TRANSISTOR 3BS Search Results

3BS transistor

Abstract: S0642
Contextual Info: rz 7 ^ 7# SGS-THOMSON R L ie r a « S 0 6 4 2 SMALL SIGNAL NPN TRANSISTOR Type Marking SO 642 N91 . SILICON EPITAXIAL PLANAR NPN TRANSISTOR . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . HIGH VOLTAGE TRANSISTOR FOR VIDEO AMPLIFIER

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

BD722

Abstract: BD720 B0719 BD440 BD719 BD724 BD726 transistor 3bs NPN, Si, POWER TRANSISTOR, PLASTIC
Contextual Info: BD720 BD722 BD724 BD726 J SILICON EPITAXIAL-BASE POWER TRANSISTOR PNP transistor in a S O T3 2 plastic envelope intended fo r use in audio output and general purpose am plifier applications. BD 720 is equivalent to BD 440. NPN complements are B D 719; 721; 723 and

3BS transistor

Abstract: marking 3bs transistor 3bs 3bs marking code 3BS MARKING sot323 transistor marking BL SOT323 BC856W BC857W BC858W
Contextual Info: BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor BC856W/BC857W/BC858W FEATURES z Ideally suited for automatic insertion. z Power dissipation. PC=200mW Pb Lead-free APPLICATIONS z General purpose switching and amplification application.

AT-60585

Abstract: AT60585 Silicon Bipolar Transistor Silicon Bipolar Transistor Hewlett-Packard 3BS transistor
Contextual Info: HE W LET T-PACKARD/ CMPNTS blE D • 44475Ö4 □ D D tìflb4 3bS H H P A AT-60585 Up to 6 GHz Low Noise Silicon Bipolar Transistor T h a t HEW LETT mLEM PA C K AR D 85 Plastic Package Features • • Low Bias Current Operation Low Noise Figure: 1.4 dB typical at 1.0 GHz

BU508A

Abstract: BU508D philips bu508a BY223 diode BY223 transistor BU508D bu50ba BY22B BU508D transistor transistor AS 431
Contextual Info: Product specification Philips Semiconductors BU508A; BU508D Silicon diffused power transistors High-voltage, high-speed switching npn transistor in SOT93A envelope intended for use in horizontal deflection circuits of colour television receivers. The BU508D has an integrated efficiency diode.

Contextual Info: International TGR Rectifier PD-9.1585A IRG4PC40K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features * Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10ms @ 125°C, VGe = 15V

motorola PB 1000

Abstract: J634 3BSC
Contextual Info: Order this data sheet MOTOROLA by MRF10031H/D SEMICONDUCTOR TECHNICAL DATA MRF10031H’ Microwave Pulse Power Transistor 30 Watts Peak NPN 960-1215 MHz CPTO Designed for 960-1215 MHz pulse common base amplifiers. • Guaranteed Performance at 960 MHz, 36 Vdc

MARKING 3FS

Abstract: MARKING CODE 21E SOT23 marking 3ks
Contextual Info: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN 1 2006-09-29

Contextual Info: ^ Philips Components Data sheet status Prelim inary specification date of issue March 1991 P H I L IP S N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies

MARKING 3FS

Abstract: marking 3bs BC846 Infineon BC857 3fs BC857BL3 BC860BW BC856A BC856B BC856BW BC857A
Contextual Info: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN • Pb-free (RoHS compliant) package1)

TLP1240

Contextual Info: INFRARED LED + PHOTO TRANSISTOR TLP1240 C5 (TLP1240(C 5)> COPIER, PAGE PRINTIR, FACSIMILE FAN-HEATER, AIR CONDITIONER TERMINAL EQUIPMENT IN BANKING FACILITIES GAME MACHINE TLP1240 (C5) is a compact photo in te rru p ter w ith attached connector which uses a hig h -rad ian t

3BS transistor

Abstract: transistor 3bs 846T BC856AT BC856BT BC856T SC75 transistor BC 109 Data
Contextual Info: BC856T PNP Silicon AF Transistor Preliminary data 3
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Complementary types: BC 846T 2 1 Type Marking Pin Configuration BC856AT 3As 1=B 2=E 3=C SC75

