SC43B Search Results

Contextual Info: SC43B SMD POWER INDUCTORS MARKING ● Features 1. Open frame construction 2 Excellent Power Density 3 Engineered to Provide High Efficiency ELECTRICAL CHARACTERISTICS DC Resistance Ω MAX (2) (1) Saturation(3) Temperature (4) Current Current (A) (A) SC43B-1R0

Contextual Info: SC43B SMD POWER INDUCTORS MARKING Features 1. Open frame construction 2 Excellent Power Density 3 Engineered to Provide High Efficiency ELECTRICAL CHARACTERISTICS DC Resistance MAX (2) (1) Saturation(3) Temperature (4) Current Current (A) (A) SC43B-1R0

2SC3355

Abstract: transistor 2sc3355 and application PA33 marking PA33
Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3355 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. PACKAGE DIMENSIONS

PA33

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SA992 equivalent transistor

Abstract: 2SC1845 equivalent 2SA992 2SA992 equivalent 2sc 5060 2SC1845 PA33 transistor 2SC1845
Contextual Info: /VEC 1 ? '> i > h ^ > x ^ 2SA992 P # z S ilico n T r a n s is to r / \ 'T 7 t y N P x b ° ^ 4 i '> 7 V U f l2 '> «; 3 > h ^ ^ W-MM i t 0 [§ i| & f f iX f U ^ i7 3 > i I- u — i \ , y y v “i;x f iW if c if f l, t O iItjÉ 'I'S :, L ' 7 — T ‘ M i/'. : m m )

PJA 0836

Abstract: PJA 0849 PA33 T108 T46C TC61 PJA+0849 1/serial/PJA 0836
Contextual Info: Î & # 3Æ F*3 J & P N P x 'J = i> ^ - f ì ’ mm i t *<4 o 7 x t £ i / t £ l * I ü L T v ' â - fc ( R i — 47 k û ) t oAA1L4Z 3 > r 9 g y > >J T - I Î f f l T - ë É 1 “ 0 ( T a = 25 °C ) I l a v 9 9 z i v 9 9 - ^ - 1 ^ ì • -< — 9 -y B&

2sc3478a

Abstract: 2SA1376 PA33 A1376
Contextual Info: SEC Ì ? f / \ Silicon Transistors f 7 2 S A 1 3 7 6 , 1 3 7 6 A PNP Epitaxial Transistor High Voltage Amplifier PACKAGE DIMENSIONS ^/FEA TU RES Unit : mm o ftS E tt. V ceo : ~180 V/ —200 V (2SA1376/2SA1376A) O h FE « U t O ') — T / î H ^ f é O 2 S C 3 4 78/ 2 S C 3478A t

FZ 300 R 06 KL

Abstract: 2SC2901 PA33 W155
Contextual Info: NEC j ix r x Silicon T ra n sisto r A 2SC2901 N P N X h ° 9 * ' > 7 J U M V □ ' > > b = 7 9 jim m NPN Silicon Epitaxial Transistor High Speed Switching Industrial Use nm U n it: mm O x -i ¿ ‘' i S t 'o -y - f - > t o ff: 12 n s 3 ^ t On-8.0 n s 3 ; t e M

2SA954

Abstract: nec transistor 2sa954
Contextual Info: NEC D E S C R IP T IO N PNP SILICON TRANSISTOR 2SA954 The 2SA954 is designed for use in driver stage of high voltage P A C K A G E D IM E N S IO N S audio equipment. in millimeters inches 5.2 MAX. FEATURES • High total power dissipation. P j = 600 mW • High hpE and high voltage.

transistor 2sc1841

Abstract: 2SC1841 PA33 to92 af power amplifier "low speed switching transistor"
Contextual Info: NEC DESCRIPTION NPN SILICON TRANSISTOR 2SC1841 The 2SC1841 is designed for use in AF amplifier, driver and low speed switching. PACKAGE DIMENSIONS in millimeters inches 5.2 MAX. FEATURES • High Voltage V CE0 : 120 V • High hFE hFE : 600 TYP. (V Ce = 6.0 V, lc = 1.0 mA)

2SA990

Abstract: PA33
Contextual Info: NEC D E S C R IP TIO N PNP SILICON TRANSISTOR 2SA990 The 2SA 990 is designed for use in driver stage of A F amplifier. PACKAG E D IM E N S IO N S FEATURE • High hF E . in m illim ete rs inches h FE : 40 0 T YP. (V CE = - 6 . 0 V , !c = - 1 . 0 mA) 5 .2 M A X .

