TRANSISTOR 42T Search Results

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

AT415

Contextual Info: W h pt H E W L E T T mL/im P A C K A R D General Purpose, Low Noise NPN Silicon Bipolar Transistor Technical Data AT-41511, A T-41533 F eatu res D escrip tion • General Purpose NPN Bipolar Transistor • 900 MHz Performance: AT-41511: 1 dB NF, 15.5 dB Ga

BLY94

Abstract: VQE 13E philips Trimmer 60 pf transistor 42t vhf power transistor 50W Wf VQE 23 F BLY94 application notes film dielectric trimmer WF VQE 23 D WF VQE 23 e
Contextual Info: PHILIPS INTERNATIONAL bSE ß • 7110äSb> DGL3bSS 5^3 ■ PHIN B LY 94 V .H .F . P O W E R T R A N S IS T O R N-P-N planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 28 V . The transistor is resistance stabilized. Every tran­

HMXR-5001

Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Contextual Info: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog

Contextual Info: International TGR Rectifier PD-9.1585A IRG4PC40K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features * Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10ms @ 125°C, VGe = 15V

NDT410EL

Contextual Info: & June 1996 National Semi conduct or " NDT410EL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS

transistor 42t

Abstract: 2C5339 2C6193 chip die npn transistor
Contextual Info: 5-A PNP Power Transistor Chips 2C6193 FEATURES CHIP TYPE: AL • Epitaxial, Planar Design • Contact Metallization: Base, Emitter - Aluminum - 50,000 A Nominal Collector - Gold - 3,000 A Nominal • Die Thickness - 10 Mils Nominal • Complement to NPN 2C5339

TRANSISTOR 2FE

Contextual Info: International I R Rectifier pd-9.h6id IRG4PC30U PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

Contextual Info: International I R Rectifier Data Sheet No. PD -6.018D IR2121 CURRENT LIMITING LOW SIDE DRIVER Features Product Summary • G ate drive supply range from 12 to 18V ■ Undervoltage lockout ■ Current detection and limiting loop to limit driven power transistor current

mp4001

Abstract: MP4001 equivalent transistor equivalent table bipolar transistor NEC MP4501 mp4001 tran
Contextual Info: Power Transistor M odule and Power MOS-FET M odule As the density of electronic part mounting continues to increase in the field of discrete products, miniaturization of the hybrid devices named super mini and power mini is advancing rapidly. There are also calls for miniaturization and

STP19N05L

Abstract: STP19N06L
Contextual Info: SGS-THOMSON STP19N05L STP19N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TENTATIVE DATA TYPE Id V d ss RDS on STP19N05L 50 V 0.1 n 19 A STP19N06L 60 V 0.1 £2 19 A • ■ . ■ ■ ■ . ■ AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED

transistor 42t

Abstract: CSB1086 CSD1563
Contextual Info: CSB1086 CSB1086 PNP PLASTIC POWER TRANSISTOR Complementary CSD1563 Low frequency Power Amplifier PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE MIN. DIM MAX. A B 7.4 10.5 7.8 10.8 C 2.4 0.7 2.7 0.9 D 2.25 TYP. E F 0.49 | 0.75 G 4.5 TYP. L 15.7 TYP. M 1.27 TYP.

Contextual Info: CSB1086 CSB1086 PNP PLASTIC POWER TRANSISTOR Complementary CSD1563 Low frequency Power Amplifier PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE MIN. DIM MAX. A 7.4 7.8 10.8 B 10.5 C 2.4 2.7 D 0.7 0.9 2.25 TYP. E F 0.49 | 0.75 G 4.5 TYP. L 15.7 TYP. M 1.27 TYP.

