextual Info: 300UR120A Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current300 @Temp (øC) (Test Condition)130# V(RRM)(V) Rep.Pk.Rev. Voltage1.2k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.5.7k¥ V(FM) Max.(V) Forward Voltage1.4 @I(FM) (A) (Test Condition)942 @Temp. (øC) (Test Condition)25õ

Contextual Info: 2SK545-12 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)40 V(BR)GSS (V) I(D) Max. (A)1.0m I(G) Max. (A) Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC)125õ I(GSS) Max. (A)500p @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)300u

Contextual Info: SK3098 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage82 @I(Z) (A) (Test Condition)300u Tolerance (%)10 P(D) Max. (W)1.0 Z(z) Max. (ê) Dyn. Imped.200Â Temp Coef pp/10k Maximum Operating Temp (øC) Package StyleDO-27

Contextual Info: 300UR80AM Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current300 @Temp (øC) (Test Condition)130# V(RRM)(V) Rep.Pk.Rev. Voltage800 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.5.7k¥ V(FM) Max.(V) Forward Voltage1.4 @I(FM) (A) (Test Condition)942 @Temp. (øC) (Test Condition)25õ

Contextual Info: TLE2022BML Linear ICs Dual General Purpose Op Amp status Military/High-RelN Input Bias Current Max. A 50n Unity Gain BW (Hz)2.8M V(io) Max. (V)300u I(io) Max. (A)3.0n Com Mode Inp Range (VICR)13.2ñ Input Resistance Typ. (Ohms) Temp Coef. of VIO2.0u P(D) Max. (W)650m

Contextual Info: OP271FZ Linear ICs Dual General Purpose Op Amp status Military/High-RelN Input Bias Current Max. A 40n Unity Gain BW (Hz)5.0MÂ V(io) Max. (V)300u I(io) Max. (A)15n Com Mode Inp Range (VICR)12.5ñ Input Resistance Typ. (Ohms)0.4M Temp Coef. of VIO1u P(D) Max. (W)500m