TRANSISTOR BA 14 Search Results

2SB1237

Abstract: 2SA1515S 2SB1132 2SD1664 2SD1858 SC-72 T100 2SB1132-QR
Contextual Info: Medium Power Transistor 32V,1A 2SB1132 / 2SA1515S / 2SB1237 2SB1132 2SA1515S 4+ − 0.2 1.5 +0.2 −0.1 (1) 0.4 + − 0.1 1.5 + − 0.1 (2) (3) 0.4 +0.1 −0.05 0.5 + − 0.1 0.4 0.1 1.5 + − 0.1 3.0 + − 0.2 5 Abbreviated symbol: BA (2) 14.5 +

rohm 2sd1664

Contextual Info: Medium Power Transistor 32V,1A 2SB1132 / 2SA1515S / 2SB1237 2SB1132 2SA1515S 4+ − 0.2 1.5 +0.2 −0.1 (1) 0.4 + − 0.1 1.5 + − 0.1 (2) (3) 0.4 +0.1 −0.05 0.5 + − 0.1 0.4 0.1 1.5 + − 0.1 3.0 + − 0.2 5 Abbreviated symbol: BA (2) 14.5 +

BE555MN

Contextual Info: ANALOGUE;_ _ INTEGRATED C O N T R O L , TEMPERATURE 13 A 7 2 e 13 A 7 2 s X CIRCHTTS H im I N D U S T R I A L CONTROLLED TRANSISTOR S.A. ARRAYS Features : BA 726 Transistor pair offset voltage . - max.+3 Max. bias current # I,;=100uA : 6 Max. bias current @ I(‘.=10uA :

telefunken ed 32 5000

Contextual Info: _ BFP81 ViSH A Y ▼ Vishay Telefunken Silicon NPN Planar RF Transistor E lectrostatic sensitive device. O bserve precautions fo r handling. ^ M Applications RF am plifier up to 2 GHz, especially fo r m obile te le ­ phone. Features • Sm all fe ed ba ck capacitance

transistor ba 752

Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS ¿¿PA! 752 SWITCHING DUAL N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in: millimeter This product is Dual N-Channel MOS Field Ef­ fect Transistor designed for power m anagem ent application of notebook com puters, and Li-ion ba t­

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3582 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION T h e 2 S C 3 5 8 2 is an NPN ep ita xia l silicon tra n s is to r d e sig n e d fo r use in lo w -no ise and sm all signal a m p lifie rs from V H F ba nd to U H F band.

MRF911

Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA MRF911 The RF Line f j = 5.0 G H z @ 30 m A HIGH FREQUENCY TRANSISTOR NPN SILICO N HIGH FREQUENCY TRANSISTOR . . . des ig n ed w id e ba n d NPN S IL IC O N p r i m a r i l y f o r use in h ig h gain, l o w - n o is e t u n e d and

transistor smd z8

Abstract: RF NPN POWER TRANSISTOR C 10-50 GHZ SMD Transistor z6 smd transistor z8 smd transistor Z10 transistor 6 pin SMD Z2 Z808 z202 3 pin TRIMMER capacitor 6 pin TRANSISTOR SMD Z8
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6408 NPN Silicon RF Pow er Transistor D e sig n e d fo r PCN and PCS ba se s ta tio n a p p lic a tio n s , th e M R F 6 4 0 8 incorporates high value em itter ballast resistors, gold metallizations and offers

2N4400

Contextual Info: 45E D • T Ü C1 7 E S G GG177bl TÔS4 1 TOSHIBA TRANSISTOR 2N4400 SILICON NPN EPITAXIAL T Y P E PCT PROCESS -? TO SHI BA (D IS C R E T E / O P T O ) r> FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current : ICEV= 100nA(M a x -) , I]jEV=-100nA(Max. )

Contextual Info: M C C TO-92MOD Plastic-Encapsulate T ra n s is to rs ^ ^ 2SA966 TRANSISTOR PNP FEATURES !Is»lpat(on TO -92M O D P cm; 0.9W (Tamb=25°C) 1. EMITTER Icm: 2 .COLLECTOR -1.5 A k il^ iftCftf»-ba«e voltage V (BR)CBO: -30 V 3 .BASE temperature range 1 23 Tj,Tsig: -55 (C to + 1501c

2N6439

Abstract: BH Rf transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line 60 W — 225-400 MHz CO N TR O LLE D " Q " B R O A D BA N D RF POWER TRANSISTOR NPN SILICO N RF POWER TRANSISTOR . , . designed p rim a rily fo r w id e b a n d large-signal o u tp u t a m p lifie r stages in the 2 2 5 -4 0 0 M H z fre q u e n c y range.

2SC1817

Abstract: TRANSISTOR PJ
Contextual Info: S El ivi i C O N D U C T O R l TEI' .i l'nTIVTP, RP POWER TRANSISTOR t * 2SC1817 is de sign od for ilF.and VHP Power Amplifier. 'Applications. Most useful for 1 2 - w a t t SSß C i t i z e n s Ba nd Transceiver O u t p u t Stage. 1„ Featui'es / , 15 W min.

