TRANSISTOR BD135 Search Results

KIA78*pI

Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC

tip122 tip127 audio board

Abstract: BUK 450-1000 Transistor Selection Guide tip122 tip127 audio amp FJL6920 equivalent car amp TIP41/TIP42 kse13009 TRANSISTOR TIP31 FJL6920
Contextual Info: Bipolar Power Transistor Selection Guide Bipolar Power Transistor Selection Guide Analog Discrete Interface & Logic Optoelectronics January 2003 Across the board. Around the world. Bipolar Power Transistor Selection Guide January 2003 Table of Contents

Contextual Info: UTC BD136/138/140 PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON TRANSISTOR DESCRIPTION The UTC BD136/BD138/BD140 are silicon epitaxial planer PNP transistor ,designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

BD138G

Abstract: BD136 BD136 pin bd135 to-126 BD139 PIN DATA power transistor bd136 QW-R204-013 NPN Transistor Characteristics bd136 BD140l
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BD136-138-140 PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON TRANSISTOR „ DESCRIPTION The UTC BD136/BD138/BD140 are silicon epitaxial planer PNP transistor, designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

transistor BD140

Abstract: power transistor bd136 to126 case transistor bd136
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BD136-138-140 PNP EPITAXIAL SILICON TRANSISTOR PNP SILICON TRANSISTOR  1 DESCRIPTION The UTC BD136/BD138/BD140 are silicon epitaxial planer PNP transistor, designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits.

NTC 220-11

Abstract: PHILIPS TRANSMITTING BIPOLAR Philips Semiconductors Small-signal Transistors Selection guide
Contextual Info: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 1 Transmitting transistor design transistors are suitable, see panel, and Philips Semiconductors’ portfolio includes both types. Their relative merits are summarized later in this section. First,

philips blx15

Abstract: BLX15 Philips Application BLX15 TRANSISTOR blx15 Blx15 philips 4312 020 36640 blx15 push pull PHILIPS 4312 amplifier carbon resistor CIL TRANSISTOR 188
Contextual Info: PHI L IP S INTERNATIONAL bSE D m 7110fl2ki ODb3471 R74 BLX15 PHIN _ _ _ _ _ _ _ _ _ A_ _ _ _ _ _ _ H.F./V.H.F. POWER TRANSISTOR Silicon n-p-n power transistor for use in industrial and military s.s.b. and c.w. equipment operating in the h.f. and v.h.f. band:

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

philips blx15

Contextual Info: N AMER PHILIPS/DISCRETE b^E ]> • b b S B ' m PDE^S74 bOO « A P X BLX15 _ A H.F./V.H.F. POWER TRANSISTOR Silicon n-p-n power transistor for use in industrial and military s.s.b. and c.w. equipment operating in the h.f. and v.h.f. band:

tip122 tip127 audio amp schematic

Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
Contextual Info: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.

TPM4040

Abstract: ITT 1N4007 BALLAST MOTOROLA TRANSISTOR UO 112 1N4007 motorola rf Power Transistor 1N4007, ITT 1N4007 DC COMPONENTS tantal PACKAGE 1N4007 itt
Contextual Info: MOT OROL A SC XSTRS/R F 4bE D • f c>3t , 72S4 GO^Sa^M fi « f l O T h ~T=-3 3 ~ 3 -~ l MOTOROLA m SEM ICO NDUCTOR TECHNICAL DATA TPM 4040 The RF Line UHF Power Transistor The TPM4040 is an internally matched transistor in a push-pull package specially

transistor BD 141

Abstract: BD139G bd139 140 BD139-25 BD139 NPN transistor Bd139 operation of BD 139 bd135 diagram
Contextual Info: BD135, BD137, BD139 Plastic Medium Power Silicon NPN Transistor This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. http://onsemi.com Features

BD139

Abstract: BD135 power transistor bd139 transistor BD140 TRANSISTOR NPN BD139 BD136 BD137 BD140 bd139 Complement
Contextual Info: KSD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD136 and BD140 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage : BD135 : BD137 : BD139 Collector Emitter Voltage : BD135

BD139 time

Abstract: bd140 Complement BD136
Contextual Info: BD136/138/140 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD135, BD137 and BD139 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Symbol Collector Base Voltage : BD136 : BD138 : BD140 Collector Emitter Voltage : BD136

BD135

Contextual Info: BD135 / 137 / 139 NPN Epitaxial Silicon Transistor Features • Complement to BD136, BD138 and BD140 respectively Applications • Medium Power Linear and Switching 1 1. Emitter TO-126 2.Collector 3.Base Ordering Information Part Number Marking BD13516S BD1356STU

transistor BD139 N

Abstract: TRANSISTOR NPN BD139 CIRCUIT DIAGRAM OF BD135 bd139 equivalent BD139 N transistor bd139 TRANSISTOR NPN BD140 bd139 data sheet BD139 transistor BD139 NPN transistor download datasheet
Contextual Info: BD135 BD137/BD139 NPN SILICON TRANSISTOR n SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD135, BD137 and BD139 are silicon epitaxial planar NPN transistors in Jedec SOT-32 plastic package, designed for audio amplifiers and drivers utilizing complementary or quasi

transistor BD139 N

Abstract: bd139 Complement
Contextual Info: KSD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD136 and BD140 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Collector Base Voltage Symbol : BD135 VcB O Rating Unit 45 V : BD137 60 V

BD135C

Contextual Info: SEMICONDUCTOR BD136 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A B FEATURES ・High Current. Max. : -1.5A ・Low Voltage (Max. : -45V) ・DC Current Gain : hFE=40Min. @IC=-0.15A ・Complementary to BD135. D C E F G H DIM

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD135/BD137/BD139 TRANSISTOR（NPN） TO-126 FEATURES •High Current 1.5A 1. EMITTER ·Low Voltage(80V) 2. COLLECTOR 3. BASE 123 MAXIMUM RATINGS* TA=25℃ unless otherwise noted

Contextual Info: SEMICONDUCTOR BD135 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A B FEATURES ・High Current. Max. : 1.5A ・Low Voltage (Max. : 45V) ・DC Current Gain : hFE=40Min. @IC=0.15A ・Complementary to BD136. D C E F G H DIM A B

BD139 transistor

Abstract: BD139 power transistor bd139 BD135 BD135 NPN transistor power transistor bd135 bd137 Transistor power transistor bd137 of bd139 TRANSISTOR BD139
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD135/BD137/BD139 TRANSISTOR NPN TO-126 FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) 1. EMITTER Collector current 1.5 A ICM: Operating and storage junction temperature range

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD135/BD137/BD139 TRANSISTOR NPN TO-126 FEATURES •High Current(1.5A) 1. EMITTER ·Low Voltage(80V) 2. COLLECTOR 3. BASE 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted )

Contextual Info: BD135T / BD137T / BD139T NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are designed as Audio Amplifier and Drivers Utilizing. E C B • TO-126 Plastic Package Absolute Maximum Ratings Ta=25 OC Parameter Symbol Value BD135T BD137T BD139T Unit Collector Emitter Voltage

Contextual Info: BD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD136, BD 138 and BD140 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic C ollector Base Voltage Sym bol : BD135 Rating Unit 45 V : BD137