TRANSISTOR B414 Search Results

Contextual Info: 2N4402/4403 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR TO -92 • Collector-Emitter Voltage: Veto =40V • Collector Dissipation: Pe max =625mW ABSOLUTE MAXIMUM RATINGS (Ta =25°C) Characteristic Symbol Rating Unit Collector-Base Voltage

Contextual Info: SAMSUNG S EM I C ON D UC T OR I NC MPS8098 14E D jT 'ib M m a 0007337 M | NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Vbitage: Vcto=60V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic

Contextual Info: S AM S U N G SEMICONDUCTOR INC MPS6601 14E O | 7^ 4142 0007331 3 | NPN EPITAXIAL SILICON TRANSISTOR ' T-29-21 AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: Vceo=25V • Collector Dissipation: Pc max =625mW A B S O L U T E MAXIMUM RATINGS (Ta=25°C)

SOT23 marking sk

Abstract: KSC2715 Transistor marking SK marking sk sot-23 marking sk transistor
Contextual Info: SAMSUNG S EMI C O NDU CT OR 14ED1 INC KSC2715 ? c , b4142 OOO^S? 1 | f ' 3 i m NPN EPITAXIAL SILICO N TRANSISTOR FM RADIO AMP, MIX, CONV OSC, IF AMP SOT-23 • High Power Gain G pe=30dB ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol VcbO VcEO Vebo

Contextual Info: KSR1212 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R=47KQ) • Complement to KSR2212 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic

Contextual Info: KSC2757 NPN EPITAXIAL SILICON TRANSISTOR MIXER OSCILLATOR FOR VHF TUNER S O T -2 3 HIGH <T fr =1100MHz Typ. ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

KSR1108

Abstract: KSR2108 Inverter mma 300
Contextual Info: ISAMSUNG SEMIGONDUGTOR INCjT-SS-J 1 4 E | 7^4145 0007053 1 | KSR1108 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In) • Switching Circuit, inverter, Interface circuit Driver circuit • Built In bias Resistor (Rt=47K(l, Ri=22Kfi)

Contextual Info: SS8050 NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • Complimentary to SS8550 • Collector Current lc =1.SA • Collector Dissipation PC=2W Tc =25 C ABSOLUTE MAXIMUM RATINGS (Ta=25°C ) Ch a ra cteristic

Contextual Info: .SAMSUNG SEMICONDUCTOR INC M PSH 20 mE D | TTbMlME Q0 G 73 fl 4 S J NPN EPITAXIAL SILIC O N TR A N SISTO R VHF TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voftage Emitter-Base Voltage Collector Current

Contextual Info: 6DI15M-12005A y<r7 - h *7 È ± 'N ° 9 — i. — : Outline Drawings POWER TRANSISTOR MODULE 93 I Features 26.5 12.5 • u High Arm Short Circuit Capability • hFEA^v,' High DC Current Gain • yyj — —KF*g Including Freewheeling Diode • ifefeii&JT2 Insulated Type

transistor bc 209 npn

Abstract: transistor bc 207 npn transistor BC 209 TRANSISTOR BC 208 bc 301 transistor transistor darlington 800v transistor bc 207 TRANSISTOR BC 206 IC-5V-54B2 KSD1693
Contextual Info: ¡ SAMSUNG S EMIC ONDUCT OR INC KSD1692 14E | 7^4142 00071,31 4 | NPN SILICON DARLINGTON TRANSISTOR T HIGH DC CURRENT GÀIN LOW COLLECTOR SATURATION VOLTAGE BUILT-IN A DAMPER DIODE AT E-C - 3 3 I , ? TO-126 HIGH POWER DISSIPATION : PT = 1.3W T.=25°C ABSOLUTE MAXIMUM RATINGS <Ta=25°C )

transistor B414

Abstract: 6DI15M-120 transister transisters FREE transisters 5C t transistor T151 CZ 553 5C transistor transistor 08
Contextual Info: 6DI15M-12005A y<r7 - h *7 È ± 'N ° 9 — i. — : Outline Drawings POWER TRANSISTOR MODULE 93 I Features 26.5 12.5 • u • hFE A ^v,' High DC Current Gain 7.5 20 • yyj — —KF*g . • ifefeii&JT2 Insulated Type 1 7.5 16 17.5 / k 1 f E U -S V - EVBW

