N50G Search Results
N50G Price and Stock
Torex Semiconductor LTD XC6129N50G7R-GVoltage Supervisor, 5V, 1.3 V to 6 V, Open-Drain, USPN, 4 Pins, Surface Mount, -40 ?C - Tape and Reel (Alt: XC6129N50G7R-G) |
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XC6129N50G7R-G | Tape & Reel | 16 Weeks | 5,000 |
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Amphenol Corporation ELVH-MN50G-HAND-C-PAA5BOARD MOUNT PRESSURE SENSOR -500 MBAR G ANLID DLEAD C PAA5 - Rail/Tube (Alt: ELVH-MN50G-HAND-C-PAA5) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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ELVH-MN50G-HAND-C-PAA5 | Tube | 14 Weeks | 10 |
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Torex Semiconductor LTD XC6127N50G7R-GVoltage Supervisor, 5V, 0.7 V to 6 V, Open-Drain, USPN, 4 Pins, Surface Mount, 100 ms, -40 ?C - Tape and Reel (Alt: XC6127N50G7R-G) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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XC6127N50G7R-G | Tape & Reel | 16 Weeks | 5,000 |
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Torex Semiconductor LTD XC6127N50GMR-GVoltage Supervisor, 5V, 0.7 V to 6 V, Open-Drain, SOT-25, 4 Pins, Surface Mount, 100 ms, -40 ?C - Tape and Reel (Alt: XC6127N50GMR-G) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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XC6127N50GMR-G | Tape & Reel | 16 Weeks | 3,000 |
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Torex Semiconductor LTD XC6129N50G9R-GVoltage Supervisor, 5V, 1.3 V to 6 V, Open-Drain, USPQ-4B05, 4 Pins, Surface Mount, -40 ?C - Tape and Reel (Alt: XC6129N50G9R-G) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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XC6129N50G9R-G | Tape & Reel | 16 Weeks | 5,000 |
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N50G Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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n50gContextual Info: 4 7 REVISIONS ISS ZONE DE5CRIPTIGN\PER REQUE5T\DATE 4-01. F F E E R ECOMMENDE D MOUNTING HOLE PCB MOUNTING HOLE D C 44X0 PAH EL THICKNESS = 3 m m D IM E N S IO N S ARE IN M IL L IM E T E R S O T H E R W IS E A NUT BRASS NICKEL 1 RN10 8 —9 —05X235 4 LOCK RING |
OCR Scan |
1566251m1date--05x235cp16aam01ans16abe02a+3 | |
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Contextual Info: UNISONICTECHNOLOGIESCO., LTD 14N50 Preliminary Power MOSFET 1 4 A, 5 0 0 V N -CH AN N EL POWER M OSFET ̈ DESCRI PT I ON The UTC 14N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize and provide lower on-state resistance and |
Original |
14n50o-263 |