1S82 Search Results

1SS42

Abstract: 1S10 1SB18
Contextual Info: - 26 - 1S812 1S813 1S814 1S815 1S816 1S817 1S818 1S819 1S820 1S821 1S822 1S823 1S824 1S825 1S841 1 SS 4 2 1S843 1S 844 1S844 1S844® 1S845 1S846 1S846® 1S846® 1S847 1S848 1S848® 1S848® 1S849 1S 850 1S850® 1S850® 1S851 1S 852 1S 10 33 1S 10 3 4 1S 10 3 5

iss16

Abstract: 1S10 1SS42 MA242C
Contextual Info: - 26- 1S812 1S813 1S814 1S815 1S816 1S817 1S818 1S819 1S820 1S821 1S822 1S823 1S824 1S825 1S841 1 SS 4 2 1S843 1S 844 1S844 1S844® 1S845 1S846 1S846® 1S846® 1S847 1S848 1S848® 1S848® 1S849 1S 850 1S850® 1S850® 1S851 1S 852 1S 10 33 1S 10 3 4 1S 10 3 5

1S825

Abstract: ISS16 1S10 1SS42 1S823
Contextual Info: - 26- 1S812 1S813 1S814 1S815 1S816 1S817 1S818 1S819 1S820 1S821 1S822 1S823 1S824 1S825 1S841 1 SS 4 2 1S843 1S 844 1S844 1S844® 1S845 1S846 1S846® 1S846® 1S847 1S848 1S848® 1S848® 1S849 1S 850 1S850® 1S850® 1S851 1S 852 1S 10 33 1S 10 3 4 1S 10 3 5

ls842

Abstract: 1S10 1SS42 SC-10
Contextual Info: - 26- 1S812 1S813 1S814 1S815 1S816 1S817 1S818 1S819 1S820 1S821 1S822 1S823 1S824 1S825 1S841 1 SS 4 2 1S843 1S 844 1S844 1S844® 1S845 1S846 1S846® 1S846® 1S847 1S848 1S848® 1S848® 1S849 1S 850 1S850® 1S850® 1S851 1S 852 1S 10 33 1S 10 3 4 1S 10 3 5

1SS42

Abstract: 1SB18 1S822 is1145 1S10 TS1200 1S1260 1S823
Contextual Info: - 26- 1S812 1S813 1S814 1S815 1S816 1S817 1S818 1S819 1S820 1S821 1S822 1S823 1S824 1S825 1S841 1 SS 4 2 1S843 1S 844 1S844 1S844® 1S845 1S846 1S846® 1S846® 1S847 1S848 1S848® 1S848® 1S849 1S 850 1S850® 1S850® 1S851 1S 852 1S 10 33 1S 10 3 4 1S 10 3 5

Contextual Info: TEXAS INSTR LOGIC S5E fl1b l723 OOfib^b *! t SNS4HC4075, SN74HC4075 TRIPLE 3-INPUT OR GATES '• F U Z - Z .l D2684, OECEMBER 1S82-REVISEO SEPTEMBER 1887 SN64HC4076 . . . J PACKAGE SN74HC4076 . . . D OR N PACKAGE (TOP VIEW! Package Options Include Plastic "Sm all

1S10

Abstract: 1SS42 1S825 1S817
Contextual Info: - 26- 1S812 1S813 1S814 1S815 1S816 1S817 1S818 1S819 1S820 1S821 1S822 1S823 1S824 1S825 1S841 1 SS 4 2 1S843 1S 844 1S844 1S844® 1S845 1S846 1S846® 1S846® 1S847 1S848 1S848® 1S848® 1S849 1S 850 1S850® 1S850® 1S851 1S 852 1S 10 33 1S 10 3 4 1S 10 3 5

1N9168

Abstract: 1SR35-100A 1SS135 1N41S4 1S2473 RB100A 1n700 1ss252 RB721Q ZENER3
Contextual Info: Diodes Quick reference tmmmmmmmmmmmmmmi I Application Vr V MSR ( ¿2.5) I Molded I SP9Pln Package 100-35 (41.8) Part No. I TO-220FD Ultra High-speed Low-leakage High-vottage Switching « I 00-34 U 1.8) IUSD (¿1.8) 10041(417) 1S82787 1SS 134 1SS133 50 1S2472

Contextual Info: '36.5*0.5 79.5— -r*-2.5 2-25.5 NOTES; A TO BE MEASURED WITH IN 2mmFROMEZ3 A in coupling with the plug housing mating SATISFIES FUNCTION 3 APPLIED CONTACT P/N 772777,772779 4 PRODUCT SPEC No. 708-57SS 5 IN COUPLING WITH THE PLUG HOUSING MATING FORCE 29.4NC3Kg«MAX. WITHOUT REC CONTACT

Contextual Info: 54E D SONY* • fl3023û3 GG04b?7 743 « S O N Y 7^ /6 *-«2? CXK58257AP/AM 12LB 32768-word x 8-bit High Speed CMOS Static RAM SO NY C O R P / C O M P O N E N T PROD S Description CXK58257AP/AM is a general purpose high speed CMOS static RAM organized as 32768 words by 8 bits.

