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    D02S1 Search Results

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    D02S1 Price and Stock

    Samtec Inc

    Samtec Inc IDSD-02-S-10.00-T-G-RW

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    Sager IDSD-02-S-10.00-T-G-RW
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    Samtec Inc IDSD-02-S-11.00-ST2

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    Samtec Inc IDSD-02-S-13.00-G-ST8-RW

    Cable Assembly Ribbon 0.33m 4 POS IDC RCP
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    Samtec Inc IDSD-02-S-13.04

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    Samtec Inc IDSD-02-S-15.75

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    Master Electronics IDSD-02-S-15.75
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    D02S1 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: 37E D 430SE71 HARRIS D02S17D SEMICOND G B HAS^igh-Reliabmiy High-Speed C M O S Logic ICs SECTOR CD54HC373/3A CD54HCT373/3A Octal Transparent Latch, 3-State ‘¡P&-G7-/I . T he R C A CD 54H C373 and CD 54 H C T 3 7 3 are high speed Octal Transparent Latches m anufactured with silico n gate


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    430se71d02s17dcd54hc373/3acd54hct373/3a+254ls373cod54hct374/3a PDF

    Contextual Info: Or, Call Customer S e m e at 1-S00-548-6132 USA Only • PROCESS CONTROL • INTERNAL SENSE RESISTORS • INDUSTRIAL CONTROL • PRECISION 10V REFERENCE • FACTORY AUTOMATION • BUILT-IN LEVEL-SHIFTING • DATA ACQUISITION • ±40V COMMON-MODE INPUT RANGE


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    1-s00-548-6132rcv4204-20mab-014+24-20ma0-20ma/0-5v PDF

    MARKING SA transistor

    Abstract: marking code ER transistor KST1623L6
    Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KST1623L3/L4/L5/L6/L7 AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Rating Symbol Unit Collector-Base Voltage VcBO 50 V Collector-Emitter Voltage VcEO 40 V Emitter-Base Voltage V ebo 5 .0 V Collector Current


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    kst1623l3/l4/l5/l6/l7d02s10smarking sa transistormarking code er transistor+1kst1623l6 PDF

    LB 1639 1 L0

    Abstract: Transistor MJE 5331 MT 7930 UBB301 transistor BF 697 bf 0252 MRC039 Philips FA 291 BFQ67W DDZ5068
    Contextual Info: ok ,i . Philips Sem iconductors • bb53T31 D025DB4 36b « A P X AflER P H I L I P S / D I S C R E T E Product specification b?E D NPN 8 GHz wideband transistor FEATURES • BFQ67W PIN CONFIGURATION PINNING PIN High power gain DESCRIPTION • Low noise figure


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    bb53t31d025db4bfq67wot323+10mbcs70lb 1639 1 l0transistor mje 5331mt 7930ubb301transistor bf 697bf 0252mrc039philips fa 291ddz5068 PDF

    A23 1101-01

    Abstract: tc8831 TR 610s
    Contextual Info: je^JD^75M1 D0S5Dfc,4 T O S H IB A 1. • T0S3 UC/UP T C 8831F -1 bME J> v GENERAL The TC8831F is a single chip CMOS LSI for voice recording / play-back using the ADM ( Adaptive Delta Modulation ), It composes a voice recording system with a dynamic RAM for voice memory and


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    8831ftc8831f1724cqd2513+8tc8831f-67tc8831f-68qfp60-p-1414a25maxtc8831f-69iia23 1101-01tc8831tr 610s PDF

    Contextual Info: SS8050 NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • Complimentary to SS8550 • Collector Current lc =1.SA • Collector Dissipation PC=2W Tc =25 C ABSOLUTE MAXIMUM RATINGS (Ta=25°C ) Ch a ra cteristic


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    ss8050ss8550b4142d02s1 PDF

    Contextual Info: w t GEC PLESSEY S F M I I O N D L <_ I O ADVANCE INFORMATION K S» SP5070 2.4GHz FIXED MODULUS FREQUENCY SYNTHESISER The SP5070 is a single modulus frequency synthesiser for use in Satellite TV receivers and together with an appropriate voltage controlled oscillator VCO , forms a


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    sp5070sp5060/sp50621024mhz37bfl522+1d02s135 PDF

    Contextual Info: TOSHIBA LOGIC/NEMORY 4ÔE ]) ^0^7240 iilÖ fx a ) DG221S2 7 •T0S2 r i i P f L ^ Ä ö ^ ö K 1 R S Ü 1 n i P L - i a j F i L — ii( 'V q k 'V b - s < { 131,072 W O R D S x 8 BIT STATIC R A M DESCRIPTIO N The TC 551001PL/FL is 1,048,576 bits static random access memory organized as 131,072 words by 8


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    dg221s2551001pl/fl85/100ns551001p+5tc55100185l/pltc551001fl85l/fldip32 PDF

    Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET S8835 Power GaAs FETs Packaged Features • High power - P 1dB = 24 dBm at f = 8 GHz • High gain - G-,dB = 8 dB at f = 8 GHz • Suitable for C-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)


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    s8835d02s177js8911-as PDF

    Contextual Info: KSP17 NPN EPITAXIAL SILICON TRANSISTOR CATV TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Collector-Base Voltage VcBO Collector-Emitter Voltage VcEO Emitter-Base Voltage V ebo Collector Dissipation (Ta= 25°C) Pc Derate above 25 °C


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    ksp1710omhz-10-id02s1ui PDF

    BSS44

    Abstract: BSS46
    Contextual Info: TiioôEb o o s s m a b « MIE D PHILIPS INTERNATIONAL phin r -3T Philips Sem iconductors Preliminary specification QUICK REFERENCE DATA DESCRIPTION The BSS44 and BSS46 are pnp Silicon planar epitaxial transistors in a TO-39 metal envelope. They are Intended for use In switching


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    00e5140bss44/bss46bss44bss46+1pinning-to-39 PDF

    Contextual Info: P1480 LAN CAM CHAPTER 1 INTRODUCTION 1.1 GENERAL DESCRIPTION The P1480 LAN CAM is a 1K x 64-bit Content-addressable Memory CAM which is targeted at address filtering applications in Local Area Network (LAN) Bridges. Although some of the aspects of this device are tuned specifically to


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    p148064-bit16-bit37bflsse PDF

    Contextual Info: G E SOLID STATE 17E D • 3ô750fll Q0E5105 3 ■ High-Rellabllity CMOS LSI CDP1824/3, CDP1824C/3 High-Reliability CMOS 32-Word x 8-Bit Static Random-Access Memory Featu res: ■ A ccess time:


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    750fllq0e5105cdp1824/3cdp1824c/3+532-wordp1824/3cdp1824c92cs-z7s9iricdp1824 PDF