2SA733

Abstract: 2SA733 Q equivalent PA33 transistor 2sa733 ALL 2sa733
Contextual Info: DATA SHEET PNP SILICON TRANSISTOR 2SA733 PNP SILICON TRANSISTOR DESCRIPTION PACKAGE DRAWING Unit: mm The 2SA733 is designed for use in diver stage of AF amplifier. φ 5.2 MAX. FEATURES 5.5 MAX. • High hFE and Excellent Linearity: 200 TYP. hFE (VCE = −6.0 V, IC = −1.0 mA)

nec ap1l2q

Abstract: PA33
Contextual Info: DATA SHEET COMPOUND TRANSISTOR AP1 SERIES on-chip resistor NPN silicon epitaxial transistor For mid-speed switching PACKAGE DRAWING UNIT: mm FEATURES • Current drive available up to 0.7 A • On-chip bias resistor • Low power consumption during drive

marking PA33

Abstract: 2SC3582 PA33
Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC3582 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC3582 is an NPN epitaxial silicon transistor designed for use in PACKAFE DIMENSIONS in millimeters inches low-noise and small signal amplifiers from VHF band to UHF band. Low-

PA33

Abstract: AN1A4P "transistor equivalent"
Contextual Info: NEC D ESCRIPTIO N PNP SILICON TRANSISTOR AN1A4P The AN1A4P is designed for use in medium speed switching P A C K A G E DIM ENSIONS circuit. FEA TU R E in m illim eters inches 5.2 MAX. (0.204 MAX.) • Bias resistors built-in type PNP transistor equivalent circuit.

2SA1206

Abstract: 2SA1206 transistor 2sa 1206 PA33
Contextual Info: NEC PNP SILICON TRANSISTOR 2SA1206 DESCRIPTION The 2SA1206 is designed for general purpose amplifier and high PACKAGE DIMENSIONS speed switching applications. in millimeters inches FEATURES • High Frequency Current Gain. • High Speed Switching. • Small Output Capacitance.

PA33

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SC945 typical application

Abstract: 2sc945 TRANSISTOR 2Sc945 2SC945 Q equivalent Contact Electronics Equivalent to transistor 2sc945 how to check ic ship 2SC945 DATASHEET 2Sc945 equivalent PA33
Contextual Info: DATA SHEET NPN SILICON TRANSISTOR 2SC945 NPN SILICON TRANSISTOR DESCRIPTION The 2SC945 is designed for use in driver stage of AF amplifier and low speed switching. PACKAGE DRAWING Unit: mm φ 5.2 MAX. 5.5 MAX. FEATURES 12.7 MIN. • High voltage LVCEO = 50 V MIN.

transistor 2sc3355 and application

Abstract: 2sc3355 2SC3355, npn
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

marking PA33

Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC3582 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION DESCRIPTION The 2SC3582 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Low-noise figure, high gain, and high current capability achieve a very wide dynamic range

2SK679

Abstract: PA33 SC-43B
Contextual Info: 6427525 N E C N E C E L E C T R O N IC S IN C _ ?8D 18862 EL EC TRONICS INC ^ D T- ¿S'-If lir*. v' _D E J b 4 5 7 S a S DOlflfltiS 0 N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK679 FEA TU R ES • Suitable for switching power supplies, actuater controls,

H1P transistor

Abstract: 2SC1843 transistor 2sc1843 PA33 Scans-005445 IC H1P Gv-80
Contextual Info: NPN SILICON TRANSISTOR 2SC1843 D E S C R IP TIO N The 2SC1843 is designed fo r use in an A F a m p lifie r o f low level low PACKAG E D IM E N S IO N S noise and general purpose. in m illim ete rs inches FEATURES • H i g h h FE. h FE : 400 TYP. (V Ce = 6.0 V, l c = 1.0 m A )

transistor 2sa988

Abstract: 2SA988 2sa988 transistor PA33 VCE-60
Contextual Info: NEC DESCRIPTION PNP SILICON TRANSISTOR 2SA988 The 2SA988 is designed for use in driver stage of AF amplifier. PACKAGE DIMENSIONS in millimeters inches FEATURES • High Voltage. V ceo : ~120 V • Low Output Capacitance. C0b : 2.0 pF TYP. (V cb = ~ 3 0 V)

nec ap1l2q

Abstract: PA33
Contextual Info: DATA SHEET COMPOUND TRANSISTOR AP1 SERIES on-chip resistor NPN silicon epitaxial transistor For mid-speed switching PACKAGE DRAWING UNIT: mm FEATURES • Current drive available up to 0.7 A • On-chip bias resistor • Low power consumption during drive