TRANSISTOR BD 370 B Search Results

bo434

Abstract: b0436 TRANSISTOR BD 437 BD 434 transistor BD 141 BD436 DIN137 80442 transistor 438 Q62702-D202
Contextual Info: - ESC D • ÖS35L.05 000M3bfl 3 M S I E â 8236320 SIEMENS/ SPCL. SEMICONDS • r- j w ? BD 434 PNP Silicon Epibase Transistors BD 436 J6 8 D _ SIEMENS AKTIEN6ESELLSCHAF - BD 438 BD 440 BD 442 Pow er transistors for com plem entary A F stages

power transistor mrc 438

Abstract: mrc 436 mrc 438 transistor mrc 439 mrc 442 mrc 437 transistor bd 370 siemens d213 transistor BD 370 b mrc 439
Contextual Info: - ESC D • ñ23SbQS 0Q043bfl 3 « S I E G 8236320 SIEMENS/ SPCL. SEMICONDS PNP Silicon Epibase Transistors SIEMENS AKTIENGESELLSCHAF J68 BD434 BD 436 D _ - BD 438 BD440 BD442 Power transistors for com plem entary AF stages The transistors BO 434, BD 436, BD 438, BD 440 and BD 442 are PNP silicon epibase

PTH60G30BD150N

Abstract: PTH62H02AR180M265 PTH59F PTH61
Contextual Info: POSISTORS FO R C IR C U IT PRO TECTIO N PTH9M/59F SERIES FOR POWER TRANSISTOR OVERHEAT PROTECTION PTH9M Part Number * PTH9M04D471TS2F333 PTH59F04D471TS PTH9M04D222TS2F333 ♦PTH59F04D222TS □ BH BG TS 70 25 °C Resistance TS-10 (°C) TS (°C) Max. Voltage

8 pin ic 3773

Contextual Info: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 35E D • E3B33cm 000DQ5M =1 ■ 33-/3 PROFESSIONAL/COMMERCIAL GRADE APPLICATION GENERAL PURPOSE POWER TRANSISTORS IN TO-2Q4AA PACKAGE Polarity Ic VCE0 SUS hFE@ Ic & VCE min/max Device 2N 3055 2N 3232 2N 3442

bfw10 transistor

Abstract: pin configuration of BFW10 BFW10 pins bf 194 pin configuration CIL 108 transistor bf 194b transistor bf 179 transistor BF 245 PIN CONFIGURATION BF 494 BF 194 transistor
Contextual Info: METAL-CAN & EPOXY TRANSISTORS CON TINENTAL DEVICE INDIA 3EE D • S3fl33T4 DDOOOlt T COMMERCIAL/ENTERTAINMENT APPLICATIONS VCEO VCBO VEBO hFE at bias Voíts Volts Volts min min/max min min Device Cob ts 1C VCE ICM PTA ICBO VCE sat fT mA Volts mA mW Volts MHz Pf nsec

Contextual Info: r= 7 SGS-THOMSON ^ 7 TSD2902 [j}fflO Mi[LI gTrœROD©i RF & MICROWAVE TRANSISTO RS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to

LI 20 AB

Abstract: TSD2904 SGS 7301 M113
Contextual Info: r=7 SGS-THOMSON TSD2904 RF & MICROWAVE TRANSISTO RS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to

Contextual Info: CALOGIC CORP MAE J> 1Ö4M322 00003SM 3 • C G C vJ 3N188-3N181 'T Z FEATURES • • • • l- 'Z I ABSOLUTE MAXIMUM RATINGS Ta - 25°C unless otherwise specified Very High Input Impedance High Gate Breakdown 3N190-3N191 Zener Protected Gate 3N188-3N189

KVL01

Contextual Info: MC100LVEL01 3.3V ECL 4−Input OR/NOR The MC100LVEL01 is a 4−input OR/NOR gate. The device is functionally equivalent to the EL01 device and works from a 3.3 V supply. With AC performance similar to the EL01 device, the LVEL01 is ideal for low voltage applications which require the ultimate in

4016 ic

Contextual Info: COS/MOS INTEGRATED CIRCUIT QUAD • • • • • • • • • • • • • • • A o \ t , * > h c c îh c f « m b B IL A T E R A L S W IT C H 20V D IG IT A L OR ± 10V P E A K -T O -P E A K SW ITCHING 2 8 0 « T Y P IC A L ON RESISTANCE FOR 15V O PE R ATIO N

KVL51

Contextual Info: MC100LVEL51 3.3V ECL Differential Clock D Flip-Flop The MC100LVEL51 is a differential clock D flip-flop with reset. The device is functionally equivalent to the EL51 device, but operates from a 3.3 V supply. With propagation delays and output transition times

BDX33C darlington pair

Abstract: 40349 transistor BDY29 2N3773 transistor 2N3055 RCA 528 2n3771 2N3772 RCA RCA transistor 2n3055 RCA 40250
Contextual Info: Ic to 80 A . . . P t to 300 W . . . V c E to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES <e “ 1.6 A max. P T " 8.76 W max. ITO-39J* le a 1 .S A max. PT - 8.7S W m u . TO-391* A i t . AAi 9U X 9U lc » 3.S A max. P y « 10 W max. (TO-391* lc * 4 A max. Pt - GO W max.

