TRANSISTOR BA 14 Search Results

rohm 2sd1664

Contextual Info: Medium Power Transistor 32V,1A 2SB1132 / 2SA1515S / 2SB1237 2SB1132 2SA1515S 4+ − 0.2 1.5 +0.2 −0.1 (1) 0.4 + − 0.1 1.5 + − 0.1 (2) (3) 0.4 +0.1 −0.05 0.5 + − 0.1 0.4 0.1 1.5 + − 0.1 3.0 + − 0.2 5 Abbreviated symbol: BA (2) 14.5 +

telefunken ed 32 5000

Contextual Info: _ BFP81 ViSH A Y ▼ Vishay Telefunken Silicon NPN Planar RF Transistor E lectrostatic sensitive device. O bserve precautions fo r handling. ^ M Applications RF am plifier up to 2 GHz, especially fo r m obile te le ­ phone. Features • Sm all fe ed ba ck capacitance

transistor ba 752

Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS ¿¿PA! 752 SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in: millimeter This product is Dual N-Channel MOS Field Ef­ fect Transistor designed for power m anagem ent application of notebook com puters, and Li-ion ba t­

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3582 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION T h e 2 S C 3 5 8 2 is an NPN ep ita xia l silicon tra n s is to r d e sig n e d fo r use in lo w -no ise and sm all signal a m p lifie rs from V H F ba nd to U H F band.

2N4400

Contextual Info: 45E D • T Ü C1 7 E S G GG177bl TÔS4 1 TOSHIBA TRANSISTOR 2N4400 SILICON NPN EPITAXIAL T Y P E PCT PROCESS -? TO SHI BA (D IS C R E T E / O P T O ) r> FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current : ICEV= 100nA(M a x -) , I]jEV=-100nA(Max. )

Contextual Info: M C C TO-92MOD Plastic-Encapsulate T ra n s is to rs ^ ^ 2SA966 TRANSISTOR PNP FEATURES !Is»lpat(on TO -92M O D P cm; 0.9W (Tamb=25°C) 1. EMITTER Icm: 2 .COLLECTOR -1.5 A k il^ iftCftf»-ba«e voltage V (BR)CBO: -30 V 3 .BASE temperature range 1 23 Tj,Tsig: -55 (C to + 1501c

2SC1817

Abstract: TRANSISTOR PJ
Contextual Info: S El ivi i C O N D U C T O R l TEI' .i l'nTIVTP, RP POWER TRANSISTOR t * 2SC1817 is de sign od for ilF.and VHP Power Amplifier. 'Applications. Most useful for 1 2 - w a t t SSß C i t i z e n s Ba nd Transceiver O u t p u t Stage. 1„ Featui'es / , 15 W min.

Contextual Info: □ Q B' ï ba b 3 • ' ' P 3^-11 S G S -T H O M S O N G F . H L iÊ T T M D Ê i B U Z 4 2 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR S G S-THOMSON TYPE V Dss BUZ42 500 V 3DE RDS on 2 Q » Id 4 A • HIGH VOLTAGE - FOR OFF-LINE SM PS • ULTRA FAST SW ITCHING FOR OPERATION

Contextual Info: TriQuint TM Püw ER BAN D SEMICONDUCTOR T 1 P 2 7 0 1 0 1 2 -SP 10 W, 12V, 500 M H z - 3 GHz, P o w e r b a n d p H E M T RF P o w e r T r a n s i s t o r Introduction The T1P2701012-SP is a PO W ER BA N D ™ discrete pHEMT, depletion mode R F Power Transistor designed

Contextual Info: SKHI 24 R . Absolute Maximum Ratings Symbol Conditions U6.43*4 U6.-3*4 d.%BLA%'9, 8.A F%AA'H +.'B&1, A)*3¥ 54A%B 9*14&' +.'B¥ M]*1/O E%BA%B A,&K G%),4B E%BA%B &+,)&1, G%),4B M3&`¥O 3&`¥ 9J*BG/*41 -),a%,4GH C.'',GB.) ,3*BB,) +.'B&1, 9,49, &G).99

