U25C Search Results

XC6411

Contextual Info: ◆Low Power Consumption: 0.8µA/ch. TYP. ◆Input Voltage Range : 1.5V ~ 6.0V ◆Output Voltage Range : 0.9V ~ 5.0V (can be set by channel) ◆Maximum Output Current : 200mA (300mA Limit, TYP.) @ VOUT=3.0V, VIN=4.0V ◆Current Limiter Circuit Built-In ◆Ceramic Capacitor Compatible

transistor G11

Abstract: to-126 HIGH SPEED SWITCHING transistor g11 transistor NPN Transistor 10A 400V NPN Transistor 1A 400V to - 92 to-126 npn switching transistor 400v d 772 transistor
Contextual Info: TS13003 High Voltage NPN Transistor TO-92 TO-126 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCEO 400V BVCBO 700V IC 1.5A VCE SAT Features 1V @ IC =0.5A, IB =0.1A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type

Contextual Info: ADS809 ADS 809 www.ti.com 12-Bit, 80MHz Sampling ANALOG-TO-DIGITAL CONVERTER TM FEATURES DESCRIPTION ● DYNAMIC RANGE: SNR: 65dB at 10MHz fIN SFDR: 68dB at 10MHz fIN The ADS809 is a high-dynamic range 12-bit, 80MHz pipelined Analog-to-Digital A/D converter. It includes a

Contextual Info: •APPLICATIONS ◆CMOS 2-Input NAND Gate ◆High Speed Operation : tpd = 2.6ns TYP. ◆Operating Voltage Range : 2V ~ 5.5V ◆Low Power Consumption : 1 A (MAX.) ●Palmtops ■GENERAL DESCRIPTION ■FEATURES The XC74UL00AA is a 2-input CMOS NAND Gate,

MARKING PA TR SOT-23

Abstract: ultra low igss pA
Contextual Info: TSM3408 60V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain 60 Features ID (A) 100 @ VGS = 10V 3.2 130 @ VGS = 4.5V 2.8 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance

Contextual Info: TK15H50C TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOS VI TK15H50C ○ Switching Regulator Applications • Unit: mm Low drain−source ON resistance : RDS (ON) = 0. 33 Ω (typ.) : |Yfs| = 8.5 S (typ.) • High forward transfer admittance

DIODE B12

Contextual Info: TSM4416D 30V Dual N-Channel MOSFET SOP-8 Pin Definition: 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 4. Gate 2 5. Drain 2 PRODUCT SUMMARY VDS V 30 Features RDS(on)(mΩ) ID (A) 15 @ VGS = 10V 11 24 @ VGS = 4.5V 10 Block Diagram ●

Contextual Info: •APPLICATIONS ◆CMOS ◆Highly Accurate :±2% ◆Low Power Consumption :0.7 A VIN=1.5V ●Microprocessor reset circuitry ●Memory battery back-up circuits ●Power-on reset circuits ●Power failure detection ●System battery life and charge voltage monitors

8 pin ic 3773

Abstract: C 5763 transistor
Contextual Info: ◆Low Power Consumption : 25 A TYP. ◆Dropout Voltage : 30mA @ 60mV : 100mA @ 200mV ◆Maximum Output Current : 150mA (300mA=XC6209 E to H Types) ◆Highly Accurate :±2% (±30mV less than 1.5V) ◆Output Voltage Range : 0.9V ~ 6.0V (50mV Increments)

TRANSISTOR 0835

Contextual Info: TSC966 NPN Silicon Planar High Voltage Transistor TO-92 Pin Definition: SOT-223 1. Emitter 2. Collector 3. Base Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO 600V BVCEO 400V IC 300mA VCE SAT Features ● ● Ordering Information High BVceo, BVcbo

TOSHIBA ADDC

Contextual Info: TL19W01-D T32 TOSHIBA LED lamps TL19W01-D(T32 ○ Surface-mount devices Unit: mm 3.1 (L mm x 3.8 (W) mm × 0.65 (H) mm size • High luminous flux LED : 110 lm(typ.) @ IF=300 mA • Color: white (6500K) • Reflow-soldering is available • Applications : general lighting and etc.

