TRANSISTOR B 103 Search Results

Contextual Info: Philips Semiconductors b b S 3 ^31 0055^55 577 M IN AMER PHILIPS/DISCRETE APX Product specification b 7 E l - NPN general purpose transistor FEATURES PMSS3904 PIN CONFIGURATION • S-mini package. DESCRIPTION NPN transistor in a plastic SOT323

transistor k 4213 m

Abstract: transistor BJ 102 transistor k 4213 TRANSISTOR BJ 101 b206a KT-52
Contextual Info: 72 94621 POWEREX INC Tfl » F | 7 B cm b 2 1 m/vatex 3 | " D 'Ti S3-J5' KT521203 Powerex, Inc., Hlllts S treet, Yourtgwood, Pennsylvania 15697 412 925-7272 Split-Dual Darlington Transistor Module 30 Am peres/1200 Volts Description Powerex.Spiit-Dual Darlington Transistor

transistor S8050

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD S8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR  DESCRIPTION The UTC S8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD S8550 PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR  DESCRIPTION The UTC S8550 is a low voltage high current small signal PNP transistor, designed for Class B push-pull audio amplifier and general purpose applications.

Contextual Info: ObE D N AUER PHILIPS/DISCRETE PowerMOS transistor • b b S S ^ l 001475=1 T BUZ326 T -3^-/3; May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

HE8550

Abstract: he8050
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD HE8550 PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR „ DESCRIPTION The UTC HE8550 is a low voltage high current small signal PNP transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose applications.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD HE8550 PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR 3 1 2 SOT-89 1 SOT-23 DESCRIPTION The UTC HE8550 is a low voltage high current small signal PNP transistor, designed for Class B push-pull 2W audio amplifier for

emitter

Abstract: zo 103 ma Q62901-B17-B AUY18 transistor 7g legiert
Contextual Info: PN P-Transistor für Schalteranw endungen bis 8 A A U Y 18 A U Y 18 ist ein legierter PNP-Germanium-Transistor mit Gehäuse 8 A 3 DIN 41878 T O -8 . Der Kollektor ist mit dem Gehäuse elektrisch verbunden. Für die Befestigung auf einem Chassis sind die Isolierteile bzw. Befestigungsteile Q 62910B 13-B , Q 62901-B 17-A und Q 62901-B 17-B vorgesehen. Diese sind zusätzlich zu bestellen.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD HE8551 PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR 1 „ TO-92 DESCRIPTION The UTC HE8551 is a low voltage high current small signal PNP transistor, designed for Class B push-pull 2W audio amplifier for portable radio and general purpose applications.

Contextual Info: N AUER PHILIPS/DISCRETE b'lE » bbSa'ni QQS^bHl OHS BLX95 IAPX A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r transmitting applications in class-A, B or C in the u.h.f. frequency range fo r supply voltages up to 28 V. The transistor is resistance stabilized and is

KD621K20

Contextual Info: m ß /B S K KD621K20 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Dual Darlington Transistor Module 200 Amperes/1000 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use

102 TRANSISTOR

Abstract: Z2E diode KD224503 K0224503
Contextual Info: K M B S r KD224503 Powerex, Inc., 200 H illis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Dual Darlington Transistor Module 30 Amperes/600 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use

DIODE D29 -08

Abstract: diode D32 D-30 D-32 KD224575 DIODE D29
Contextual Info: f B M o m r KD224575 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Dual Darlington Transistor Module 75 Amperes/600 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use

42t sot-23

Abstract: BCX716 BCD Schalter TFK BB transistor BC 458 BCX 458 TFK AF tfk s 154 p am/M29F002BB(45/55/70/90/TC5117800ANJ/BCX716 tfk 715
Contextual Info: l Ü F Gestempeltmit: BCW61ABCW61B BCW61C BCW61D BCX716 BCX71H BCX71J BCX71K Q O lli C l M a rk e d w ith : B» BB IC BD BO BH BJ BK D uW U l DPV11 * B l» A / I Silizium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar AF Transistor Anwendungen: Vorstufen und Schalter in Dick- und Dünnfilmschaltungen

transistor s49

Abstract: KS624530 powerex ks62
Contextual Info: m H B XX KS624530 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Single Darlington Transistor Module 300 Amperes/600 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power devices designed for use in

s3331

Contextual Info: Hi bbSBTBl 0031SSD flM7 M A P X Philips S em iconductors Product specification NPN 12 GHz wideband transistor BFQ33C N AMER PHILIPS/DISCRETE DESCRIPTION b^E T> PINNING NPN transistor in hermetically-sealed, sub-miniature, SOT173 and SOT 173X micro-stripline envelopes, primarily

Contextual Info: Philips Sem iconductors b b S 3T 31 OOBT^SB SOT M APX Product specification VH F power MOS transistor BLF245 N AUER PHILIPS/DISCRETE FEATURES b=1E D PIN CONFIGURATION • High power gain • Low noise figure • Easy power control • Good thermal stability

BLY88A

Abstract: A41E BLY88 W1032 Paver Components
Contextual Info: PHILIPS INTERNATIONAL MAINTENANCE TYPE 41E D • TllGÔSb DQSTRS? 1 « P H IN II BLY88A A T - 3 3 - 0 1 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage of 13,5 V. The transistor is resistance stabilized and is

diode b24a

Abstract: diode v3e Mitsubishi transistor QM600H
Contextual Info: MITSUBISHI TRANSISTOR MODULES f QM600HD-M HIGH POWER SWITCHING USE NON-INSULATED TYPE APPLICATION Robotics, Forklifts, W elders OUTLINE DRAWING 8t CIRCUIT DIAGRAM Dimensions in mm 9e B°-r—C - V 'A - — wE O Ô BX M4 2 - 210 OE | S MITSUBISHI TRANSISTOR MODULES

cq 636 g transistor

Contextual Info: bbsa'oi Philips Semiconductors goeses^ n s • APX N AMER PHILIPS/D ISCR ETE NPN 3 GHz wideband transistor b?E Product specification D ^ BFS17A PINNING DESCRIPTION NPN transistor in a plastic SOT23 envelope. PIN It is intended for a wide range of RF applications such as TV tuners.

Contextual Info: 0035104 TT 4 W A P X N A*ER PlJILIPS/DISCRETE PNP 5 GHz wideband transistor b?E D ^53131 Philips Semiconductors DESCRIPTION Product specification e BFQ149 PINNING PNP transistor in a SOT89 envelope. It is intended for use in UHF applications such as broadband aerial amplifiers

2SC5408

Abstract: 2SC5408-T1 p1209
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5408 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURE PACKAGE DIMENSIONS in mm • High fT 17 GHz TYP. 2.1±0.1 • High gain C E E E B PACKING STYLE 0.15 +0.1 –0 8-mm wide emboss taping, 6-pin

KS524505

Abstract: bsk 45 KS52 S-10 S-11 S-12 D 1437 transistor s10 45 412 AU LSS1
Contextual Info: m ß /B S KS524505 K Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S ÍH Q IG D s r H n Q t O t l Transistor Module 50 Amperes/600 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power

102 TRANSISTOR

Abstract: KD221 KD221K03 VC80 X1000
Contextual Info: m M B E X KD221K03 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 D U d l D d r lin Q t O H Transistor Module 30 Amperes/1000 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use