KSR1108 Search Results

KSR1108

Abstract: KSR2108
Contextual Info: KSR2108 KSR2108 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=47KΩ, R2=22KΩ) • Complement to KSR1108 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Equivalent Circuit

KSR1108

Abstract: KSR2108
Contextual Info: KSR1108 KSR1108 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =47KΩ, R2=22KΩ) • Complement to KSR2108 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit

Contextual Info: KSR2108 KSR2108 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=47KΩ, R2=22KΩ) • Complement to KSR1108 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Equivalent Circuit

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSR1108 SWITCHING APPLICATION Bias Resistor Built In • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias R esistor (R i =A1KQ., R2=22K£i) • C om plem ent to K S R 2108 ABSOLUTE MAXIMUM RATINGS (TA=25°C)

L42 marking transistor

Contextual Info: KSR2108 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In SO T-23 • Switching Circuii, Inverter, interface circuit Driver circuit • Built in bias Resistor (^ = 4 7 X 0 , Rj=22Ki!) • Com plement to KSR1108 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

Contextual Info: KSR1108 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interface circuit Orivdr circuit • Built in bias Resistor (R,=47KQ, R;=22KO) • Complement to KSR2108 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

Contextual Info: KSR1108 KSR1108 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =47KΩ, R2=22KΩ) • Complement to KSR2108 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit

F10M

Contextual Info: KSR2108 KSR2108 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=47KΩ, R2=22KΩ) • Complement to KSR1108 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Equivalent Circuit

KSR1108

Abstract: KSR2108
Contextual Info: KSR2108 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=47KΩ, R2=22KΩ) • Complement to KSR1108 SOT-23 ABSOLUTE MAXIMUM RATINGS (TA=25°°C)

Contextual Info: KSR2108 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In SOT-23 • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor ^ = 4 7 X 1 2 , R2=22Ki2) • Complement to KSR1108 ABSOLUTE MAXIMUM RATINGS (T a=25°C)

KSR1108

Abstract: KSR2108
Contextual Info: SAMSUNG S EM IC O N D U C TO R INC I KSR2108 PNP EPITAXIAL SILICO N TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In T - 3 T I3 • Switching Circuit, Inverter, Interface circuit Driver circuit • Bullt In bias Resistor (R,=47KQ; Ra=22KO) • Complement to KSR1108

KSR1108

Abstract: KSR2108
Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KSR1108 SWITCHING APPLICATION B ias R esistor Built In S O T-23 • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias R esistor (R i =47K£1, R2=22K£1) • C om plem ent to KSR2108 ABSOLUTE MAXIMUM RATINGS (TA=25°C)

Contextual Info: KSR1108 NPN EPITAXIAL SILICON TRAN SISTO R SWITCHINQ APPLICATION Bias Résister Built In SO T-23 • Switching circuit, inverter, interface circuit, Driver Circuit • Built in bias Résister (Ri *47kû, R2»22kû) • Complément to KSR2108 ABSO LU TE MAXIMUM RATINGS (TA=25t:)

Contextual Info: KSR1108 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In SOT-23 • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =47KΩ, R2=22KΩ) • Complement to KSR2108 ABSOLUTE MAXIMUM RATINGS (TA=25°°C)

Contextual Info: KSR1108 KSR1108 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =47KΩ, R2=22KΩ) • Complement to KSR2108 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Equivalent Circuit

KSR1108

Abstract: KSR2108
Contextual Info: KSR2108 KSR2108 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=47KΩ, R2=22KΩ) • Complement to KSR1108 2 1 SOT-23 1. Base 2. Emitter 3. Collector Equivalent Circuit

KSR1108

Abstract: KSR2108 Inverter mma 300
Contextual Info: ISAMSUNG SEMIGONDUGTOR INCjT-SS-J 1 4 E | 7^4145 0007053 1 | KSR1108 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In) • Switching Circuit, inverter, Interface circuit Driver circuit • Built In bias Resistor (Rt=47K(l, Ri=22Kfi)

KSR1108

Abstract: KSR2108
Contextual Info: KSR1108 KSR1108 Switching Application Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =47KΩ, R2=22KΩ) • Complement to KSR2108 2 1 SOT-23 1. Base 2. Emitter 3. Collector Equivalent Circuit

transistor 13003 AD

Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v
Contextual Info: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition V ceo lc Vce h FE Condition (c le Vce(sat},VBE(sat)(v) Condition fiÌMHz) (V) (A) (V) !c (mA) (mA)

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

STF12A80

Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Contextual Info: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer

ksd 168

Abstract: KSA 1102 ksd 301 ksp13 601 KSD 105 13003 bd KSR1107 SA1142 13003 sd KSC5027
Contextual Info: ALPHANUMERIC INDEX 1. KSA Series Device KSA473 KSA539 KSA542 KSA614 KSA642 KSA643 KSA708 KSA709 KSA733 KSA812 KSA910 KSA916 KSA928 KSA931 KSA940 KSA954 KSA992 KSA1010 KSA1013 KSA1015 K SA 1142 KSA1150 KSA1156 KSA1174 KSA1175 KSA1182 KSA1201 KSA1203 KSA1220

transistor SMD s72

Abstract: nec mys 501 MYS 99 transistor 8BB smd st MYS 99 102 kvp 81A kvp 81A DIODE Kvp 69A kvp 86a smd transistor A7p
Contextual Info: ВВЕДЕНИЕ Впервые, сделана столь масштабная попытка, разобраться с маркировкой компонентов поверхностного монтажа SMD . Конечно, книга не является панацеей, но на взгляд авторов должна существенно помочь в той

KSR1010

Abstract: FJN3303R ksr2102 KSR2105 FJV4103R FJV3101R FJV3109R FJV3110R ksr1002 FJV3113R
Contextual Info: Discrete Small Signal Digital Products VCEO V VCBO (V) IC R1 R2 hFE Max (A) (Kohm) (Kohm) Min Max VEBO (V) Saturation Voltage @VCE (V) @IC (mA) VCE (sat) (V) @IC (mA) @IB (mA) SOT-23 NPN Configuration FJV3109R 40 40 5 0.1 4.7 - 100 600 5 1 0.3 10 1 KSR1109