2SA1300L

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE „ DESCRIPTION * Strobo Flash Applications. * Medium Power Amplifier Applications. „ FEATURES * High DC Current Gain and Excellent hFE Linearity. * hFE 1 =140-600, (VCE= -1V,IC= -0.5A)

C0033

Abstract: 2052-5636-02 ATC100A PH2323-14 6010.5 T50M50 VCC28
Contextual Info: ArfKO‘A W an A M P company CW Power Transistor, 14W 2.3 GHz PH2323-14 V2.00 Features • • • • • • • • NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry Gold Metalization System Hermetic Metal/Ceramic Package

transistor smd marking BA RE

Abstract: transistor smd marking PE FR MARKING SMD TRANSISTOR CMBT2484 transistor smd marking BA sot-23
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR CMBT2484 SOT23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: 1U 1 2 LOW NOISE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C)

transistor ck 112

Abstract: MB3604 B3604
Contextual Info: FU JIT S U HIGH FREQUENCY OPERATIONAL AMPLIFIER I MB3604 1 1 December 1987 Edition 1.0 HIGH FR EQUENCY O PE R A TIO N A L A M P L IFIE R T h e Fu jitsu M B3604 is a m onolithic high frequency operational am plifier fabricated by Fujitsu Bipolar Technology.

CRITCHLEY 9003

Abstract: siemens CNY17-2 TE 2161 CRITCHLEY 9004 BS6317 "Critchley 9003 Critchley step down transformer winding ratio critchley label Critchley transformers
Contextual Info: ICs for Communications Analog Line Interface with the ARCOFI -BA PSB 2161 Application Note 06.96 PSB 2161 Revision History: Current Version: 06.96 Previous Version: Page Page in previous (in current Version Version) Subjects (major changes since last revision)

HRP-5

Abstract: BA33CC0WT BA33DD0WT BA50DD0WT to252-3-11 hrp5
Contextual Info: Standard Fixed Output LDO Regulator Series Standard Fixed Output LDO Regulators BA□□DD0 Series, BA□□CC0 Series Standard Fixed Output LDO Regulators with Shutdown Switch BA□□DD0W and,BA□□CC0W Series No.09021EAT01 ●General Description Standard Fixed Output LDO Regulators are low-saturation regulators, available for output s up to 2A/1A. ROHM has a wide output

BA033CC0WFP

Abstract: BA033CC0WT BA33CC0WT BA33DD0WT BA50DD0WT equivalent transistor bc 172 b ROHM 200V 200mA DIODE BACC0Wfp
Contextual Info: Standard LDO Regulators Standard Fixed Output LDO Regulators BA□□DD0 Series, BA□□CC0 Series Standard Fixed Output LDO Regulators with Shutdown Switch BA□□DD0W and,BA□□CC0W Series No.11021ECT01 ●Description Standard Fixed Output LDO Regulators are low-saturation regulators, available for output s up to 2A / 1A. ROHM has a wide

TRANSISTOR SMD A4 L pnp

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR TRANSISTOR CMBT 9012 SOT-23 PIN CONFIGURATION PNP 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION

smd transistor marking PA

Abstract: "marking PA" CMBA857
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON TRANSISTOR CMBA857 SOT23 PIN CONFIGURATION PNP 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING : AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION

9013 smd

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR CMBT 9013 SOT-23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION

transistor smd marking BA sot-23

Abstract: transistor smd sot-23 marking BA
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR CMBT9014 SOT-23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION

15d smd transistor

Abstract: pnp 9015 SMD 9015 SMD transistor smd marking BA sot-23 9015 sot-23 C 9015 transistor
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR TRANSISTOR CMBT 9015 SOT-23 PIN CONFIGURATION PNP 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION

CMBA847

Abstract: transistor smd marking BA sot-23
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CMBA847 SOT23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING : AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION

transistor smd marking NE

Abstract: transistor smd marking BA RE SOT23 NE CMBT847 transistor smd marking PE
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CMBT847 SOT23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION