TRANSISTOR AMD Search Results

q001

Abstract: DDDD234 1BW TRANSISTOR FF200 TRANSISTOR BL 123 bdu 9 j
Contextual Info: 7 -3 < h 3 l FF 200 R 06 KL SSE EUPEC Transistor D • aMDaST? Thermische Eigenschaften Transistor RthJC Elektrische Eigenschaften Electrical properties Höchstzulässiae W erte Maximum rated values 600 V 200 A RthCK V ces le DDDD234 774 «UPEC Thermal properties

Contextual Info: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor

Contextual Info: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor

2N3904

Abstract: LM96163 LM96163C LM96163CISD LM96163CISDX QFN10 RLs6
Contextual Info: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

RTU620

Contextual Info: LM96163 LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology Literature Number: SNAS433C LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm® BJT Transistor Beta

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

TRANSISTOR C 6090

Abstract: TRANSISTOR C 6090 npn 2N5090 E200C LC 7621 fh15
Contextual Info: 2 N 5090 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN SILIC IU M , PLANAR EPITAXIAL UHF-VHF amplifier, frequency multiplier or oscillator Amplificateur, multiplicateur de fréquenceou oscillateur VHF-UHF v CEO 30 V 'c 0,4 A ^ 2 1 E ^ mA 10 - 200

312oc

Abstract: mjf*8004 MJF18004 transistor mjf18004 221A-06 221D MJE18004 2C230
Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet SWITCHMODE™ MJE18004* M JF18004* NPN Bipolar Power Transistor For Switching Power Supply Applications ‘Motorola Preferred Dovlc* POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS The MJE/MJF18004 have an applications specific state-of-the-art die designed

BUL148

Abstract: NH 20AB transistor Ic3A NPN bipolar power transistor BUL14GF iQ30 221A-06 221D BUL146 RF POWER TRANSISTOR NPN, motorola
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet B UL146* BUL146F* SWITCHMODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications ‘Motorola Preferred Device POWER TRANSISTOR 6.0 AMPERES 700 VOLTS 40 and 100 WATTS The BUL146/BUL146F have an applications specific state-of-the-art die designed

Contextual Info: Q 0 E S 3 C1S TOM • APX ^53^31 Philips Semiconductors N AUER PHILIPS / D I S CR E T E b?E Product specification J> PNP 5 GHz wideband transistor DESCRIPTION £ BFT93 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF

2n 914

Abstract: transistor 914 NPN transistor SST 117 2N914 914 transistor
Contextual Info: *2N 914 NPN SILICON TRANSISTOR, EPITAXIAL TRANSISTOR NPN SILIC IU M , E P ITAXIAL Preferred device D isp o sitif recommandé • Low current fast switching Commutation rapide faible courant Maximum power dissipation V CEO 15 V h ji^ d O mA 3 0 -1 2 0 fT 300 MHz min.

MTPBP10

Abstract: UL-44 l44 transistor transistor L44
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet B U L44 * BU L44F* SWITCHMODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications •Motorola Pf*f*cr#d Dtvtc* POWER TRANSISTOR 2.0 AMPERES 700 VOLTS 40 and 100 WATTS The BUL44/BUL44F have an applications specific state-of-the-art die designed

BFR38

Abstract: 639 TRANSISTOR PNP BFR 38
Contextual Info: BFR 38 PNP SILICON TRANSISTOR, EPITA X IA L PLANAR TRANSISTOR PNP SILICIUM, PLANAR EPITAXIAL - T V aerial amplifiers Amplificateurs d'antenne TV V CEO -3 5 V *C - 2 0 mA h 2 ig —3 mA 25 min. fx (—3 mA) 700 MHz min. Case TO-72 — See outline drawing CB-4 on last pages

L147F

Abstract: mo9t Transistor 3-347 UL147F 3-347 transistor ADE 450
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet B U M 47* BUL147F* SWITCHMODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications *Moton>la Pr*f«rr*d D *vic* POWER TRANSISTOR 8.0 AMPERES 700 VOLTS 45 and 125 WATTS The BUL147/BUL147F have an applications specific state-of-the-art die designed

VK200 ferrite choke

Abstract: MRF5176 choke vk200 vk200 transistor 3906 vitramon vk200 choke VK200 r.f choke
Contextual Info: MRF5176 silicon The RF Line 15 W - 400 MHz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON . . . designed prim arily for wideband large-signal driver and predriver am plifier stages in the 200 *6 00 M H z frequency range. • Specified 28 V o lt, 4 0 0 M H z Characteristics O utp ut Power = 1 5 Watts

2N2243

Abstract: h21E 2243A U25c 2243 1/loctite 2243
Contextual Info: 2N 2243,A NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN S IL IC IU M , PLA N A R E P IT A X IA L - H F amplification A m plifica tio n HF - Switching Commutation v CBO 120 V h 21E ^^0 mA 40 -12 0 v CEsat 150 mA/15 mA) 0,25 V max 2N 2243 A 0,35 V max 2N 2243

part number decoder toshiba dram

Abstract: MOSYS eDRAM LG concurrent RDRAM "embedded dram" nec ibm edram samsung dram sldram MoSys sram embedded mosys rdram samsung cdram
Contextual Info: Systems in Silicon Designing with DRAM AMD Embedded Processor Division, Designing with DRAM Overview Designing with DRAM Agenda Systems in Silicon • What are DRAMs? – The transistor level – How they differ from SRAM and FLASH • Bus Cycle Review – 16-bit

BF 182 transistor

Abstract: TRANSISTOR Bf 522 BF182 bf 182 CI 182 Y11E transistor A11A
Contextual Info: B F 182 NPN S IL IC O N T R A N S IS T O R , E P IT A X IA L P LA N A R TRANSISTOR NPN SILIC IU M , PLA N A R E P IT A X IA L The NPN planar epitaxial transistor BF 182 is intended for use in V H F converter stages of television receivers and generally for'all U H FV H F uses.

Contextual Info: N E C E L EC T RO NI C S INC 3QE D • b4E7S2S 0 0 2 ^ 4 0 fl ■ 3 PHOTO COUPLER PS2021 PHOTO C O U P LER High Isolation Voltage Single Transistor — n ep o c s e r ie s — D E S C R IP T IO N The PS2021 is an optically coupled isolator containing a G aAs light emitting diode and an NPN silicon photo transistor.

transistor model list

Abstract: H7CX-A11S-N preset contact counter H7CX-R11D1-N H7CX-AU-N omron counter M079-E1 Y92S-29 Digital Pulse Counter - Two Digit Omron h7cx-awd1-n
Contextual Info: Ordering Information List of Models Type Classification External connections Configuration Display digits Settings Power supply voltage Output Contact output SPDT 4 digits Transistor output (SPST) Contact output (SPDT) 11-pin socket Contact output (SPDT)

Transistor 638 MOTOROLA

Abstract: 2N6056 MOTOROLA DIODE 851 MOTOROLA eisc REF2667
Contextual Info: M OTOROLA Order this document by 2N6056/D SEMICONDUCTOR TECHNICAL DATA 2N6056 NPN Darlington S ilicon Power Transistor Motorola Preferred Device . . . designed for general-purpose amplifier and low frequency switching applications. DARLINGTON 8 AMPERE SILICON

MRF476

Contextual Info: I MOTOROLA SC XSTRS/R F 4bE D • b3b7ES4 O O ^ b ä ä 2 ■ PIOTb MOTOROLA m SEMICONDUCTOR I TECHNICAL DATA MRF476 The R F L in e 3 .0 W (P E P I- 3 .0 W (CW ) - 3 0 M H z RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN S IL IC O N . . . des ig n e d p rim a rily fo r use in sin g le s id eb an d lin e a r a m p lifie r

transistor C2075

Abstract: g10 smd transistor SMD Transistor 1c
Contextual Info: âUALITY TEC HN OLO GIES CORP QUALITY TECHNOLOGIES 27E D 74bbasi 0003443 VDE APPROVED TRANSISTOR OUTPUT OPTOCOUPLER H11A1 H11A1Z PACKAGE DIMENSIONS DESCRIPTION The H11A1 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from