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    048N06L Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IPD048N06L3GATMA1

    - Tape and Reel (Alt: IPD048N06L3GATMA1)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas IPD048N06L3GATMA1 Tape & Reel 20,000 17 Weeks 2,500
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $0.56
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    Newark IPD048N06L3GATMA1 Cut Tape 1,154 1
    • 1 $2.47
    • 10 $2.47
    • 100 $1.08
    • 1000 $0.84
    • 10000 $0.81
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    Rochester Electronics IPD048N06L3GATMA1 8,601 1
    • 1 -
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    • 100 $0.87
    • 1000 $0.72
    • 10000 $0.64
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    TME IPD048N06L3GATMA1 2,500
    • 1 -
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    • 10000 $0.55
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    EBV Elektronik IPD048N06L3GATMA1 18 Weeks 2,500
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    Win Source Electronics IPD048N06L3GATMA1 18,130
    • 1 -
    • 10 -
    • 100 $1.18
    • 1000 $0.79
    • 10000 $0.79
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    Infineon Technologies AG IPD048N06L3GBTMA1

    Mosfet, N-Ch, 60V, 90A, To-252-3; Available Until Stocks Are Exhausted Alternative Available |Infineon Technologies IPD048N06L3GBTMA1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark () IPD048N06L3GBTMA1 Tape & Reel 676 100
    • 1 -
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    • 100 $0.82
    • 1000 $0.56
    • 10000 $0.46
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    IPD048N06L3GBTMA1 Cut Tape 676 1
    • 1 $1.06
    • 10 $1.06
    • 100 $0.82
    • 1000 $0.56
    • 10000 $0.46
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    Vyrian IPD048N06L3GBTMA1 11,011
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    Win Source Electronics IPD048N06L3GBTMA1 19,120
    • 1 -
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    • 100 $1.18
    • 1000 $0.79
    • 10000 $0.79
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    Infineon Technologies AG IPB048N06LG

    Power Field-Effect Transistor, 100A I(D), 60V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics IPB048N06LG 216 1
    • 1 -
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    • 100 $1.58
    • 1000 $1.31
    • 10000 $1.17
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    Infineon Technologies AG IPD048N06L3 G

    Transistor: N-MOSFET; 60V; 90A; Idm: 360A; DPAK,TO252AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME IPD048N06L3 G 1,265 72
    • 1 -
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    • 100 $0.93
    • 1000 $0.77
    • 10000 $0.77
    		Buy Now
    Win Source Electronics IPD048N06L3 G 20,000
    • 1 -
    • 10 -
    • 100 $1.18
    • 1000 $0.79
    • 10000 $0.79
    		Buy Now

    Infineon Technologies AG IPB048N06LGATMA1

    Power Field-Effect Transistor, 100A I(D), 60V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian IPB048N06LGATMA1 8,461
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    Find more 048N06L price and stock on Findchips.com

    048N06L Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    048N06L

    Contextual Info: 048N06L G OptiMOS Power-Transistor 048N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMDversion ID 60 V 4.4 mΩ 100 A • 175 °C operating temperature


    Original     		ipp048n06lipb048n06lp-to220-3-1048n06l+1p-to263-3-2 PDF

    048N06L

    Abstract: IPP048N06L IPB048N06L PG-TO220-3 66a smd
    Contextual Info: 048N06L G OptiMOS Power-Transistor 048N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMDversion ID 60 V 4.4 mΩ 100 A • 175 °C operating temperature


    Original     		ipp048n06lipb048n06lp-to220-3-1p-to263-3-2+3048n06lpg-to220-366a smd PDF

    IPD048N06L3 G

    Abstract: JESD22 048N06L
    Contextual Info: 048N06L3 G Type OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max 4.8 mΩ ID 90 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		ipd048n06l3pg-to-252-3048n06lipd048n06l3 g+1jesd22 PDF

    048n06l

    Abstract: 44 SMD dpak
    Contextual Info: 048N06L G OptiMOS Power-Transistor 048N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMDversion ID 60 V 4.4 mΩ 100 A • 175 °C operating temperature


    Original     		ipp048n06lipb048n06lp-to220-3-1048n06l+2p-to263-3-244 smd dpak PDF

    048N06L

    Abstract: IPP048N06L IPB048N06L IEC61249-2-21 PG-TO220-3 GS-20
    Contextual Info: 048N06L G OptiMOS Power-Transistor 048N06L G Product Summary Features V DS • For fast switching converters and sync. rectification • N-channel enhancement - logic level R DS on ,max SMDversion ID 60 V 4.4 mΩ 100 A • 175 °C operating temperature


    Original     		ipp048n06lipb048n06liec61249-2-21p-to220-3-1+4p-to263-3-2048n06lpg-to220-3gs-20 PDF

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		b192-h6780-g10-x-7600sp000012954sp000013610sp000017969+13sp000014627sp000018085sp000018086pef 24628psb 21493siemens pmb 661047n60c3psb 21553pmb7725pef 22628pmb6610psb 50505pmb 6819 PDF

    IPB048N06L

    Abstract: IPP048N06L smd 113 j D 92 M 03 DIODE PG-TO220-3
    Contextual Info: 048N06L G OptiMOS Power-Transistor 048N06L G Product Summary Features V DS • For fast switching converters and sync. rectification R DS on ,max • N-channel enhancement - logic level SMDversion ID 60 V 4.4 m: 100 A • 175 °C operating temperature


    Original     		ipp048n06lipb048n06lpg-to220-3pg-to263-3+3048n06lsmd 113 jd 92 m 03 diode PDF