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Catalog Datasheet	Type	Document Tags	PDF
marking PA33 Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC3582 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION DESCRIPTION The 2SC3582 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Low-noise figure, high gain, and high current capability achieve a very wide dynamic range	Original	2SC3582 2SC3582 2SC3582-T PU10210EJ01V0DS marking PA33	PDF
2SC3582 Abstract: 2SC3582-T PA33 marking PA33 Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PU10210EJ01V0DS 2SC3582 2SC3582 2SC3582-T PA33 marking PA33	PDF

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marking PA33

Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC3582 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION DESCRIPTION The 2SC3582 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. Low-noise figure, high gain, and high current capability achieve a very wide dynamic range

Original

2SC3582 2SC3582 2SC3582-T PU10210EJ01V0DS marking PA33

PDF

2SC3582

Abstract: 2SC3582-T PA33 marking PA33
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Original

PU10210EJ01V0DS 2SC3582 2SC3582 2SC3582-T PA33 marking PA33

PDF