2SB16 Search Results

2SB1657

Contextual Info: Inchange Semiconductor Product Specification 2SB1657 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Low collector saturation voltage ・High DC current gain APPLICATIONS ・For audio frequency amplifier and switching applications PINNING

2SB1657

Contextual Info: JMnic Product Specification 2SB1657 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Low collector saturation voltage ・High DC current gain APPLICATIONS ・For audio frequency amplifier and switching applications PINNING PIN DESCRIPTION

2SD2494

Abstract: 2SB1625
Contextual Info: Product Specification www.jmnic.com Silicon NPN Darlington Power Transistors 2SD2494 ・ DESCRIPTION ・With TO-3PML package ・Complement to type 2SB1625 APPLICATIONS ・Audio, ・Series regulator ・General Purpose PINNING PIN DESCRIPTION 1 Base 2 Collector

2SD2495

Abstract: 2SB1626
Contextual Info: Product Specification www.jmnic.com Silicon NPN Darlington Power Transistors 2SD2495 DESCRIPTION ・With TO-220F package ・Complement to type 2SB1626 APPLICATIONS ・For audio,series regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base

2SB1647

Abstract: 2SD2560
Contextual Info: JMnic Product Specification Silicon PNP Darlington Power Transistors 2SB1647 DESCRIPTION ・With TO-3PN package ・Complement to type 2SD2560 APPLICATIONS ・Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base

Contextual Info: 2SB1694 Transistors General purpose amplification −30V, −1A 2SB1694 2.0 1.3 0.9 (1) (2) 0.65 0.65 (3) 0.3 0.7 zDimensions (Units : mm) zApplication Low frequency amplifier Driver 1.25 zFeatures 1) A collector current is large. 2) Collector saturation voltage is low.

2SB1607

Abstract: 2SD2469
Contextual Info: Inchange Semiconductor Product Specification 2SB1607 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Large collector current IC ・Low collector saturation voltage. ・Complement to type 2SD2469 APPLICATIONS ・For power switching applications

2SB1643

Contextual Info: Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB1643 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1

2SD2560

Abstract: 2SB1647 pnp 10A 12v 10a regulator ic
Contextual Info: Inchange Semiconductor Product Specification 2SB1647 Silicon PNP Darlington Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2SD2560 APPLICATIONS ・Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to

Contextual Info: Product specification 2SB1628 Features High current capacitance. Low collector saturation voltage. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector to Base Voltage Parameter VCBO -20 V Collector to Emitter Voltage VCEO -16 V Emitter to Base Voltage

B1667

Abstract: 2SB1667
Contextual Info: 2SB1667 SM 東芝トランジスタ シリコンPNP三重拡散形 2SB1667(SM) ○ 低周波電力増幅用 • 単位: mm 飽和電圧が低い。 : VCE (sat) = −1.7 V (最大) (IC = −3 A, IB = −0.3 A) 絶対最大定格 (Ta = 25°C) 項 目 記 号

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1679G Silicon PNP epitaxial planar type For low-frequency amplification • Package • Large collector output capacitance (Common base, input open circuited) Cob • Low collector-emitter saturation voltage VCE(sat)

2SB1606

Contextual Info: SavantIC Semiconductor Product Specification 2SB1606 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Large collector current IC ·Low collector saturation voltage. ·Good linearity of hFE APPLICATIONS ·For power switching applications PINNING

2SB1603

Abstract: 2SB1603A
Contextual Info: SavantIC Semiconductor Product Specification 2SB1603 2SB1603A Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Low collector saturation voltage ·High speed switching APPLICATIONS ·For low-voltage switching applications PINNING PIN DESCRIPTION

2SB1604

Abstract: 2SB1604A
Contextual Info: SavantIC Semiconductor Product Specification 2SB1604 2SB1604A Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Low collector saturation voltage ·High speed switching APPLICATIONS ·For low-voltage switching applications PINNING PIN DESCRIPTION

2SB1658

Contextual Info: SavantIC Semiconductor Product Specification 2SB1658 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Low collector saturation voltage ·High DC current gain APPLICATIONS ·For audio frequency amplifier and switching applications PINNING PIN

2SB1657

Contextual Info: SavantIC Semiconductor Product Specification 2SB1657 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Low collector saturation voltage ·High DC current gain APPLICATIONS ·For audio frequency amplifier and switching applications PINNING PIN

Contextual Info: TO SHIBA 2SD2462 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2462 PO W ER AM PLIFIER APPLICATIONS. • High DC Current Gain ; hpg i = 800~3200 Low Collector Saturation Voltage : VCE(sat) = °-4V (Typ.) Complementary to 2SB1602 • • M A X IM U M RATINGS (Ta = 25°C)

LE50

Abstract: 2SB1370 2SB1565 2SB1655 B303
Contextual Info: 2SB1370 2SB1655/ 2SB1565 Transistors I Power Transistor 60V, —3A 2S B 1370 • A b s o l u t e m a x im u m r a tin g s •F e a tu re s 1 ) Low saturation voltage, typically VcE(sat) = — 0 . 3 V at le / Ib = —2A / - 0 .2 A . 2 ) Excellent DC curre nt gain characteristics.

Contextual Info: Transistor 2SD2474 Silicon NPN epitaxial planer type For low-frequency amplification Complementary to 2SB1612 Unit: mm +0.1 1.0–0.2 0.4±0.08 2.5±0.1 45° +0.25 0.4max. Low collector to emitter saturation voltage VCE sat . Mini Power type package, allowing downsizing of the equipment

Hitachi DSA001650

Contextual Info: 2SB1661L, 2SB1661S Silicon PNP Triple Diffused Low Frequency Amplifier 1st. Edition December 1997 Target Specification Features • High voltage : V BR CEO = –300V min. Outline DPAK 4 4 1 2 1 2 3 3 1. Base 2. Collector 3. Emitter 4. Collector 2SB1661L, 2SB1661S

2SB1694

Abstract: T106
Contextual Info: 2SB1694 Transistors General purpose amplification −30V, −1A 2SB1694 2.0 1.3 0.9 (1) (2) 0.65 0.65 (3) 0.3 0.7 zExternal dimensions (Unit : mm) zApplication Low frequency amplifier Driver 1.25 zFeatures 1) A collector current is large. 2) Collector saturation voltage is low.

B1667

Abstract: 2SB1667 W301
Contextual Info: 2SB1667 SM TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1667(SM) Audio Frequency Power Amplifier Applications • Unit: mm Low saturation voltage: VCE (sat) = −1.7 V (max) (IC = −3 A, IB = −0.3 A) Maximum Ratings (Ta = 25°C) Characteristics

2SB1676

Abstract: 2SD2618 doide base, collector, emitter
Contextual Info: 2SD2618 Transistors Power Transistor 80V, 4A 2SD2618 !Circuit diagram !Features 1) Darlington connection for a high hFE. 2) Built-in resistor between base and emitter. 3) Built-in damper doide. 4) Complements the 2SB1676. C B R E R B C E 300Ω : Base : Collector