TRANSISTOR 3F Z Search Results

2SD1505

Abstract: 2SB1064 TRANSISTOR 2sd1505 7M57
Contextual Info: ROHM CO S -7 > y LTD 7 fl2 flW OGOSf lf ib £ / T ransistors 2SD1505 - y lj 3 > 2SD15Û5 • 3 B R H Ï1 7^ 3 3 -0 * Ifcf^=3f - V 7 ^ 7 V - ^ NPN Freq. Power Amp. Epitaxial Planar NPN Silicon Transistor • W Fi \t"j£[2/Dim ensions Unit : mm)

TC-7986A

Abstract: 2SK2112 CMS01 7986A diode lt 0236
Contextual Info: zr — *5? N E h ^ > v ^ 3* MOS Field Effect Transistor r j C • :> — h 2 S K 2 1 1 2 MOS FET 2 S K 2 1 1 2 IÎN 3 1 + * ; H Ë M O S F E J T & U , * C ct 5 ¡ t g E K ^ g l * * -f -y T 't o * < - y * > 7 ìS j£ f c jÌt 'f c « > , C D r ^ ^ iX - ^ llE S i ^ ,

STV2160

Abstract: STV2161 stv*2160
Contextual Info: STV2161 VIDEO SCANNING PSI PROCESSOR . . . . . . . . . . . . . VIDEO PART RGB INPUT WITH FAST BLANKING SWITCH FOR SCART CONNECTOR RGB INPUT WITH FAST BLANKING FOR ON SCREEN DISPLAY / TELETEXT USER CONTROL FUNCTIONS : CONTRAST, BRIGHTNESS, SATURATION AVERAGE BEAM LIMITER FUNCTION WITH

TRANSISTOR 3F z

Abstract: BC857AT BC857BT BC857CT
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-523 Plastic-Encapsulate Transistors BC857AT, BT, CT TRANSISTOR PNP SOT-523 FEATURES Ideally suited for automatic insertion z For Switching and AF Amplifier Applications z 1. BASE 2. EMITTER 3. COLLECTOR

Contextual Info: Transistor m in i Reel PNP — R atin g s m iniB a g Bulk 500 pcs _ Type_ PNP G en eral P urpose BC80S-16 73-8081 BC80E-25 73-8082 BC806-40 73-8083 V ceo Ic 100 f ICS V mA M in-M ax VCE fT M H z P art Marketing 53-8081 53-8082 53-8083 25V 500mA 100-250

balanced modulator MC1496 theory

Abstract: balanced modulator MC1496 operation theory AM MODULATOR 1496 MC1496 application note balanced modulator MC1496 MC1496 balanced modulator theory MC1596 frequency doubler circuit MC1596K cascode transistor array VCO
Contextual Info: Philips Semiconductors Application note Balanced modulator/demodulator applications using the MC1496/1596 AN189 The transistors are connected in a cascode fashion. Therefore, sufficient collector voltage must be supplied to avoid saturation if linear operation is to be achieved. Voltages greater than 2V are

7974a

Abstract: 2SD2403
Contextual Info: ïr — ^ — h '> U =1 > h Silicon Transistor 2SD2403 N P N itf^ v T ^ u ^ v U ju r a « : * « « , 2 S D 2 4 0 3 t t /J 't ë fl» a a* 6 U W x '- ÿ ^ ï - * m m z i> ' p m m x ' f v i - x r m t •# U T * U , D C / D C w m m e : m m ) • K 7 < / * £ iî lC » l? T o

sft 322 transistor

Abstract: b322 TRANSISTOR Transistor B322 B082 M106 B321 diode sg 5 ts
Contextual Info: 1DI2OOZ-12O 200a g ± / < 7 — : Outline Drawings y < r7 - b :7 > ' > ^ ^ n . - ) U POWER TRANSISTOR MODULE 13 Z1_29 Features • ftflft/E High Voltage y i) KrtJlS • ASO Excellent Safe Operating Area • •m m Including Free Wheeling Diode Insulated Type

2SD2226K

Abstract: 2SD2351 VEBO-12V
Contextual Info: h 7 >vZ. £ /Transistors 2SD2226K/2SD2351 2SD 2226K 2SD2351 x e $ * y 7 J l ' 7 U - ? B N P N y ,j 3 > b 7 > v Z $ Epitaxial Planar NPN Silicon Transistor —flS 'h it^ iB ig ffl/G e n e ra l Small Signal Amp. * ^ ^ J i & B I / D i m e n s i o n s Unit : mm

2SK2110

Contextual Info: t * — •£? • S ' — NEC h h ^ ^ M O S Field Effect Transistor 2SK2110 2 S K 2 1 1 0 & N 3 1 -V Z J U t i i M O S F E T V S U , « fc : mm 5 V H ;Ü ^ IC < 7 )fc ti r t C J: « * < •> 51> ^ " i i T ' î o *> *£ Î5 W g ;< , * < * y 3 1> 7 ìl]g fc ìli,'£ ò & ,

1DI75E-120

Abstract: M206 B305
Contextual Info: 1DI75E-120 75 a lg ± s < r7 - * ì > z . - ) l ' ’ Outline Drawings POWER TRANSISTOR MODULE Features • MMJ± H igh Voltage • 7 U— KF*3i # • A S O ^ '/ a L' • Îê ÎiflS Including F re e w h e e lin g Diode Excellent Safe Operating Area Insulated Type