Contextual Info: TSM15N03PQ33 30V N-Channel Power MOSFET PDFN33 PRODUCT SUMMARY Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain VDS V 30 Features ● ● ● ● RDS(on)(mΩ) ID (A) 12 @ VGS =10V 7.8 17 @ VGS =4.5V 7 Block Diagram

high Forward Voltage Diode

Abstract: HIGH POWER ANTENNA SWITCH PIN DIODE
Contextual Info: ◆High Power Handling ◆Small Capacitance at Zero Bias, Extremely Small Reverse Bias ◆Small Forward Series Resistance ◆Small Insertion Loss, High Isolation ◆Extremely Small Wave Distortion TX Sprious <-80dBc, RX Intermodulation ≒ -73dBc @ 90dB

Contextual Info: OPA688 OPA 688 OPA 688 For most current data sheet and other product information, visit www.burr-brown.com Unity Gain Stable, Wideband VOLTAGE LIMITING AMPLIFIER TM FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● HIGH LINEARITY NEAR LIMITING

Contextual Info: ◆CMOS Logic Dual Inverter ◆Unbuffered Type ◆High Speed Operation : tpd = 12ns TYP. ◆Operating Voltage Range : 2V ~ 6V ◆Low Power Consumption : 1 A (MAX.) •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XC74UHU04WM is a CMOS dual inverter, manufactured

fr 3910

Contextual Info: TSM190N08 75V N-Channel Power MOSFET TO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source Features ● ● ● ● VDS V RDS(on)(mΩ) ID (A) 75 4.2 @ VGS =10V 190 Block Diagram Advanced Trench Technology Low RDS(ON) 4.2mΩ (Max.) Low gate charge typical @ 160nC (Typ.)

TSM3458

Abstract: sot26 pa N-Channel mosfet sot-26
Contextual Info: TSM3458 60V N-Channel MOSFET SOT-26 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 60 Features ID (A) 100 @ VGS = 10V 3.2 130 @ VGS = 4.5V 2.8 Block Diagram ● Advance Trench Process Technology ●

Contextual Info: TPCP8F01 TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor , Field Effect Transistor Silicon N Channel MOS Type TPCP8F01 Unit: mm ○ Swtching Applications ○ Load Switch Applications 0.33±0.05 0.05 M A • 2.4±0.1 ○ Multi-chip discrete device; built-in PNP Transistor for

NPN Transistor 1A 800V to - 92

Abstract: transistor -25 F07
Contextual Info: TS13003MV High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO 400V BVCBO 800V IC 1.5A VCE SAT Features ● High Voltage ● High Speed Switching 0.8V @ IC / IB = 1A / 0.25A Block Diagram Structure ● Silicon Triple Diffused Type

Contextual Info: ◆CMOS Low Power Consumption ◆Input Frequency : 12kHz to 35MHz ◆Divider Ratio : 1, 3~2047 Divisions Laser Trimming ◆Multiplier Ratio : 6~2047 Multiplications (Laser Trimming) ◆Comparative Frequency : 12kHz~500kHz ◆Output Frequency : 3MHz ~30MHz

Contextual Info: •APPLICATIONS ◆CMOS Schmitt Trigger Inverter ◆High Speed Operation : tpd = 2.3ns TYP. ◆Operating Voltage Range : 2V ~ 5.5V ◆Low Power Consumption : 1 A (MAX.) ●Palmtops ■GENERAL DESCRIPTION ■FEATURES The XC74UL14AA is a CMOS schmitt trigger inverter,

Contextual Info: SSM3J56MFV TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOSⅥ SSM3J56MFV ○ Load Switching Applications • • 1.2 V drive Low ON-resistance:RDS(ON) = 390 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 480 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 660 mΩ (max) (@VGS = -1.8 V)

mosfet 0835

Abstract: TSM05N03
Contextual Info: TSM05N03 Preliminary 30V N-Channel MOSFET SOT-223 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Drain 3. Source 30 Features ID (A) 60 @ VGS =10V 5 90 @ VGS =4.5V 3.8 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance

Contextual Info: ◆CMOS Inverter ◆Unbuffered Type ◆High Speed Operation : tpd = 2.3ns TYP. ◆Operating Voltage Range : 2V ~ 5.5V ◆Low Power Consumption : 1 A (MAX.) •APPLICATIONS ●Crystal oscillators ●Palmtops ●Digital equipment ■GENERAL DESCRIPTION ■FEATURES