TRANSISTOR 58W Search Results

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

transistor* igbt 70A 300 V

Abstract: 70A 1200V IGBTS Rectifier, 70A, 1000V Super-247 Package irg4psh71udp IRFPS37N50A diode 70A
Contextual Info: PD - 95908 IRG4PSH71UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Copack IGBT Features • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching

Contextual Info: PD - 95908 IRG4PSH71UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Copack IGBT Features • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching

Contextual Info: PD - 95892 IRG4PSH71UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter

Contextual Info: PD - 91681A IRG4PSC71U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter

Rectifier, 70A, 1000V

Abstract: IRFPS37N50A IRG4PSH71U 70A 1200V IGBTS 1200v fet transistor 58w
Contextual Info: PD - 91685 IRG4PSH71U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter

IRG4PSC71U

Abstract: T5 transistor TO-247
Contextual Info: PD - 91681A IRG4PSC71U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter

IRG4PSC71U

Contextual Info: PD - 91681 IRG4PSC71U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter

IRG4PSH71UD

Abstract: IRG4P IRF 547 MOSFET IRFPS37N50A MOSFET 1000V 140A TO274
Contextual Info: PD - 91686 IRG4PSH71UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter

Contextual Info: PD - 91686 IRG4PSH71UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter

st l6574

Abstract: ignition IGBTS L6561 AN966 L6574 Electronic ballast 58W l6561 in boost Ignition Transformer L6561 AN993 resonant half bridge MOSFET driver IC
Contextual Info: AN993 APPLICATION NOTE ELECTRONIC BALLAST WITH PFC USING L6574 AND L6561 by I. Dal Santo, U. Moriconi The advent of dedicate IC for lamp ballast applications is replacing the old solutions based on bipolar transistor driven by a saturable pulse transformer.

transistor 58w

Abstract: IRG4PSC71K
Contextual Info: PD - 91683 IRG4PSC71K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR C Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins • High abort circuit rating IGBTs, optimized for

ir emitter

Abstract: IRG4PSH71K
Contextual Info: PD - 91687 IRG4PSH71K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR C Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins • High short circuit rating IGBTs, optimized for

ELECTRONIC BALLAST transistor DIAGRAM

Abstract: AN993 L6561 L6574 l6561 in boost Electronic ballast 58W resonant half bridge MOSFET driver IC 220k 400V UV ballast ELECTRONIC BALLAST FLUORESCENT LAMP
Contextual Info: AN993 APPLICATION NOTE ELECTRONIC BALLAST WITH PFC USING L6574 AND L6561 by I. Dal Santo, U. Moriconi The advent of dedicate IC for lamp ballast applications is replacing the old solutions based on bipolar transistor driven by a saturable pulse transformer.

Contextual Info: PD - 91683B IRG4PSC71K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR C Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins • High abort circuit rating IGBTs, optimized for motorcontrol

SCHEMATIC IGNITION WITH IGBTS

Abstract: ELECTRONIC BALLAST 6 LAMP SCHEMATIC Ballast driver L6574 Electronic ballast 58W L6561 application note STP6NB50 Capacitive discharge ignition L6561 AN 600V igbt dc to dc boost converter electronic ballast
Contextual Info: AN993 APPLICATION NOTE ELECTRONIC BALLAST WITH PFC USING L6574 AND L6561 by F. Sandrini & U. Moriconi The advent of dedicate IC for lamp ballast applications is replacing the old solutions based on bipolar transistor driven by a saturable pulse transformer.

T5 transistor TO-247

Abstract: IRG4PSH71K mj 340
Contextual Info: PD - 91687A IRG4PSH71K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR C Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins • High short circuit rating IGBTs, optimized for

IRFPS37N50A

Abstract: IRG4PSC71K
Contextual Info: PD - 91683B IRG4PSC71K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR C Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins • High abort circuit rating IGBTs, optimized for motorcontrol

Electronic ballast 58W

Abstract: st l6574 L6561 AN966 L6574 ignition IGBTS 10 amp L6574 application Ballast driver L6574 ignition IGBTS L6561 AN993
Contextual Info: AN993 APPLICATION NOTE ELECTRONIC BALLAST WITH PFC USING L6574 AND L6561 by I. Dal Santo, U. Moriconi The advent of dedicate IC for lamp ballast applications is replacing the old solutions based on bipolar transistor driven by a saturable pulse transformer.

SCHEMATIC IGNITION WITH IGBTS

Abstract: ELECTRONIC ballast choke details L6561 AN966 ballast diagram SCHEMATIC IGNITION iGBT Electronic ballast 58W operational amplifier e25/13/7 ELECTRONIC BALLAST 2 LAMP SCHEMATIC st l6574
Contextual Info: AN993 APPLICATION NOTE ELECTRONIC BALLAST WITH PFC USING L6574 AND L6561 by F. Sandrini, U. Moriconi and I. Dal Santo The advent of dedicate IC for lamp ballast applications is replacing the old solutions based on bipolar transistor driven by a saturable pulse transformer.

SCHEMATIC IGNITION WITH IGBTS

Abstract: L6561 AN966 st l6574 arc lamp power supply wiring diagram resonant half bridge ballast schematic ignition IGBTS ELECTRONIC BALLAST LAMP SCHEMATIC operational amplifier Electronic ballast 58W ELECTRONIC BALLAST 2 LAMP SCHEMATIC
Contextual Info: AN993 APPLICATION NOTE  ELECTRONIC BALLAST WITH PFC USING L6574 AND L6561 by F. Sandrini, U. Moriconi and I. Dal Santo The advent of dedicate IC for lamp ballast applications is replacing the old solutions based on bipolar transistor driven by a saturable pulse transformer.

Contextual Info: PRELIMINARY CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer

2N08L50

Abstract: 58W smd smd 58w Q67060-S6062 marking code 58W 04
Contextual Info: SPD22N08S2L-50 Preliminary data OptiMOS â Power-Transistor Feature • N-Channel Product Summary • Enhancement mode VDS 75 V • Logic Level RDS on 50 mΩ • 175°C operating temperature ID 22 A • Avalanche rated P-TO-252-3-11 • dv/dt rated Type