551001P Search Results

Contextual Info: • S iili* « 131,072 WORDS X 8 BIT STATIC RAM DESCRIPTION The T C 551001PL /FL is 1,048,576 bits static random access memory organized as 131,072 words by 8 bits using CMOS technology, and operated a single 5V power supply. Advanced circuit techniques provide both high speed and low power features w ith an operating cu rren t of 5mA/MHz Typ. and

Contextual Info: TOSHIBA LOGIC/NEMORY 4ÔE ]) ^0^7240 iilÖ fx a ) DG221S2 7 •T0S2 r i i P f L ^ Ä ö ^ ö K 1 R S Ü 1 n i P L - i a j F i L — ii( 'V q k 'V b - s < { 131,072 W O R D S x 8 BIT STATIC R A M DESCRIPTIO N The TC 551001PL/FL is 1,048,576 bits static random access memory organized as 131,072 words by 8

Contextual Info: 131,072 W ORD S x 8 BIT STATIC RAM DESCRIPTION T h e T C 5 5 1 0 0 1 P L /F L is 1,0 4 8 ,5 7 6 b its s ta tic ra n d o m access m e m o ry o rg a n iz e d a s 131 ,0 7 2 w o rd s b y 8 b its u s in g C M O S te ch n o lo g y , a n d o p e ra te d a s in g le 5 V p o w er su p p ly .

TC551001PL-10

Abstract: PL-1U TC551001PL-70 TC5KI001 TC551001FL-70 TC551001 TC551001PL-85 TC55100 tc551001pl
Contextual Info: TOSHIBA {LOGIC/MEMORY} IME D “L cî o c] 7 a 4 f l D o n s m 2 TOSHIBA NIOS MEMORY PRODUCTS ^ 551001PL-70/PL-85/PL-10 TC551001FL-70/FL-85/FL-10 Id e s c r i p t i o n I The 551001PL/FL is 1,048,576 bits static random access memory organized as 131,072 words by 8 bits using CMOS technology, and operated a

Contextual Info: TOSHIBA 4ÖE LOGIC/MEMORY D ^0=17240 GOEElbS T ' Ï Ï O a S Íj{QX0)1J IH í “ IT0S5Í 11 !!. l j C ^ i ) 1 j (QXö)if I H j = - iK öjL. _ 131,072 WORDS x 8 BIT STATIC RAM PRELIMINARY DESCRIPTION The T C 5 5 1 0 0 1 P I/F I is 1,048,576 bits static random access memory organized as 131,072 words by 8