TRANSISTOR 43B Search Results

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

AA1A4P

Abstract: SC43B PA33
Contextual Info: NEC DESCRIPTION NPN SILICON TRANSISTOR AA1A4P The AA1A4P is designed for use in medium speed switching PACKAGE DIMENSIONS circuit. FEATURE in millimeters inches 52 MAX. (0204 MAX.) • Bias resistors built-in type NPN transistor equivalent circuit. >c R t = 10 ki2

lv 5682

Abstract: mar 835 mosfet MAS 560 ag TRANSISTOR D 5702 RD60HUF1 MOSFET, 3077 transistor k 2837
Contextual Info: ATTENTION OBSERVE PRECAUTIONS 1'OR HANDLING Revision date: J 2th/M ar.;02 MITSUBISHI RF POW ER MOS FET h le x ro s ta tic SENSITIVE DEVÏCES RD60HUF1 Silicon MOSFET Power Transistor, 520M Hz 60W DESCRIPTION OUTLINE DRAW ING RD60HUF1 is a MOS FET type transistor specifically

2SA1151

Abstract: 2SC2718 I084 2sa115 05B2 JE 33 PA33 2SA11 transistor AE RF
Contextual Info: Silicon Transistor 2 S A 1151 ' PNPx f □V \= 7 's i> 7 .9 fe m m iis m m PNP Silicon Epitaxial Transistor Low Frequency Amplifier Industrial Use PACKAGE DIMENSIONS f t * / FEATURES O ¡¡SI r^i ^ \ Unit : mm) V ceo . 50 V ^ ^ |V| | |J ^• o 2SC2718 1=> yyui)/ > ?>

Contextual Info: N AMER PHILIPS/DISCRETE bTE » bbS3R31 □DE'llDl “JS4 I IAPX B L V 8 0 /2 8 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in base stations in the v.h.f. mobile radio band. Features: • multi-base structure and diffused emitter ballasting resistors for an optimum temperature profile;

bi 370 transistor

Abstract: JNI Corporation AA1A4p bi 370 transistor e PA33 nec j
Contextual Info: SEC k Compound Transistor A l Î T / \ f Z AA1A4P f&tfc F*9ÜcN P N i 1J 3 > F 5 >•$>;*? Resistors Built-in Type NPN Silicon Epitaxial Transistor Medium Speed Switching ftWm/P A C K A G E ^/FEATUR ES DIMENSIONS Unit : mm o '<47 è I*3/Sï L t V ' ì t o

J6 transistor

Abstract: 2SD1513 PA33 2sb1068 2sb10681
Contextual Info: NEC j Silicon Transistor 2SD1513 NPNxfc NPN Silicon Epitaxial Transistor Audio Frequency Power Amplifier #* /FEA TUR ES *fffi£IU/PACKAGE DIMENSIONS o \&W±jzWimMM]cn> ^ — 9 — Y 7 4 7\ v v 4 -rm k7 U nit: mm j K K7-f 7"%f, & t i m h FEX l& = > u 7 ^ S & f t l l c l l t r f o

2SC3616

Abstract: PA33 ScansUX881
Contextual Info: NEC j '> IJ 3 > Silicon Transistor 2SC3616 N P N l b ° ^ + '> 7 ; i/i'> lJ b =7>i> 7.9 NPN Silicon Epitaxial Transistor High Gain Amplifier W */F E A T U R E S K W M / P A C K A G E D IM E N SIO N S Unit : mm O igjhpE'C’t ’ o hFE = 8 0 0 ~ 3 2 0 0 @ V ce = 2 . 0 V, Ic = 300 mA

221A-06

Abstract: AN569 MTP1N50 motorola 585 MOTOROLA N-Channel MOSFET 205 Mosfet MOTOROLA
Contextual Info: bflE T> • MOTOROLA SC XSTRS/R F b3b72SH OCHflbSM 43b « H O T b MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Pow er Field Effect Transistor IM-Channel Enhancement Mode Silicon Gate T T h is T M O S P o w e r FET is designed fo r high voltage, high speed