824P

Contextual Info: '36.5 79.5—- r*-2.5 *0.5 2-25.5 NOTES; A TOBE MEASURED WITH IN 2mmFROMEZ3 A in coupling with the plug housing mating SATISFIES FUNCTION 3 APPLIED CONTACT P/N 772777,772779 4 PRODUCT SPEC No. 708-57SS 5 IN COUPLING WITH THE PLUGHOUSING MATING FORCE 29.4NC3Kg«MAX. WITHOUT REC CONTACT

TRANSISTOR SMD T1P

Abstract: schematic computer 80386 chip mother board sis 662 NEW DATABASE - 350 MILLION FROM 8500 MANUFACTURERS 80486 microprocessor circuit diagram SmD TRANSISTOR a77 SMD Transistor jly PALCE16V8-10 ksp 13 f10 ksp 13 replacement
Contextual Info: a Dynamic Memory Design 1991/1992 Data Book/Handbook Advanced Micro Devices % M aeey D ynam ic M em ory D esign 1991/1992 Data Book/Handbook D V A N C E D M I C R O D E V I C E S 1991 Advanced Micro Devices, Inc. A dvanced Micro Devices reserves the right to make changes in its products

Contextual Info: KM23V4100D G CMOS MASK ROM 4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION » Switchable orginization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation: 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V

schneider LC1-D09 wiring diagram

Abstract: Schneider LC1D18 wiring diagram MPSF23 HOM1632L200TCFT WIRING DIAGRAM lc1d32 HOM612L100 Square D Relay Class 8502 QOC20U100 QOC30U NQOD454L600
Contextual Info: 2008 SQUARE D REF GUIDE Flip 0514.qxd SQUARE D INFORMATION RESOURCES Local Square D Sales Office: _ _ Square D Customer Information Center: 1-888-SQUARE D (1-888-778-2733) The 2008 Pocket Digest still contains Schneider Electric’s best selling catalog numbers from

Contextual Info: October 1989 Edition 1.0 FUJITSU DATA SHEET : MB85410-30/-40 64K X 8 CMOS SRAM MODULE CMOS 65,536 WORDS x 8-BIT HIGH SPEED STATIC RANDOM ACCESS MEMORY MODULE The Fujitsu MB85410 is a fully decoded, CMOS static random access memory module consists of eight MB81C71A devices mounted on a 60-pin plastic board.

OPB253A

Abstract: 0P223 1f34 TRW 1016 IF-40 N111 J49d
Contextual Info: OPTEK TECHNOLOGY INC DfaE D I b?"]flsaa bI TRYw Optoelectronics Division TRW Electronic Components Group Product Bulletin 5262 January 1985 Reflective Object Sensor Type OPB253A •240 9.16 •itt ( 1 . 7 1 ) .057 (1.45) .135(3.43) .115 12.92) "1 r • Phototransistor output

jrm a55

Abstract: tip 0ff 0401 ANALOG irf 5630 ko 224 4K tantalum capacitors jrm a45 irf 7408 bt 4840 pinout diagram A9F7 29 INCH crt tv FBT pinout chassis 3111 253 3266 2e jrm A45
Contextual Info: PR E FA C E T he IBM P erson al C o m p u te r T ech n ical R eferen ce M anual is designed to pro v id e h ard w are design an d in terfa ce in fo rm atio n . T h is p u b licatio n also provides B asic In p u t O u tp u t S y stem B IO S in fo rm atio n as w ell as p ro g ram m ing su p p o rt m a tter.

1V100RK

Abstract: 1P75 1r33 1u100 1C39RK 1V120
Contextual Info: E Republic Electronics Corp. Ceramic Capacitors for over 45 years TEMPERATURE COMPENSATING CAPACITORS • NPO through N5600 Specifications Electrical Specifications Capacitance: Measured at 1 MHz, 25°C Capacitance Tolerance: Last letter o f part number. B

Contextual Info: ITEM <£> PART NUMBER BODY 131-1693-101 ZINC GOLD PL .00001 MIN OVER NICKEL PL .DD015 MIN OVER COPPER PL .0 0 0 5 MIN 131-1693-106 ZINC NICKEL PL .DD015 MIN OVER COPPER PL .0 0 0 5 MIN 131-1693-116 ZINC NICKEL PL .DD015 MIN OVER COPPER PL .0 0 0 5 MIN ITEM <£

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

4229P-LOO-3C8

Contextual Info: MOT OR OL A SC 1EE D | b3fe,72S4 QOflSlGS b | XSTRS/R F MOTOROLA M J1 2 0 2 0 TECHNICAL DATA MJ12021 MJ12022 SEMICONDUCTOR De s i g n e r ’ s D a t a She et 5 .0 , 8 .0 and 1 5 A M P E R E NPN SILIC O N DEFLECTION POWER T R A N SISTO R S HIGH PERFORMANCE NPN

FD6666 diode

Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Contextual Info: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5

v32intfc

Contextual Info: m ti» ART Preliminary Data Addendum September 8,1992 Microelectronics AT&T High-Speed Data Pump Chip Sets 3.3 Volt Operation Addendum Introduction Features AT&T is now offering V.32bis plus V.17 FAX data pump chip sets that operate at 3.3 Volts for .use in

Contextual Info: International IOR Rectifier PD-9.1585A IRG4PC40K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10ps @ 125°C, VGE = 15V