InP transistor HEMT

Abstract: sxa389z XA3Z MCH18 SXA-389 SXA-389B SXA-389Z
Contextual Info: SXA-389 Z SXA-389(Z) 400MHz to 2500MHz ¼W Medium Power GaAs HBT Amplifier with Active Bias 400MHz to 2500MHz ¼W MEDIUM POWER GaAs HBT AMPLIFIER WITH ACTIVE BIAS Package: SOT-89 Product Description Features RFMD’s SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic

Contextual Info: Provisional Data Sheet No. PD - 9.1701 International IQR Rectifier dv/dt R A T E D HEXFET TRANSISTOR IRHM7Z60 IRHM8Z60 R E P E T IT IV E A V A L A N C H E A N D N -C H A N N E L MEGA RAD HARD 30 Vo It, 0.014Q, MEGA RAD HARD HEXFET In te rn a tio n a l R e c tifie r’s R AD H AR D te c h n o lo g y

Contextual Info: ¿ = 7 S G S -T H O M S O N TEA2164 SWITCH MODE POWER SUPPLY PRIMARY CIRCUIT • POSITIVE AND NEGATIVE OUTPUT CUR­ RENT UP T 0 1.2A AND - 1.7A ■ A TWO LEVEL COLLECTOR CURRENT LIMI­ TATION ■ COMPLETE TURN OFF AFTER LONG DURA­ TION OVERLOADS ■ UNDER AND OVER VOLTAGE LOCK-OUT

MPM3003

Abstract: MC33035 ss43 hall RGP 30 H1 MOTOROLA brushless dc controller schematic Ss54 DIODE drive control damp motor Transistor sS41 MC33033 TJ3 diode bridge
Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA MPM3003 ICePAK Power M odule P-Channel and N-Channel Power M OSFET in a Three-Phase Bridge Configuration M otorola Preferred D evice The MPM3003 is a three-phase bridge power circuit packaged in the new power SIP called the ICePAK package. The upper legs of the bridge consist of three P-Channel

transistor e2w

Abstract: book TRANSISTOR 2N2222
Contextual Info: For Immediate Assistance, Contaci M Local Salesperson IRR-BWOWW« XTR101 AVAILABLE IN DIE Precision, Low Drift 4-20mA TWO-WIRE TRANSMITTER FEATURES APPLICATIONS • INSTRUMENTATION AMPLIFIER INPUT Low Offset Voltage, 30nV max Low Voltage Drift, 0.75|iV/°C max

Ericsson Installation guide for RBS 6000

Abstract: ericsson RBS 6000 series INSTALLATION MANUAL Philips Twin Eye PLN 2032 ERICSSON RBS 6000 Ericsson RBS 6000 hardware manual ericsson RBS 3206 dil relay 349-383 IGBT semikron 613 GB 123 CT ericsson RBS 6000 series Z0765A08PSC
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

Contextual Info: 83C95 10BASE-T Ethernet Transceiver With On Chip Filters And AUI Technology, Incorporated PRELIMINARY October 1994 SEEQ Auto DUPLEX Designation Sym bol in d e n tifie s p ro d u c t a s A u t o D U P L E X d e v ic e Description The 83C95 is a highly integrated analog interface 1C for

APR2060

Abstract: K2.1
Contextual Info: Integrated Circuits Inc. aPR2060 K2.1 aPR2060 Datasheet 40 ~ 80 sec recording voice IC APLUS INTEGRATED CIRCUITS INC. Address: 3 F-10, No. 32, Sec. 1, Chenggung Rd., Taipei, Taiwan 115, R.O.C. TEL: 886-2-2782-9266 FAX: 886-2-2782-9255 WEBSITE : http://www.aplusinc.com.tw

Contextual Info: IN T E G R A T E D C IR C U IT S UC2906 UC3906 U N IT R O D E Sealed Lead-Acid Battery Charger FEATURES DESCRIPTION • The UC2906 series of battery charger controllers contains all of the necessary circuitry to optimally control the charge and hold cycle for sealed lead-acid batter­

DH0165

Abstract: ee1614 817a opto coupler transistor ka431az EE-1614 dh0165 8 pin ic Ringing Choke Converter 817A EE1614 H FSDH0165
Contextual Info: www.fairchildsemi.com Application Note AN4111 Fairchild Power Switch Single Chip FSDH Series for Charger and Adapter use. 1. Introduction Penetration rates of cellular phones, PCS phones and other battery-powered equipment have increased significantly. Consumers are demanding more

Contextual Info: G F T PI FS^FY 5Ü X J SEPTEMBER 1996 t PRELIMINARY INFORMATION S E M I C O N D U C T O R S D.S. 44101.5 SL6679 DIRECT CONVERSION FSK DATA RECEIVER The SL6679 is an advanced Direct Conversion FSK Data Receiver for operation up to 450MHz. The device integrates