Contextual Info: KSR1010 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In TO-92 • Switching Circuit, Inverter, Interlace circuit Driver circuit • Built in bias Resistor (R=10KQ) • Complement to KSR2010 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

T2D 24 DIODE

Abstract: T2d 43 diode T2D 65 DIODE T2d 61 diode T2D DIODE 42 T2D DIODE 32 T2D 04 DIODE diode T2D
Contextual Info: July 1996 NDT455N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is

34B SOT

Abstract: NDT455N
Contextual Info: July 1996 NDT455N N-Channel Enhancement Mode Field Effect Transistor Features General Description These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is

Contextual Info: MOTOROLA SC XSTRS/R F bflE ]> L 3b72S4 0 CHflb24 43b «M O Tb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTP1N50 Pow er Field Effect Transistor IM-Channel Enhancement Mode Silicon Gate T M O S P O W E R FE T T h is T M O S P o w e r FET is d esig n ed fo r hig h v o ltag e, high speed

BT 816 transistor

Abstract: PA 1515 transistor 9921 transistor
Contextual Info: Philips Semiconductors bb£ 3 R 31 Q Q 35 Q b b SR? ^ B A P X _ Product specification NPN 9 GHz wideband transistor BFS540 N AMER PHILIPS/DISCRETE FEATURES PINNING PIN CONFIGURATION PIN • High power gain DESCRIPTION _ EL Code: N4 • Low noise figure

JE1100

Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Contextual Info: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices

iw 1688

Abstract: 7812 philips 227 1112 2t6 551 BFR540 BFS540 UBC870 TRANSISTOR D 1765 738 transistor BF 697 Transistor MJE 5331
Contextual Info: Philips Semiconductors 0 0 3 2 0 b ti 5^7 • APX Product specification NPN 9 GHz wideband transistor BFS540 N AUER PHILIPS/DISCRETE FEATURES b^E » 1 PIN CONFIGURATION PIN • High power gain DESCRIPTION Code: N4 • Low noise figure • High transition frequency

STT 3 SIEMENS

Abstract: TRANSISTOR 2FE ScansUX7 C67078-A3209-A2
Contextual Info: SIEMENS BUZ 384 SIPMOS Power Transistor • N channel • Enhancement mode • FREDFET Type BUZ 384 Vds 500 V DS on 10.5 A 0.6 w Package Ordering Code TO-218AA C67078-A3209-A2 Maximum Ratings Parameter Symbol Drain source voltage ^DS V DGR Drain-gate voltage

TIS43

Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
Contextual Info: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.

Contextual Info: b b S B ' m 0054443 STT « A P X Philips Semiconductors PNP general purpose transistor — BC807W; BC808W AUER PHILIPS/DISCRETE FEATURES Product specification b?E j>— — — • MAX. UNIT -5 0 V -3 0 V PIN CONFIGURATION • High current • S- mini package.

Contextual Info: PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR IS S U E 1 - A P R IL 94 FEATURES * 200 Volt VCE0 * Gain of 250 at lc=0.3 Amps * Very low saturation voltage ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VALUE UNIT V V VCBO -200 Collector-Em itter Voltage

D403 power transistor

Abstract: D403 transistor TRANSISTOR D403 D403 A 2SB1344 100V 2A MPT3 2SD2025 D403 SC-75A 2305 transistor
Contextual Info: 2SB1344 2SD2025 Transistors I Power Transistor —100V, —8A 2SB1344 •A b s o lu te maximum ratings (Ta—25‘C ) •F e a tu re s 1) 2) 3) 4) Darlington connection fo r high D C current gain. Built-in resistor between base and emitter. Built-in dam per diode.

169800

Abstract: 80500 TRANSISTOR D 5036 cd 4599 4463 B 80500 bb
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE687 SERIES FEATURES • LOW NOISE: 1.3 dB AT 2.0 GHz • LOW VOLTAGE OPERATION • EASY TO MATCH • HIGH GAIN BANDWIDTH PRODUCT: fTof 13 GHz 18 SOT 343 STYLE 19 (3 PIN ULTRA SU PER MINI MOLD) 30 (SOT 323 STYLE)