CECC50 Search Results

IN829A

Abstract: 55C3V3 55C2V7 IN827a 85C3V3 IN4575A IN4569A IN4578 IN4579 IN939
Contextual Info: THO M SO N MIL ET S P A T I A U X SSE D • T G E b 6 7 2 0 0 0 0 4 6 b 3 7 e « T H C M DISCRETE COMPONENTS PRODUCT DESCRIPTION O o S According CECC500 According t ESA/SCC5C o <z> PACKAGE ZENER DIODES BZX 55C2V7 to BZX 55C3VO BZX 55C3V3 to BZX 55C91 BZX 85C2V7

2N2484

Abstract: CECC50002-129 J 2N2484
Contextual Info: 2N2484 LOW-LEVEL, LOW-NOISE AMPLIFIERS DESCRIPTION The 2N2484 is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is designed for use in high-performance, low-noise amplifier circuits from audio to high-frequency. Products approved to CECC50002-129 available on request.

bzx55

Contextual Info: N AMER PHILIPS/DISCRETE b 'lE D m J ^53*131 002bflQ2 M'IS * A P X _ bZ X 55 SERIES VOLTAGE REGULATOR DIODES Silicon planar diodes in a DO-35 envelope intended for use as low-voltage stabilizers or voltage references. The series covers the normalized range of nominal working voltages from 2,4 V to 75 V

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

BUS12

Abstract: BUS12A max 1988 TO3 philips
Contextual Info: N AMER PHI L I P S / D I S C R E T E b t ^ T B l 0010717 JU i l l 3 • BUS12 BUS12A SSE D I T - 3 3 - / J SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn pow er transistors in a TO -3 envelope, intended for use in converters, inverters, switching regulators, m otor control systems etc.

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

6822 TRANSISTOR equivalent

Abstract: transistor T009 transistor W1A 93 TRANSISTOR NPN 6822 TRANSISTOR 434 transistor w1a 84 w1a 02 transistor transistors 6822 CECC50000 cecc00200
Contextual Info: BRITISH STAND ARD S INSTITUTION 2, PARK STREET. LONDON, W1A 2BS BS CECC 50 004-042 Specification available from:— AS SH O W N IN PD 9 0 0 2 , and CECC 0 0 2 0 0 S EM E L A B MANUFACTURING LTD. COVENTRY ROAD. LU T T E R W O R T H , L E I C E S T E R S H I R E .

SS TRANSISTOR

Abstract: BF751 t-31-21
Contextual Info: Product specification Philips Semiconductors NPN 6.5 GHz wideband transistor P H ILIP S IN T E R N A T IO N A L £ BF751 S b E D H 711D A E L . 004M R a bT T OWÊt P H IN PINNING FEATURES DESCRIPTION • High power gain PIN • Low noise figure 1 • Gold metallization ensures

Contextual Info: Philips Semiconductors b b 5 3 c]31 Q0311b7 417 • APX^£liSiJ£U SSSSi£!l NPN 4 GHz wideband transistor £ BFG34 N AflER PHILIPS/DISCRETE DESCRIPTION b^E » PINNING NPN transistor in a four-lead dual-emitter plastic SOU 03 envelope. It is designed for wideband

c3v6

Contextual Info: B ZX 55 SERIES J V VOLTAGE REGULATOR DIODES Silicon planar diodes in a DO-35 envelope intended for use as low-voltage stabilizers or voltage references. The series covers the normalized range o f nominal working voltages from 2,4 V to 75 V with a tolerance of ± 5% international standard E24 .

Contextual Info: 3Q E D Z S G S -T H O M S O N rZ ^ 7# • 7^21537 00313^ 3 ■ ^ ¿ M O , - [fôQD [Rj ô [l[L[lCT[^(Q)ÎMlD(OS_ 2 N 2 4 8 4 S G S-THOMSON LOW-LEVEL, LOW-NOISE AMPLIFIERS DESCRIPTIO N The 2N2484 is a silicon planar epitaxial NPN tran­

