sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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sx3704ap239transistor 801398c547+66c131cin2222a2n50b2n2064radio ac176 ac126sft353
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RCA H 541
Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Contextual Info: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK
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rca h 5412t3122n2654as218 transistor+6gex 74adiode germanium 1n283k3004tfk diodeac132ti-483
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CEB63A3
Abstract: cep63a3 cEp63A
Contextual Info: CEP63A3/CEB63A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 66A, RDS ON = 10mΩ @VGS = 10V. RDS(ON) = 14mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.
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cep63a3/ceb63a3o-220o-263ceb63a3+2cep63a3cep63a
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Contextual Info: AUIRG4PH50S AUTOMOTIVE GRADE INSULATED GATE BIPOLAR TRANSISTOR C VCES = 1200V Features • Standard: Optimized for minimum saturation voltage and low operating frequencies < 1kHz • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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transistor 2sa 2sb 2sc 2sd2sk5962sc9062sa1281+6bup 3130c3885a2sd1032sa137934d 937 086bfq59
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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cb-f36c2sd16422sd21822sc4489+11-08s-ksd 302 250v, 10airf 5630transistor 2sb 367irf 3055ac153ytransistor esm 2878tip 43c transistor2sk116bf199bd643
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TRANSISTOR BDX
Abstract: pnp 150w darlington transistor to3 package BDX66 BDX66C transistor bdx66 BDX66B TRANSISTOR 150w darlington transistor to3 package BDX66C Transistor BDX66A BDX66B
Contextual Info: PNP DARLINGTON SILICON POWER TRANSISTOR BDX 66, A, B, C • Hermetic Metal TO3 Package. • Ideal for General Purpose Low Frequency Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCEO VCBO
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bdx66-100v-120vo-204aa+9transistor bdxpnp 150w darlington transistor to3 packagebdx66ctransistor bdx66bdx66b transistor150w darlington transistor to3 packagebdx66c transistorbdx66abdx66b
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Contextual Info: PNP DARLINGTON SILICON POWER TRANSISTOR BDX 66, A, B, C • Hermetic Metal TO3 Package. • Ideal for General Purpose Low Frequency Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCEO VCBO
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2N0807
Abstract: Q67060-S6082 Q67040-S4263 2n08 spp80n08s2-07 Q67040-S4264
Contextual Info: Preliminary data OptiMOSâ Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • 175°C operating temperature • Avalanche rated SPI80N08S2-07 SPP80N08S2-07,SPB80N08S2-07 P-TO262-3-1 VDS 75 V RDS on max. SMD version 7.1 mΩ ID
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spi80n08s2-07spp80n08s2-07spb80n08s2-07p-to262-3-1+7p-to263-3-2p-to220-3-12n0807q67060-s6082q67040-s42632n08q67040-s4264
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048N06L
Abstract: IPP048N06L IPB048N06L IEC61249-2-21 PG-TO220-3 GS-20
Contextual Info: IPP048N06L G OptiMOS Power-Transistor IPB048N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMDversion ID 60 V 4.4 mΩ 100 A • 175 °C operating temperature
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ipp048n06lipb048n06liec61249-2-21p-to220-3-1+4p-to263-3-2048n06lpg-to220-3gs-20
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048N06L
Abstract: IPP048N06L IPB048N06L PG-TO220-3 66a smd
Contextual Info: IPP048N06L G OptiMOS Power-Transistor IPB048N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMDversion ID 60 V 4.4 mΩ 100 A • 175 °C operating temperature
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ipp048n06lipb048n06lp-to220-3-1p-to263-3-2+3048n06lpg-to220-366a smd
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048n06l
Abstract: 44 SMD dpak
Contextual Info: IPP048N06L G OptiMOS Power-Transistor IPB048N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMDversion ID 60 V 4.4 mΩ 100 A • 175 °C operating temperature
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ipp048n06lipb048n06lp-to220-3-1048n06l+2p-to263-3-244 smd dpak
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048N06L
Contextual Info: IPP048N06L G OptiMOS Power-Transistor IPB048N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMDversion ID 60 V 4.4 mΩ 100 A • 175 °C operating temperature
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IPB048N06L
Abstract: IPP048N06L smd 113 j D 92 M 03 DIODE PG-TO220-3
Contextual Info: IPP048N06L G OptiMOS Power-Transistor IPB048N06L G Product Summary Features V DS • For fast switching converters and sync. rectification R DS on ,max • N-channel enhancement - logic level SMDversion ID 60 V 4.4 m: 100 A • 175 °C operating temperature
