TRANSISTOR 80 GHZ Search Results

3 pin transistor 10 amp

Abstract: Radar TRANSISTOR J13 5 pin transistor 3 amp PH1214-80M power transistor 13 w 12 transistor
Contextual Info: Radar Pulsed Power Transistor 80 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty PH1214-80M PH1214-80M Radar Pulsed Power Transistor - 80 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty 1 Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor

VCO 1.4 GHz

Contextual Info: PH3135-80M Radar Pulsed Power Transistor Preliminary 80 Watts, 3.10-3.50 GHz, 100 us Pulse, 10% Duty Features • • • • Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation New Power Dense Interdigitated Geometry

UMIL80

Contextual Info: UMIL 80 80 Watts, 28 Volts, Class AB Defcom 200 - 500 MHz GENERAL DESCRIPTION CASE OUTLINE The UMIL80 is a double input matched COMMON EMITTER broadband transistor specifically intended for use in the 200-500 MHz frequency band. It may be operated in Class AB or C. Gold metallization and silicon diffused

BFG194

Abstract: VPS05163
Contextual Info: BFG 194 PNP Silicon RF Transistor
For low distortion broadband amplifiers in 4 antenna and telecommunication systems up to 1.5 GHz at collector currents from 20 mA to 80 mA 3 2 1 VPS05163 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BF 194 transistor

Abstract: VPS05178 BFP194
Contextual Info: BFP 194 PNP Silicon RF Transistor 3
For low distortion broadband amplifier in antenna and telecommunications systems up 4 to 1.5 GHz at collector currents from 20 mA to 80 mA 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution!

73412

Abstract: NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318
Contextual Info: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency Optimum Noise Figure, Ga dB Noise Figure, NFopt (dB) Gain at Optimum Frequency, f (GHz) Typical Output Power and Gain vs. Frequency NE46134 10 V, 80 mA, PidB - 26.7

Contextual Info: _ _ _ N AUER PHILIPS/DISCRETE _ ! i_ _ OLE I> • 0 8 0 0 1 3 0 AMPEREX, H IC K SVILLE 86D 0 1 80 8 D T-33-05 ^53131 00m04b b | BLX91CB SILICON PUNAR EPITAXIAL TRANSISTOR N-P-N silicon planar epitaxial transistor primarily designed fo r use in fast-switching wide-band video

Contextual Info: BIPOLARICS INC. Part Number BPT23B01-23P SILICON MICROWAVE POWER TRANSISTOR Package 23: 0.230" 2 Lead Pill FEATURES: • P = 1 W @ 2.3 GHz • High Gain out GPE = 8.0 dB @ 2.3 GHz • High Gain Bandwidth Product ft = 6.5 GHz @ IC = 80 mA • High Reliability

BPT23B01-23

Contextual Info: BIPOLARICS INC. Part Number BPT23B01-23 SILICON MICROWAVE POWER TRANSISTOR Package 23: 0.230" 2 Lead Flange FEATURES: • P = 1 W @ 2.3 GHz • High Gain out GPE = 8.0 dB @ 2.3 GHz • High Gain Bandwidth Product ft = 6.5 GHz @ IC = 80 mA • High Reliability

Contextual Info: BIPOLARICS INC. Part Number BPT30B01-23P SILICON MICROWAVE POWER TRANSISTOR Package 23: 0.230" 2 Lead Pill FEATURES: • P = 1 W @ 3.0 GHz • High Gain out GPE = 8.0 dB @ 3.0 GHz • High Gain Bandwidth Product ft = 6.5 GHz @ IC = 80 mA • High Reliability

BPT30B01-23

Contextual Info: BIPOLARICS INC. Part Number BPT30B01-23 SILICON MICROWAVE POWER TRANSISTOR Package 23: 0.230" 2 Lead Flange FEATURES: • P = 1 W @ 3.0 GHz • High Gain out GPE = 8.0 dB @ 3.0 GHz • High Gain Bandwidth Product ft = 6.5 GHz @ IC = 80 mA • High Reliability

dm 0765

Abstract: BFQ196 siemens DM 321 VCE0518I BFQ 244 cerec
Contextual Info: SIEMENS BFQ 196 NPN Silicon RF Transistor Prelim inary Data • For low-noise, low-distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA. 3 J • f t = 7.5 GHz F = 1.3 dB at 900 MHz

