TRANSISTOR 3BT Search Results

Contextual Info: Philips Semiconductors bbS3^31 DD315^I1 3bT WMAPX Product specification PNP 4 GHz wideband transistor BFQ54T N A PIER PHILIPS/DISCRETE b^E J> PINNING DESCRIPTION PNP transistor in a plastic SOT37 package. PIN 1 base It is primarily intended for use in MATV and microwave amplifiers

BFQ34T

Abstract: BFQ54T philips MATV amplifiers 25c2570 Philips MBB MBB339 638 transistor
Contextual Info: Philips Semiconductors bbS3^3]i 0 0 3 1 5 ^ 1 3bT BBAPX Product specification PNP 4 GHz wideband transistor ^ ^ N DESCRIPTION A ME R BFQ54T P H IL IP S /D IS C R E T E b^E ]> PINNING PNP transistor in a plastic SOT37 package. PIN It is primarily intended for use in

BLw76a

Abstract: BLW76 BD433 74412
Contextual Info: N AMER PHILIPS/DISCRETE b*ìE » • hb53T31 D a E ^ b b 772 ■ APX tSLW 76 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-AB or class-B operated high power transm itters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear am­

RCA H 541

Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Contextual Info: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK

Contextual Info: TLP733,734 GaAs IRED a PHOTO-TRANSISTOR TLP733 OFFICE M ACHINE. HOUSEHOLD USE EQUIPM ENT. SOLID STATE R ELA Y. SWITCHING POW ER SUPPLY. The TOSHIBA TLP733 and TLP734 consist of a photo-transistor optically coupled to a gallium arsenide infrared em itting diode in a

TT 2222

Contextual Info: N AMER PHIL IPS/D ISCR ETE btiS3T31 DDSTOMS STb I IAPX B LV 45/12 b'lE D V.H.F. POW ER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 175 MHz communications band. Features • multi-base structure and emitter-ballasting resistors fo r an optimum temperature profile

B5G1

Abstract: BSS138
Contextual Info: National May 1995 Semiconductor~ BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. These products

transistor 3bt

Abstract: marking 3ft sot323 MARKING 3Ft SOT-23-6 marking 3ft 3BT MARKING BC857BW 3Ft transistor BC856BW
Contextual Info: Central BC856W SERIES BC857W SERIES TM Semiconductor Corp. SURFACE MOUNT SUPERminiTM PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BC856W and BC857W Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface

Transistor 78 L 05

Abstract: 2N2223A 2N2453 2N2453A 2N2639 2N2919 2N2642 2N2060 2N2223 2N2480A
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL DUAL NPN TRANSISTOR TO-78 PACKAGE TO-78 Jgr / DEVICE TYPE 2N2060 2N2223 2N2223A 2N2453 2N2453A 2N2480A 2N2639 2N2640 2N2641 2N2642 2N2643 2N2644 2N2652 2N2652A 2N2721 2N2722 2N2903 2N2915 2N2916 2N2917 2N2918 2N2919 2N2920

transistor 3bt

Contextual Info: KSR1006 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interface circuit TO -92 Driver circuit • Built in bias Resistor (R,=10Kil, R2=47KR) • Com plement to KSR2006 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

2N2919

Abstract: 2N2642
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL DUAL NPN TRANSISTOR TO-78 PACKAGE TO-78 JEt 7 DEVICE TYPE 2N2060 2N2223 2N2223A 2N2453 2N2453A 2N2480A 2N2639 2N2640 2N2641 2N2642 2N2643 2N2644 2N2652 2N2652A 2N2721 2N2722 2N2903 2N2915 2N2916 2N2917 2N2918 2N2919 2N2920

Contextual Info: SIEM ENS BCR 35PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (Rj=10kiJ, F<2=47kQ) Tape loading orientation

BCX71RG

Abstract: BCW61RA BCW61RD BCW61 BCX71 BCW61R transistor marking bh ra BCW60 BCW61A BCW61B
Contextual Info: ITT SEMICON] / INTERMETALL SOE » 4bfl2711 D002L00 714 BCW 61, BCX71 PNP Silicon Epitaxial Planar Transistor for switching and AF am plifier applications. H Especially suited for automatic insertion in thick- and thin-film circuits. The transistors BCW61 are subdivided into the groups A, B,