Contextual Info: COS/MOS INTEGRATED CIRCUITS _ n 4 ^ /+ » ‘¡ ¡ S Ä 4-BIT LATCH/4-TO-16 LINE DECODER: HCC/HCF 4514B OUTPUT "H IG H" ON SELECT HCC/HCF 4515B OUTPUT "LOW" ON SELECT • • • • • • Q UIESCENT C U R R E N T SPECIFIED TO 2 0 V FOR HCC D EVICE STRO BED INPUT LATC H

KEP65

Abstract: KP65
Contextual Info: MC100EP16VB 3.3V / 5V ECL Differential Receiver/Driver with High and Low Gain The EP16VB is a world−class differential receiver/driver. The device is functionally equivalent to the EP16 and LVEP16 devices but with both high and low gain outputs. QHG and QHG outputs have a DC

100EL90

Abstract: Application Note AND8002/D
Contextual Info: MC100EL90 −3.3V / −5V Triple ECL Input to PECL Output Translator The MC100EL90 is a triple ECL to PECL translator. The device receives either −3.3 V or −5 V differential ECL signals, determined by the VEE supply level, and translates them to standard +5 V differential PECL

TBB204G

Abstract: TBB 204 TBB204 colpitts oscillator 400 MHz NEOSID 220 TBB 200 G 3VF8 SMD KRP 8 PIN SMD IC L02
Contextual Info: S IEM EN S Mixer / Oscillator TBB 204 G Bipolar 1C Features • Low noise • Low spurious signal content good suppression of input signal/output signal • High conversion gain • High isolated RF, IF, LO-parts • W ide range of supply voltage (down to 3 V)

RCA 40313

Abstract: RCA 528 2n3773 rca 40349 RCA 40349 2N3441 RCA 2N3442 40328 BUX 115 RCA 40250
Contextual Info: Ic to 80 A . . . Pt to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le - 1 6 A m a x . • 26 0 W m ax. lc • 8 0 A m a x . P t - 3 0 0 W m ax. <e “ 1 .6 A m a x. le a 1 . S A m ax . l c » 3.S A m ax . lc * 4 A m a x . lc a 4 A m ax. le • 3 A m ax.

100lvel90

Contextual Info: MC100LVEL90 −3.3V / −5V Triple ECL Input to LVPECL Output Translator The MC100LVEL90 is a triple ECL to LVPECL translator. The device receives either −3.3 V or −5 V differential ECL signals, determined by the VEE supply level, and translates them to +3.3 V differential LVPECL

Contextual Info: b llò / m u ò S G S “ T H 0 ,V ,S 0 N D 7C IM TFRRATFil L. - a . « CIRCUITS 7929225 ß I ? c >2 ^ 2 3 7 ^ I o o i^ a ? a | ^ HCG/HCF 4515B-A — ✓ j . i S G S S EM IC O N D U C T O R C O R P 4-BIT L A TCH/4-T0-16 LIN E DECODER: HCC/HCF 4514B OUTPUT "HIGH" ON S ELE C T

RCA 40636 transistor

Abstract: rca 40636 rca 2N3771 power circuit 40636 rca rca 40327 300W TRANSISTOR AUDIO AMPLIFIER 40636 220v 300w ac regulator circuit 2N3055 RCA 40327
Contextual Info: Ic to 80 A . . . P t to 300 W . . . V cE to 170 V H O M ETAXIAL-BASE N-P-N POWER TYPES le - 16 A max. •260 W max. <e “ 1.6 A max. le a 1 . S A max. lc » 3 .S A max. lc * 4 A m ax. lc a 4 A max. le • 3 A max. le “ 3 A max. le - 7 A max. lc a 1 S A max.

KEP33

Abstract: EP33 HEP33 HP33 MC100 MC100EP33 MC10EP33 KP33
Contextual Info: MC10EP33, MC100EP33 3.3V / 5VĄECL B4 Divider The MC10/100EP33 is an integrated B4 divider. The differential clock inputs. The VBB pin, an internally generated voltage supply, is available to this device only. For single-ended input conditions, the unused

MC100LVEL01

Abstract: MC100LVEL01D 1085 SPICE model
Contextual Info: MC100LVEL01 3.3VĄECL 4-Input OR/NOR The MC100LVEL01 is a 4–input OR/NOR gate. The device is functionally equivalent to the EL01 device and works from a 3.3 V supply. With AC performance similar to the EL01 device, the LVEL01 is ideal for low voltage applications which require the ultimate in

KVL51

Abstract: MC100LVEL51 MC100LVEL51D
Contextual Info: MC100LVEL51 3.3VĄECL Differential Clock D FlipĆFlop The MC100LVEL51 is a differential clock D flip-flop with reset. The device is functionally equivalent to the EL51 device, but operates from a 3.3 V supply. With propagation delays and output transition times

RCA 528

Abstract: 2n3055 complement rca 2n3771 40349 transistor RCA 528 Transistor PJ 257 2n5578 RCA 2N3055 transistor 2n3772 complement 2N3055 RCA
Contextual Info: Ic to 80 A . . . Pt to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES <e “ 1.6 A m ax. P T " 8 .7 6 W m ax. ITO -39J* le a 1 .S A m ax. P T - 8 .7 S W m u . TO-391* A it . . A A i 9U X 9U lc » 3 .S A m ax. P y « 10 W m ax. (TO-391* lc * 4 A m ax.