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ipp048n06lipb048n06lpg-to220-3pg-to263-3+3048n06lsmd 113 jd 92 m 03 diode
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PN0807
Abstract: SPB100N08S2-07 SPP100N08S2-07 smd diode UM 07 BSPB100N08S2-07 66a smd
Contextual Info: SPP100N08S2-07 SPB100N08S2-07 Preliminary data OptiMOS=Power-Transistor Feature N-Channel Product Summary Enhancement mode VDS 75 V 175°C operating temperature RDS on max. SMD version 6.8 m Avalanche rated ID 100 A dv/dt rated P-TO263-3-2 Type
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spp100n08s2-07spb100n08s2-07p-to263-3-2p-to220-3-1+6q67060-s6044pn0807q67060-s6046smd diode um 07bspb100n08s2-0766a smd
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PN0807
Abstract: 66a smd D66A Q67060-S6044 ANPS071E SPB100N08S2-07 SPP100N08S2-07 H14F
Contextual Info: SPP100N08S2-07 SPB100N08S2-07 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 75 V • Enhancement mode RDS on max. SMD version 6.8 mΩ • 175°C operating temperature ID 100 A • Avalanche rated P- TO263 -3-2 P- TO220 -3-1 • dv/dt rated
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spp100n08s2-07spb100n08s2-07q67060-s6044pn0807+7q67060-s6046bspp100n08s2-07bspb100n08s2-0766a smdd66aanps071eh14f
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Contextual Info: SPP100N08S2-07 SPB100N08S2-07 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 75 V • Enhancement mode RDS on max. SMD version 6.8 mΩ • 175°C operating temperature ID 100 A • Avalanche rated P- TO263 -3-2 P- TO220 -3-1 • dv/dt rated
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spp100n08s2-07spb100n08s2-07q67060-s6044pn0807+3q67060-s6046bspp100n08s2-07bspb100n08s2-07
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PN0807
Abstract: 66a smd
Contextual Info: SPP100N08S2-07 SPB100N08S2-07 OptiMOS =Power-Transistor Product Summary Feature 75 VDS N-Channel RDS on Enhancement mode max. SMD version ID 175°C operating temperature P- TO263 -3-2 Avalanche rated V 6.8 m 100 A P- TO220 -3-1 dv/dt rated Type
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spp100n08s2-07spb100n08s2-07q67060-s6044q67060-s6046+4pn0807bspp100n08s2-07bspb100n08s2-0766a smd
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PN0807
Abstract: smd diode marking code SM ANPS071E SPB100N08S2-07 SPP100N08S2-07 INFINEON PART MARKING to263 6020G Diode smd code sm 68M100
Contextual Info: SPP100N08S2-07 SPB100N08S2-07 OptiMOSâ Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version ID • 175°C operating temperature P- TO263 -3-2 • Avalanche rated 75 V 6.8 mΩ 100 A P- TO220 -3-1 • dv/dt rated
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spp100n08s2-07spb100n08s2-07q67060-s6044q67060-s6046+9pn0807bspp100n08s2-07bspb100n08s2-07smd diode marking code smanps071einfineon part marking to2636020gdiode smd code sm68m100
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4n0609
Abstract: F45A IPB45N06S4-09 IPI45N06S4-09 IPP45N06S4-09 PG-TO263-3-2 4N06
Contextual Info: IPB45N06S4-09 IPI45N06S4-09, IPP45N06S4-09 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 9.2 mΩ ID 45 A Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature
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2N0807
Abstract: Q67040-S4263 66a smd Q67040-S4264 SPB80N08S2-07 SMD diode 132A S4264 SPP80N08S2-07 6020G
Contextual Info: SPP80N08S2-07 SPB80N08S2-07 Preliminary data OptiMOS =Power-Transistor Product Summary Feature • N-Channel • Enhancement mode •=175°C operating temperature VDS 75 V RDS on max. SMD version 7.1 mΩ ID 80 A P-TO263-3-2 • Avalanche rated P-TO220-3-1
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spp80n08s2-07spb80n08s2-07p-to263-3-2p-to220-3-1+7q67040-s42632n080766a smdq67040-s4264smd diode 132as42646020g
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N1702
Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922
Contextual Info: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961
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2n34a2n43a2n44a2n59a+162n59b2n59c2n60a2n60b2n60c2n61an17022n2772sa632n390al204a2n408tfk 940oc592n3742n1922
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ITD50N04S4L-07
Contextual Info: ITD50N04S4L-07 OptiMOSTM-T2 Power-Transistor Product Summary VDS 40 V RDS on ,max 7.2 mΩ ID 50 A Features • Dual N-channel Logic Level Common Drain - Enhancement mode PG-TO252-5 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature
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4N04L08
Abstract: IPG20N04S4L F17 DIODE IPG20N04S4L-08
Contextual Info: IPG20N04S4L-08 OptiMOS -T2 Power-Transistor Product Summary V DS 40 V R DS on ,max4) 8.2 mW ID 20 A Features • Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature
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ipg20n04s4l-084n04l08ipg20n04s4lf17 diode |
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