FSV 052

Abstract: b195 1-101S
Contextual Info: E V L31-055 iooa POWER TRANSISTOR MODULE : F e a tu re s • 7 U —A U • hFE*’fSV' K rtM Including Free W heeling Diode High DC Current Gain • itfeUJfi Insulated Type • ff liÉ : A p p lic a t io n s Power Sw itching • AC t-i'S J ffll AC Motor Controls

schematic diagram tv sony 21 trinitron

Abstract: cxa2139s CXA2130S IC cxa2139s ic CXA2130S C3807 transistor datasheet sony ic cxa2130s free CXA2139S c3807 power transistor STV5112
Contextual Info: SERVICE MANUAL MODEL COMMANDER DEST. CHASSIS NO. KV-EF34M80 RM-951 SCC-U28D-A Vietnam BG-3S CHASSIS MODEL COMMANDER DEST. CHASSIS NO. TRINITRON COLOR TV KV-EF34M80 RM-951 SPECIFICATIONS Note Power requirements 110-240 V AC, 50/60 Hz Power consumption W Indicated on the rear of the TV

transistor DK qj

Abstract: JKS-45 SE-49
Contextual Info: 5 s— S 7 • 5 /— h Compound Transistor BN1L3N 4# $ fB iU « ^ - j ì '. mm 2.0 + 0.2 0 '< - f T x f f i i a è r t J l L T ^ É l ' o f ( R i = 4.7 k£2, R 2= 10 k£2) 4— 6‘ o 2 4k1 =i > V" >J 9 > 9 'J o BA 1L3N £ (T II a Tè £t = 25 °C ) @

AGC OPA660

Abstract: in6263 transconductance amplifier spice spice model 1n4148 DMF3068A operational amplifier discrete schematic 1n4148 spice model Group-Delay phase filter OTA operational transconductance amplifier pin configuration transistor 2n2907
Contextual Info: OPA OPA660 660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● BASE LINE RESTORE CIRCUITS ● HIGH SLEW RATE: 3000V/µs ● LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.06%/0.02° ● VERSATILE CIRCUIT FUNCTION

ICS8745B-21

Abstract: MS-013 8745BM-21LF
Contextual Info: 1:1 Differential-to-LVDS Zero Delay Clock Generator ICS8745B-21 DATA SHEET General Description Features The ICS8745B-21 is a highly versatile 1:1 LVDS Clock Generator. The ICS8745B-21 has a fully integrated HiPerClockS PLL and can be configured as zero delay buffer,

HA1370

Abstract: high side Solenoid Driver transistor ECG 152 HA13705C Hitachi DSA00177
Contextual Info: HA13705C IPIC Intelligent Power IC High Side Solenoid Driver ADE-207-207 (Z) 1st Edition July 1996 Description The HA13705C is high side power driver IC with protectors and diagnostic function. The device is especially designed to switch inductive loads.

transistor smd 1FT 78

Contextual Info: F Z J S G S -T H O M S O N * 7 i. IBilD gia IILig,inMID(g§ STV2145 l2C BUS CONTROLLED EAST-WEST AND VERTICAL INTERFACE • INTEGRATED VERTICAL SAWTOOTH GEN­ ERATOR WITH AMPLITUDE CONTROL LOOP (50Hz - 60Hz * INTERLACE MODE INTRINSICALLY CON­ TROLLED BY STV2118A

opa1013 equivalent

Abstract: AGC OPA660 2N2907 OPA1013 OPA660 OPA660AP OPA660AU REF200 CCII APPLICATION 0525P
Contextual Info: OPA OPA660 660 OPA 660 Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER AND BUFFER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 850MHz ● BASE LINE RESTORE CIRCUITS ● HIGH SLEW RATE: 3000V/µs ● LOW DIFFERENTIAL GAIN/PHASE ERROR: 0.06%/0.02° ● VERSATILE CIRCUIT FUNCTION

ICS8725-21

Abstract: MS-013 Nippon capacitors
Contextual Info: ICS8725-21 DIFFERENTIAL-TO-HSTL ZERO DELAY CLOCK GENERATOR General Description Features The ICS8725-21 is a highly versatile 1:1 Differentialto-HSTL Clock Generator and a member of the HiPerClockS HiPerClockS™ family of High Performance Clock Solutions from IDT. The CLK, nCLK pair can accept

sot-323 transistor marking code 15

Abstract: ic marking code pk MARKING 3b BC857BWT1G FOR 3B
Contextual Info: BC856BWT1 Series, BC857BWT1 Series, BC858AWT1 Series Preferred Devices General Purpose Transistors http://onsemi.com PNP Silicon COLLECTOR 3 These transistors are designed for general purpose amplifier applications. They are housed in the SC−70/SOT−323 which is

transistor 2sk193

Abstract: 2sk193 2sK193 transistor transistor C982 T460-8525 yx 8001 IVN1
Contextual Info: 7 *— ? • 5/— h ? Junction Field Effect Transistor 2SK193 ft & w r m I D s s * M ' ? < , l y J ^ è ^ O T , 7 / t 2.0±0.2 4.0 ±0. , I d s s =2.5 mA TYP. (V DS=5.0 V, VGS- 0 I y f s I — 3 . 5 m S T Y P . ( V d s ~ 5 . 0 V , I d = 0 . 5 m A , f =

2SD1957

Contextual Info: 2SD1957 /Transistors HS&fj*7°U-/^NPN yi j 3>h7>y^$ 2SD1957 Freq . Power A m p. • 1 B E h F E V>M V; V sjl tt Triple Diffused Planar N P N S ilico n Transistor Dimensions Unit: mm) : hFE = 300 (Typ.)o 2) V ce (sat) VcE (sat)=0.2V (Typ.) M, A V I 0 05 to

b&r b303

Contextual Info: 1DI5OH-12O 50a • O utline D rawings POWER TRANSISTOR MODULE : F e a tu re s • S ltfE High Voltage • 7>J— U K l * 3 i • A S O A ''i£ i.' • ü ê lU fi Including Free W heeling Diode Excellent Safe Operating Area Insulated Type : A p p lic a tio n s