Contextual Info: BFP196 NPN Silicon RF Transistor 3
For low noise, low distortion broadband amplifiers in antenna and telecommunications 4 systems up to 1.5 GHz at collector currents from 20 mA to 80 mA 2
Power amplifier for DECT and PCN systems
fT = 7.5 GHz 1 VPS05178

Contextual Info: BFP196 NPN Silicon RF Transistor 3
For low noise, low distortion broadband amplifiers in antenna and telecommunications 4 systems up to 1.5 GHz at collector currents from 20 mA to 80 mA 2
Power amplifier for DECT and PCN systems
fT = 7.5 GHz 1 VPS05178

BFP196

Abstract: VPS05178
Contextual Info: BFP196 NPN Silicon RF Transistor 3
For low noise, low distortion broadband amplifiers in antenna and telecommunications 4 systems up to 1.5 GHz at collector currents from 20 mA to 80 mA 2
Power amplifier for DECT and PCN systems
fT = 7.5 GHz 1 VPS05178

Contextual Info: BFG196 NPN Silicon RF Transistor
For low noise, low distortion broadband 4 amplifiers in antenna and telecommunication systems up to 1.5 GHz at collector currents from 20 mA to 80 mA 3
Power amplifier for DECT and PCN Systems 2
fT = 7.5 GHz 1 VPS05163

BMT0912B80-40

Abstract: amplifier TRANSISTOR 12 GHZ transistor military
Contextual Info: BIPOLARICS INC. Part Number BMT0912B80-40 SILICON MICROWAVE POWER TRANSISTOR Package 40: 0.400” x 0.400” 2 Lead Flange FEATURES: • P = 80 W @ 0.9 - 1.2 GHz • High Gain out GPE = 7.5 dB to 8.2 dB • High Gain Bandwidth Product ft = 6.5 GHz @ IC = 4.6 A

bf 194 pin configuration

Abstract: Transistor BFR 35 BFr pnp transistor
Contextual Info: BFR 194 PNP Silicon RF Transistor 3
For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA 2
Complementary type: BFR 106 NPN 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution!

transistor bfp 196

Abstract: transistor bf 196 VPS05178
Contextual Info: BFP 196 NPN Silicon RF Transistor 3
For low noise, low distortion broadband amplifiers in antenna and telecommunications 4 systems up to 1.5 GHz at collector currents from 20 mA to 80 mA 2
Power amplifier for DECT and PCN systems
fT = 7.5 GHz 1 VPS05178

BFP196

Contextual Info: BFP196 NPN Silicon RF Transistor 3
For low noise, low distortion broadband amplifiers in antenna and telecommunications 4 systems up to 1.5 GHz at collector currents from 20 mA to 80 mA 2
Power amplifier for DECT and PCN systems
fT = 7.5 GHz 1 VPS05178

Contextual Info: BFG196 NPN Silicon RF Transistor
For low noise, low distortion broadband 4 amplifiers in antenna and telecommunication systems up to 1.5 GHz at collector currents from 20 mA to 80 mA 3
Power amplifier for DECT and PCN Systems 2
fT = 7.5 GHz 1 VPS05163

BFP181R

Contextual Info: BFP196R NPN Silicon RF Transistor* • For low noise, low distortion broadband 3 amplifiers in antenna and telecommunications 2 4 systems up to 1.5 GHz at collector currents from 1 20 mA to 80 mA • Power amplifier for DECT and PCN systems • fT = 7.5 GHz, F = 1.3 dB at 900 MHz

029998

Abstract: BFP196W BGA420 38128
Contextual Info: BFP196W NPN Silicon RF Transistor* • For low noise, low distortion broadband 3 amplifiers in antenna and telecommunications 2 4 systems up to 1.5 GHz at collector currents from 1 20 mA to 80 mA • Power amplifier for DECT and PCN systems • fT = 7.5 GHz, F = 1.3 dB at 900 MHz

BFP196W

Abstract: BGA420
Contextual Info: BFP196W NPN Silicon RF Transistor* • For low noise, low distortion broadband 3 amplifiers in antenna and telecommunications 2 4 systems up to 1.5 GHz at collector currents from 1 20 mA to 80 mA • Power amplifier for DECT and PCN systems • fT = 7.5 GHz, F = 1.3 dB at 900 MHz