3BS transistor

Contextual Info: BC856T PNP Silicon AF Transistor Preliminary data 3
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Complementary types: BC 846T 2 1 Type Marking Pin Configuration BC856AT 3As 1=B 2=E 3=C SC75

transistor packing code 3f

Abstract: marking 3ks BC856B BC856BW BC857A BC857AW BC846 BC850 BC856 BC856A
Contextual Info: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN • Pb-free (RoHS compliant) package 1)

top marking 1B sot23

Abstract: marking 3bs 3bs marking code BC856-BC860 3BS MARKING MARKING 3gs marking 3Ls SOT23 3ks 3Fs marking transistor 3Fs sot23
Contextual Info: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN • Pb-free (RoHS compliant) package 1)

TTPC

Abstract: BUK474-500B rm3 transistor BUK474
Contextual Info: Philips Components Data sheet status Preliminary specification date of issue March 1991 INTERNATIONAL N -channel en han cem en t m ode field-effect pow er transistor in a plastic full-pack envelope. T h e device is intended for use in Switched M ode P ow er Supplies

3BS transistor

Abstract: BD937F b0933 BD935F BD939F 935F BD935 d941 BD933F BD934F
Contextual Info: BD933F; BD935F BD937F; BD939F _ _ _ _BD941F _ PHILIPS I N T E R N A T I O N A L SbE D m 711002b 0043G52 3=12 « P H I N -SILICON EPITAXIAL POWER TRANSISTORS 7^ -J 3 ~ ô '7 ' NPN silicon power transistor ina SOT186 envelope with an electrically insulated mounting base,

2SC509

Abstract: 2SA509 4687 transistor 2SA509-Y transistor 4687 2sa509 transistor 2SA509Y 2sc509 transistor RH-16 Produced by Perfect Crystal Device Technology
Contextual Info: 2/UD>PNPItr^2/?;i/»h5>5?^ PCTÄÄ ^ ^ L IC O N o & mantas m m o Audio Power Amplifier Applications b PNP EPITAXIAL TRANSISTOR (PCT PROCESS) Wl? v-y ^ 7 *-r; m 2SC509 i a v 7 V / v f y fri b -* -t ; 1 Watt Amplifier Applications Complementary to 2SC509 M ±

transistor BD939F

Abstract: d941 935F b0933 939f 939-F BD-939F 937f BD941F BD939F
Contextual Info: BD933F; BD935F BD937F; BD939F BD941F PHILIPS INTE RNATIONAL SbE D • TllüûSb 00M3052 S^E ■ P H I N SILICON EPITAXIAL POWER TRANSISTORS T -J 3 -0 T NPN silicon power transistor ina SO T186 envelope w ith an electrically insulated mounting base, intended fo r use in audio o utpu t stages and fo r general purpose am plifier applications.

2SB1628

Contextual Info: = r-5 > • S / - h y ' J a > h 7 > y X ^ Silicon Transistor 2 S 1 B 6 2 8 P N P X fcf£ 3r V 2SB16 2 8 ? M ' *'* e>* 1 / ; ^ * : £ ^ fl-JfclS ÜM£ : mm U T -fe U , DC / DC =l > • K 7 < A - 4 '^ ( r S S T 'T c , 1.5±0.1 n AM +0 .0 3 U . 4 1 - 0 .0 5

7423PC

Abstract: 00k3
Contextual Info: NATIONAL SEflICOND { L O G I C } DEE D I bSGUEE □ □t>3bSö S 23 I T -^ -/r C O N N E C T IO N D IA G R A M P IN O U T A 54/7423 EXPANDABLE DUAL 4-IN PU T NOR GATE W ith Strobe O R D E R IN G C O D E : See Section 9 PIN PKG S OUT C O M M E R C IA L G RADE

Contextual Info: SANYO SEMI CONDUCTOR I Ordering n u m b e r: EN4188 CORP S3E ] • 7 cî tî 7 G 7 b G01G1SD 3bS ■ TS AJ | T—52—13—25 Monolithic Digital IC LB1855M No.4188 i 3-Phase Brushless Motor Driver The LB18S5M is a 3-phase brushless motor driver 1C ideally suited for use in VCR drum motor driver.

3BS transistor

Contextual Info: BCR 400 Preliminary Data Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation • Low voltage drop of 0.7V Application notes • Stabilizing bias current of NPN transistors and FET's from