131 Transistor

Abstract: TRANSISTOR 2SC 2SC4649 2SC2059K 2SC4099 SC-75 T106 T146 transistor 3bt marking 1F SMT3
Contextual Info: 2SC2059K 2SC4099 2SC4649 Transistor, NPN Features • available In SMT3 SMT, SC-59 , UMT3 (UMT, SC-70), and EMT3 (EMT, SC-75) packages • package marking: 2SC2059K, 2SC4099,2SC4649; J-*, where ★ is hFE code • high transition frequency, typically fT = 500 MHz at 1 mA

SmD TRANSISTOR 42T

Abstract: smd 42t
Contextual Info: SIEMENS BUZ 100 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/df rated • Ultra low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type Vbs >D ffDS on Package Ordering Code BUZ100

iw 1688

Abstract: 7812 philips 227 1112 2t6 551 BFR540 BFS540 UBC870 TRANSISTOR D 1765 738 transistor BF 697 Transistor MJE 5331
Contextual Info: Philips Semiconductors 0 0 3 2 0 b ti 5^7 • APX Product specification NPN 9 GHz wideband transistor BFS540 N AUER PHILIPS/DISCRETE FEATURES b^E » 1 PIN CONFIGURATION PIN • High power gain DESCRIPTION Code: N4 • Low noise figure • High transition frequency

STT 3 SIEMENS

Abstract: TRANSISTOR 2FE ScansUX7 C67078-A3209-A2
Contextual Info: SIEMENS BUZ 384 SIPMOS Power Transistor • N channel • Enhancement mode • FREDFET Type BUZ 384 Vds 500 V DS on 10.5 A 0.6 w Package Ordering Code TO-218AA C67078-A3209-A2 Maximum Ratings Parameter Symbol Drain source voltage ^DS V DGR Drain-gate voltage

BCW61RA

Abstract: bcx71 bcx71rh BCX71C BCW60
Contextual Info: ITT seuicond/ intermetall SGE D 4bô2711 D002bGQ 714 BCW61, BCX71 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. i i” n is 1 ! 4H P- Especially suited for automatic insertion in thick- and thin-film circuits. The transistors BCW61 are subdivided into the groups A, B,

N1702

Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922
Contextual Info: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961

Contextual Info: 7 1 1 0 0 2 b O C I b ^m a Philips Sem iconductors 2T2 RHIN Product specification NPN 6 GHz wideband transistor FEATURES BFR93A PINNING PIN DESCRIPTION • High power gain • Low noise figure • Very low intermodulation distortion 1 base 2 emitter • PNP complement is the BFT93.

transistor 3bt

Abstract: marking 3ft sot323 transistor 3et transistor 3Ft 3Ft sot marking code 200a 3Ft transistor BC857BW BC856BW
Contextual Info: BC856W SERIES BC857W SERIES SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BC856W and BC857W Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package,

AN5296 Application of the CA3018 Integrated

Abstract: TA618 ca3083 relay ts4 harris transistors transistor 102 CA3183 transistor 9-t TA6183 DARLINGTON TRANSISTOR ARRAY
Contextual Info: HARRIS SEflICOND SECTOR blE D • 43DP271 004703S bSG H H A S CA3146, CA3183 33 H a r r i s S E M I C O N D U C T O R ■ W » W W High-Voltage Transistor Arrays March 1993 Features Description • Matched General Purpose Transistors • VBE Matched ±5mV Max

C4023

Abstract: STP40N05 STP40N05FI GC286
Contextual Info: 7 cî2cî237 0 0 m 34bT T B 1? • S G T H SGS-THOMSON STP40N05 STP40N05FI üO T@ KS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP40N05 STP40N05FI ■ . ■ ■ . ■ ■ . V dss R öS on Id 50 V 50 V < 0.035 Q < 0.035 Q 40 A 23 A TYPICAL RDS(on) = 0.03 i l

Contextual Info: r z Ä 7 S C S - T H O T # M S O N r a ig ^ lIU lC T ^ O iD iE l S T B 7 N A 4 0 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STB7NA40 V dss RDS on Id 400 V < 1Q 6.5 A . . . . • . . . TYPICAL Ros(on) = 0.82 £2 ± 30V GATE TO SOURCE VOLTAGE RATING