JIS-C-7022

Abstract: 2-1-16EIAJAB-6201 ic 353 JIS-C-7032 OKI g3 gs lead free EIAJ ED-4701 305 6201 xr MOS1-4-14 CCD MTBF JIS-C-7021
Contextual Info: J2S0001-27-Y4 作成：1998年 1月 前回作成：1996年 10月 まえがき 平素は沖半導体製品を御愛顧いただき、厚く御礼申し上げます。 急速な発展を遂げているエレクトロニクス産業におきまして、半導体製品の応用

CECC50 005

Abstract: CECC50 005-005 BZX55 CECC50 005 005 c2v4 c2v7 c47 surge c3v3
Contextual Info: N AMER PHILIPS/DISCRETE _ bTE D • J bbSB'lBl 002bflQ2 4^S ■ APX bZX55 SERIES VOLTAGE REGULATOR DIODES Silicon planar diodes in a DO-35 envelope intended for use as low-voltage stabilizers or voltage references. The series covers the normalized range of nominal working voltages from 2,4 V to 75 V

BSX19 equivalent

Abstract: BC350 bc107 BFW63 bcw17 SHORT DATA ON 2N744 transistor BC287 2N3020 BC451 2N2868
Contextual Info: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX PRODUCT GUIDE SELECTION GUIDE CROSS REFERENCE HANDLING PRECAUTION QUALITY SURFACE MOUNTING CASE: SOT-23 DATASHEETS PACKAGES Page 4 5 7 9 14 24 25 30 35 419 INTRODUCTION This databook contains datasheets covering the range of discrete devices for small

CECC50002-129

Abstract: 2N2484
Contextual Info: SGS-THOMSON R!tlD EæilLI(g'iri iD(SS 2N2484 LOW-LEVEL, LOW -NOISE AMPLIFIERS D E S C R IP T IO N The 2N2484 is a silicon planar epitaxial NPN tran­ sistor in Jedec TO-18 metal case. It is designed for use in high-performance, low-noise amplifier circuits

Contextual Info: N AUER PHILIPS/DISCRETE hfaSB^l 0Q1A717 3 • 2SE D BUS12 BUS12A SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO-3 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc.

Contextual Info: TVS Module Screening TEL: 805-498-2111 Semtech has DESC-EQT laboratory suitability status for performance of qualification, quality conformance, and screen testing of semiconductors products. Semtech maintains total in-house capabilities to support testing

Mullard Mullard quick reference guide

Abstract: CV7476 CV7143 CV8805 BZV46 CV 7476 mullard CV7099 CV7100 diode mullard germanium BYW 64 bridge rectifier
Contextual Info: The Mullard Technical Handbook i t made up of four sets of Books, each comprising several parts:Book 1 light blue Sem iconductor Devices Book 2 (orange) Valves and Tubes Book 3 (green) Com ponents, M aterials and Assem blies Book 4 (purple or dark blue)

TELEVISION EHT TRANSFORMERS

Abstract: BYW96E PH smd code Z9P germanium transistor BY527 EQUIVALENT BYD33D BAX12 BB212 BB515 BBY31
Contextual Info: Philips Semiconductors Diodes Contents page SELECTION GUIDE Small-signal diodes 5 Tuner diodes 7 FM detection diodes 8 Low leakage diodes 8 Schottky barrier switching diodes 9 Stabistors Voltage regulators 9 10 Voltage reference diodes 11 Transient suppressor diodes

C6V2 ST

Abstract: ST C6V8 C5V1 ST BZV85 c5v6 st C9V1 ST ScansUX7 C4V3 ST IEC134 C4V7 ST
Contextual Info: SbE D • 711QöBti O Q H O ? 6^ P H I LI P S I N T E R N A T I O N A L 12Ö M P H I N BZV85 SERIES SbE D VOLTAGE REGULATOR DIODES Silicon planar voltage regulator diodes in hermetically sealed DO-41 glass envelopes intended for stabilization purposes. The series covers the normalized E24 ± 5% range of nominal working voltages

BF967

Abstract: 60J2
Contextual Info: BF967, N AMER PHILIPS/DISCRETE ObE D • 1^53^31 0015356 b r-3iHC SiLICON PLANAR TRANSISTOR P-N-P transistor in a plastic T-package, primarily intended for application as gain controlled preamplifier in u.h.f. television tuners. QUICK REFERENCE DATA Collector-base voltage open emitter