Motorola 3-351

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA B U S5 0 SW IT C H M O D E Series N PN Silicon Power TVansistors The BUS50 transistor is designed for low voltage, high-speed, power switching in in d u ctiv e c irc u its w h e re fail tim e Is c ritic a l. It is p a rtic u la rly su ite d fo r ba ttery

c 2579 transistor

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Frequency Transistor N P N Silico n M PS5179 M otorola Preferred D evice COLLECTOR 3 2 ba se" 1 EMITTER M A X IM U M R A T IN G S Rating C o lle cto r-E m itte r Voltage Symbol Value Unit Vdc Vdc VCEO 12 C o lle c t o r - B a s e Voltage

Contextual Info: TriQuint TM Püw ER BAN D SEMICONDUCTOR T 1 P 2 7 0 1 0 1 2 -SP 10 W, 12V, 500 M H z - 3 GHz, P o w e r b a n d p H E M T RF P o w e r T r a n s i s t o r Introduction The T1P2701012-SP is a PO W ER BA N D ™ discrete pHEMT, depletion mode R F Power Transistor designed

RF TRANSISTOR 10GHZ

Abstract: BFP720 RF TRANSISTOR 10GHZ low noise 2.4ghz lnb RF NPN POWER TRANSISTOR C 10-12 GHZ TRANSISTOR 10GHZ RF Bipolar Transistor bipolar transistor ghz s-parameter 1B marking
Contextual Info: D at a S h ee t , R ev . 1 . 0 , J an ua ry 2 00 9 B FP 72 0 S i G e :C H e t e r oj u n c t i o n W i d e ba n d R F B i p ol a r Transistor S m a l l S i g n a l D i s c r et e s Edition 2009-01-20 Published by Infineon Technologies AG, 85579 Neubiberg, Germany

Contextual Info: SKHI 24 R . Absolute Maximum Ratings Symbol Conditions U6.43*4 U6.-3*4 d.%BLA%'9, 8.A F%AA'H +.'B&1, A)*3¥ 54A%B 9*14&' +.'B¥ M]*1/O E%BA%B A,&K G%),4B E%BA%B &+,)&1, G%),4B M3&`¥O 3&`¥ 9J*BG/*41 -),a%,4GH C.'',GB.) ,3*BB,) +.'B&1, 9,49, &G).99

2SA1300L

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE „ DESCRIPTION * Strobo Flash Applications. * Medium Power Amplifier Applications. „ FEATURES * High DC Current Gain and Excellent hFE Linearity. * hFE 1 =140-600, (VCE= -1V,IC= -0.5A)

IH33

Abstract: LIMING relay ECG978 relay by liming YBS3 LIMING VOLTAGE RELAY APPLICATIONS OF astable multivibrator
Contextual Info: I PH ILIPS E C G I NC 17E D • bbSBTEö ECG978 DUAL TIMING CIRCUIT Sem iconductors 14 13 12 I I FEATURES: • TIM IN G FROM M IC R O SEC O N D S THROUGH HOURS • OPERATES IN BOTH ASTABLE A N D M O N O ­ STABLE M OOES • ADJUSTABLE DUTY C Y C L E • H IGH CURRENT OUTPUT C A N SOURCE OR

C0033

Abstract: 2052-5636-02 ATC100A PH2323-14 6010.5 T50M50 VCC28
Contextual Info: ArfKO‘A W an A M P company CW Power Transistor, 14W 2.3 GHz PH2323-14 V2.00 Features • • • • • • • • NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry Gold Metalization System Hermetic Metal/Ceramic Package

MMBT5086

Abstract: ALI03 Transistor marking S PNP marking VA sot-23
Contextual Info: SAMSUNG S EM I C ONDU C T OR INC MMBT5086 14E D I 0007573 M | PNP EPITAXIAL SILICON TRANSISTOR LOW NOISE TRANSISTOR SO T-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltape Emitter-Base Voltage Collector Current

2n2907 pnp

Abstract: 2n2222 transistor pin b c e 2n2907 TRANSISTOR PNP MPQ6502 2n2222 npn 2N2906 NPN Transistor 2N2907 2N2221 2N2222 2N2906
Contextual Info: Central Sem iconductor Corp. Central Sem iconductor Corp. central sem iconductor Corp. 1 I 1 1 M P Q 6501 M P Q 6502 C OM PLEMENTARY QUAD T R A N SISTOR ♦I JEDEC T O - 116 CASE 145 Adam s Avenue Hauppauge, New York 11 788 D ESCRIPTION The CENTRAL S EM ICONDUCTOR M P Q 6 5 0 1 , MPQ6502, types are comprised of four independent

transistor smd marking BA RE

Abstract: transistor smd marking PE FR MARKING SMD TRANSISTOR CMBT2484 transistor smd marking BA sot-23
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR CMBT2484 SOT23 PIN CONFIGURATION NPN 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING: 1U 1 2 LOW NOISE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C)

BA12003

Abstract: transistor BA RW BA12004 transistor ba EL20M
Contextual Info: BA12001 BA12004 BA12002 BA12003 Driver, 7-channel, high current, high voltage The BA12001, BA12002, BA12003, and BA12004 are high-voltage, high-current transistor arrays consisting of 7 Darlington-connected transistors. Dimensions Units : mm (DIP16) Built-in surge absorbing diodes required