TRANSISTOR 5K Search Results
TRANSISTOR 5K Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| BLA1011-300 | Rochester Electronics LLC | BLA1011-300 - 300W LDMOS Avionics Power Transistor |
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| 54F151LM/B | Rochester Electronics LLC | 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL |
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| 93L422ADM/B | Rochester Electronics LLC | 93L422A - 256 x 4 TTL SRAM |
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| 54F151/BEA | Rochester Electronics LLC | 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) |
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| 54F573FM/B | Rochester Electronics LLC | 54F573 - Bus Driver, F/FAST Series, 1-Func, 8-Bit, True Output, TTL, |
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TRANSISTOR 5K Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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CTA4100AContextual Info: Relays and Timers www.factorymation.com Digital Timers/Counters/Tachometers 6 1/1IN D Part Number Input Voltage Description CTA4000A 100–240VAC Output 1: Transistor/Relay comb. Output 2: Transistor CTA4000D 24VDC Output 1: Transistor/Relay comb. Output 2: Transistor |
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cta4000a240vaccta4000d24vdc+4 | |
2n2222 2n5401 2n5551
Abstract: TPQ6700 TPQA05 TPQ6502 TPQ5400 2N2907 NPN Transistor TPQ2907A TPQ3724 TPQ2221 TPQ2222
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14-pin2n22222n2907tpq6600+15 | |
Mitsubishi M54564
Abstract: M54534 M54571P m54667p M54585FP m54571 M54566FP 16P2N M54522P equivalent m54532p
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a/20v16p2z16pin225mil+15 | |
MJE2955
Abstract: 2N3645 bc557 BC307 BC212
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o-92spo-237o-220o-928+6 | |
la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
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an-784ala 4440 amplifier circuit diagram 300 wattla 4440 amplifier circuit diagram 300 wattdiode lt 7229+7 | |
2SC5170
Abstract: LE300 mitsubishi vcb transistor Common Base amplifier common base amplifier circuit DUAL TRANSISTOR
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2sc5170100hz110mvtypx10-3+5 | |
2SC5169
Abstract: low noise transistor table
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2sc51692scs169100mvtypx10-3+1 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UDT1605 Preliminary NPN EPITAXIAL SILICON TRANSISTOR 120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR DESCRIPTION The UTC UDT1605 is an NPN Darlington transistor. Utilizing UTC’s advanced techonology, UDT1605 features ultra-high DC |
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udt1605udt1605g-ab3-rot-89qw-r208-048 | |
R T O BH TRANSISTOR
Abstract: 2SC5168 transistor CR NPN
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2sc5168100mv250to800270hz+3 | |
2SB1412
Abstract: 2SB1412L-TN3-F-R 2SB1412-TN3-F-R
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2sb1412o-2522sb1412l2sb1412-tn3-f-r+2 | |
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Contextual Info: UTC 2SB1386 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR DESCRIPTION The UTC 2SB1386 is an epitaxial planar type PNP silicon transistor. 1 FEATURES *Excellent DC current gain characteristics *Low VCE sat VCE(sat)= -0.35V (Typ) (Ic/IB = -4A/-0.1A) |
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2sb1386ot-89figure12qw-r208-019 | |
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Contextual Info: UTC 2SB1386 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR DESCRIPTION The UTC 2SB1386 is an epitaxial planar type PNP silicon transistor. 1 FEATURES *Excellent DC current gain characteristics *Low VCE sat VCE(sat)= -0.35V (Typ) (Ic/IB = -4A/-0.1A) |
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2sb1386ot-89qw-r208-019 | |
2SA1927
Abstract: 05SV ra-100
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2sa1927100mvtyp270hzx10-3+2 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1412 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. FEATURES * Excellent DC current gain characteristics * Low VCE SAT VCE(SAT)= -0.35V (Typ) |
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2sb14122sb1412l-x-tn3-t2sb1412g-x-tn3-t2sb1412l-x-tn3-r+3 | |
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M54523FP
Abstract: M54523P
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m54523p/fp500mam54523pm54523fp+1 | |
2SB1412Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1412 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. 1 TO-252 FEATURES *Excellent DC current gain characteristics *Low VCE SAT VCE(SAT)= -0.35V (Typ) |
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2sb1412o-2522sb1412l2sb1412-x-tn3-r+2 | |
2SB1412Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1412 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. 1 FEATURES * Excellent DC current gain characteristics * Low VCE SAT VCE(SAT)= -0.35V (Typ) |
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2sb1412o-2522sb1412l-tn3-r2sb1412g-tn3-r+1 | |
M54526P
Abstract: M54526FP
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m54526p/fp500mam54526pm54526fp | |
DARLINGTON TRANSISTOR ARRAY
Abstract: npn darlington array M54523P M54523FP TRANSISTOR ARRAY NPN DARLINGTON TRANSISTOR ARRAY
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m54523p/fp500mam54523pm54523fp+4 | |
TO226AA
Abstract: transistor MPSA56
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mpsa06o-226aampsa56ot-23+5 | |
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Contextual Info: <TRANSISTOR ARRAY> M63840FP 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE SOURCE TYPE DESCRIPTION PIN CONFIGURATION M63840FP are eight-circuit output-sourcing Darlington transistor array. The circuits are made of PNP and NPN NC transistors. Both the semiconductor integrated circuits perform |
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m63840fp500ma | |
MPS2907A EQUIVALENT
Abstract: MPS2907A
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mps2907ao-226aaot-23mmbt2907a+2 | |
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Contextual Info: MPSA06 Small Signal Transistor NPN t c u rod P New TO-226AA (TO-92) 0.142 (3.6) 0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) Features • NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the PNP transistor |
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mpsa06o-226aampsa56ot-23+1 | |
pin configuration NPN transistor 2n3906
Abstract: TRANSISTOR 2N3904 2N3906 plastic PNP switching transistor 2N3906 mhz 2N3904 2N3906 MMBT3906 pin configuration NPN transistor 2N3904 pin configuration pnp transistor 2n3906
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2n3906o-226aa2n3904ot-23+7 | |