transistor B414

Abstract: transister 6DI15M-120
Contextual Info: 6DI15M-12005A -'1?r7 — I* È ± 'N ° 9 — — )l* POWER TRANSISTOR MODULE • fë d l: : Features • High Arm Short Circuit Capability • hFE A ^v,' High DC Current Gain • 7 l) — Including F reew heeling Diode Insulated Type : Applications • i/L E K > ' < — 9

a 4514

Abstract: transistor B414
Contextual Info: 6 D I1 5 M - 1 2 0 is a '< * 7 — Y *7 > i * 7 > 9 d . — )\* : Outline Drawings POWER TRANSISTOR MODULE : Features 2G.5 7.5 14 7.5 IJ 7.5 16 • 3SS&ItS*''rSl'<' High Arm Short Circuit Capability • h F E A '^ l' High DC Current Gain 9 — t — K 1*1/ Including Free Wheeling Diode

ka3642

Contextual Info: SAMSUNG ELECTRONICS INC b7E ]> KA3842B/3B/4B/5B • 7 T b m 4 2 D017M0Ô EM7 ■ SMGK LINEAR INTEGRATED CIRCUIT CURRENT-MODE PWM CONTROLLERS The KA3842B/3B/4B/5B are fixe frequency current-mode PWM controller. They are specially designed for Off-Line and DC-to-DC converter applications with minimal.external

samsung flyback pin diagram

Abstract: flyback samsung diagram samsung flyback tv KA2137 k2137 tv flyback samsung diagram samsung tv samsung flyback diagram S6510 flyback samsung
Contextual Info: SAMSUNG S E M I C ON DU CT OR INC Tä ' DE|7%4142 - • - : 0004145 r ^ i - c n LINEAR INTEGRATED CIRCUIT KÄ2137 TV HORIZONTAL PROCESSOR The KA2137 Is a horizontal processor circu it fo r B/W. and color tele­ vision receiver. It Is a m onolithic integrated circu it encapsulated In

Contextual Info: SEMICONDUCTOR L T 104V 3-102 S pecifications April 1995, Rev. 1 CONTENTS PAGE Record of Revision 3 General Description 4 1. Absolute Maximum Rating 5 1-1 Environmental Absolute Ratings 1-2 Electrical Absolute Ratings 2. Optical Characteristics 6 3. Electrical Characteristics

29V040

Contextual Info: PRELIMINARY KM29V040T FLASH MEMORY 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Power Supply • Organization - Memory Cell Array : 512Kx8 - Data Register : 32 x 8 bit • Automatic Program and Erase Typical - Frame Program : 32 Byte in 500us

Contextual Info: KM29N040T Flash ELECTRONICS 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Power Supply The KM29N040T is a 512Kx8bit NAND Flash memory. Its NAND cell structure provides the most cost-effective solution for Digital Audio Recoding. A program

KM29N040T

Abstract: 741 IC data sheet bhrb data sheet IC 741 KM29N04 samsung flash bad block mapping
Contextual Info: KM29N040T ELECTRONICS Flash 512Kx8Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Power Supply The KM29N040T is a 512Kx8bit NAND Flash memory. • Organization - Memory Cell Array - Data Register Its NAND cell structure provides the most cost-effective

Contextual Info: PRELIMINARY KM29V16000AT/R 2Mx8Bit FLASH MEMORY NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 2M +64K bit x 8bit - Data Register : (256 + 8)bit x 8bit • Automatic Program and Erase - Page Program : (256 + 8)Byte

D0241_S4

Contextual Info: KM29N16000ET/R FLASH MEMORY 2M x 8 Bit NAND Flash Memory Extended Temperature Product FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Wide Temperature Operation : -25'C - +85'C • Organization - Memory Cell Array : (2M +64K) x 8 bit - Data Register

L4142

Contextual Info: PRELIMINARY KM29V16000AT/R 2Mx8Bit FLASH MEMORY NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 2M +64K bit x 8bit - Data Register : (256 + 8)bit x 8bit • Automatic Program and Erase - Page Program : (256 + 8)Byte

Contextual Info: FLASH MEMORY KM29N32000T/R 4M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION FEATURES • Single 5.0 - volt Supply • Organization - Memory Cell Array - Data Register The KM29N32000T/R is a 4M 4,194,304 x8 bit NAND Flash memory with a spare 128K(131,072)x8 bit. Its NAND