2SB1658 Search Results

2SB1658

Contextual Info: SavantIC Semiconductor Product Specification 2SB1658 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Low collector saturation voltage ·High DC current gain APPLICATIONS ·For audio frequency amplifier and switching applications PINNING PIN

Contextual Info: 2SB1658 Plastic-Encapsulate Transistors PNP Features TO-126 Power dissipation PCM: 1 W Tamb=25℃ Collector current ICM: -5 A Collector-base voltage -30 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1. EMITTER 2. COLLECTOR 3. BASE

2sb1658

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SB1658 TRANSISTOR PNP TO-126 FEATURES Power dissipation PCM: 1 W (Tamb=25℃) 1. EMITTER Collector current -5 A ICM: Collector-base voltage -30 V V(BR)CBO: Operating and storage junction temperature range

2SB1658

Abstract: 2SB16
Contextual Info: JMnic Product Specification 2SB1658 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Low collector saturation voltage ・High DC current gain APPLICATIONS ・For audio frequency amplifier and switching applications PINNING PIN DESCRIPTION

2SB1658

Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1658 DESCRIPTION •High Collector Current -IC= -5A ·High DC Current Gain: hFE= 150~600@IC= -1A ·Low-Collector Saturation Voltage: VCE sat = -0.15V(Max.)@IC= -1A APPLICATIONS

2SB1658

Contextual Info: Inchange Semiconductor Product Specification 2SB1658 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Low collector saturation voltage ・High DC current gain APPLICATIONS ・For audio frequency amplifier and switching applications PINNING

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SB1658 TRANSISTOR PNP TO – 126 FEATURES z Low VCE(sat) z High DC Current Gain 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol

d1063

Abstract: 2SB1658 C10535E C10943X MEI-1202 D10630EJ1V0DS00
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SB1658 AUDIO FREQUENCY AMPLIFIER, SWITCHING PNP SILICON EPITAXIAL TRANSISTORS FEATURES • Low VCE sat VCE(sat) = −0.15 V Max (@lC/lB = 1.0 A/50 mA) Collector to Base Voltage Collector to Emitter Voltage VCB0 VCE0 −30 V

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SB1658 TRANSISTOR PNP TO-252-2L FEATURES z Low VCEsat VCEsat=-0.15V Max(IC/IB=1.0A/50mA) z High DC Current gain hEF=150 to 600(VCE= -2V, IC= -1A) 1.BASE 2.COLLECTOR

2SB1658

Contextual Info: 2SB1658 2SB1658 TRANSISTOR PNP TO-126 FEATURES Power dissipation PCM: 1 W (Tamb=25℃) 1. EMITTER Collector current ICM: -5 A Collector-base voltage -30 V V(BR)CBO: Operating and storage junction temperature range 2. COLLECTOR 3. BASE 123 TJ, Tstg: -55℃ to +150℃

d1063

Abstract: 2sb1658 C10535E C10943X MEI-1202
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

secos gmbh

Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers

2SK2500

Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Contextual Info: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose

secos gmbh

Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3

THINKI transistor catalog

Abstract: audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747
Contextual Info: THINKI TRANSISTOR CATALOG Power Transistors For Audio Power Amplifier PC IC Vceo W (A) (V) Model Vcbo Vebo (V) (V) Vce(sat) hFE fT (V) VCE(V) IC(A) max IC(A) (MHz) Package Function TYP IB(A) 1 -0.05 -150 2SA914 -150 -5 90-450 -5 -0.01 -1 -0.03 -0.003