2SB1667 Search Results

B1667

Abstract: 2SB1667
Contextual Info: 2SB1667 SM 東芝トランジスタ シリコンPNP三重拡散形 2SB1667(SM) ○ 低周波電力増幅用 • 単位: mm 飽和電圧が低い。 : VCE (sat) = −1.7 V (最大) (IC = −3 A, IB = −0.3 A) 絶対最大定格 (Ta = 25°C) 項 目 記 号

B1667

Abstract: 2SB1667 W301
Contextual Info: 2SB1667 SM TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1667(SM) Audio Frequency Power Amplifier Applications • Unit: mm Low saturation voltage: VCE (sat) = −1.7 V (max) (IC = −3 A, IB = −0.3 A) Maximum Ratings (Ta = 25°C) Characteristics

Contextual Info: 2SB1667 SM TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1667(SM) Audio Frequency Power Amplifier Applications • Unit: mm Low saturation voltage: VCE (sat) = −1.7 V (max) (IC = −3 A, IB = −0.3 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics

B1667

Abstract: 2SB1667
Contextual Info: 2SB1667 SM TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1667(SM) Audio Frequency Power Amplifier Applications • Unit: mm Low saturation voltage: VCE (sat) = −1.7 V (max) (IC = −3 A, IB = −0.3 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics

2SB1667

Contextual Info: TO SH IBA 2SB1667 SM TO SH IB A TRANSISTO R SILICON PNP TRIPLE DIFFUSED TYPE 2SB1 6 6 7 ( S M ) Unit in mm A U D IO FREQUENCY PO W ER AM PLIFIER APPLICATIO NS • Low Collector Saturation Voltage : VcE(sat) = -1 .7 V (Max.) (IC = - 3 A, IB = -0 .3 A) 10.3M A X.

2SB1667

Contextual Info: TOSHIBA 2SB1667 SM TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2SB1 6 6 7 ( S M ) Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS • Low Collector Saturation Voltage : VCE(sat) = -1 .7 V (Max.) (IC = -3 A , IB = -0 .3 A) 10.3MAX. 1.32 •H*

Contextual Info: 2SB1667 SM TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1667(SM) Audio Frequency Power Amplifier Applications • Unit: mm Low saturation voltage: VCE (sat) = −1.7 V (max) (IC = −3 A, IB = −0.3 A) Maximum Ratings (Ta = 25°C) Characteristics

Contextual Info: TOSHIBA 2SB1667ÇSM T O SH IBA TRA NSISTO R SILICON PNP TRIPLE DIFFUSED TYPE 2SB1 6 6 7 S M ) Unit in mm A U D IO FREQUENCY P O W ER A M PLIFIER APPLICATIO NS • Low Collector Saturation Voltage : VCE (sat) = -1 .7 V (Max.) (IC = - 3 A, IB = -0 .3 A) M A X IM U M RATINGS (Ta = 25°C)

2SB1667

Contextual Info: Transistors SMD Type Silicon PNP Triple Diffused Type 2SB1667 TO-252 +0.1 0.80-0.1 +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 2.30 0.127 max 3 .8 0 +0.8 0.50-0.7 +0.15 5.55 -0.15 +0.15 1.50 -0.15 +0.15 0.50 -0.15 +0.2 9.70 -0.2 Low collector saturation voltage. Unit: mm

B1667

Abstract: 2SB1667
Contextual Info: 2SB1667 SM 東芝トランジスタ シリコンPNP三重拡散形 2SB1667(SM) ○ 低周波電力増幅用 • 単位: mm 飽和電圧が低い。 : VCE (sat) = −1.7 V (最大) (IC = −3 A, IB = −0.3 A) 絶対最大定格 (Ta = 25°C) 項 目 記 号

Contextual Info: Product specification 2SB1667 TO-252 +0.1 0.80-0.1 +0.1 0.60-0.1 2.3 2.30 0.127 max 3 .8 0 +0.8 0.50-0.7 +0.15 5.55 -0.15 +0.15 1.50 -0.15 +0.15 0.50 -0.15 +0.2 9.70 -0.2 Low collector saturation voltage. Unit: mm +0.1 -0.1 +0.25 2.65 -0.1 6.50 +0.2 5.30-0.2

B1667

Abstract: 2SB1667 GENERAL SEMICONDUCTOR MARKING SM
Contextual Info: 2SB1667 SM TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1667(SM) Audio Frequency Power Amplifier Applications • Unit: mm Low saturation voltage: VCE (sat) = −1.7 V (max) (IC = −3 A, IB = −0.3 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics

Contextual Info: 2SB1667 SM TO SHIBA TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2SB1 6 6 7 ( S M ) Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS • Low Collector Saturation Voltage : VCE(sat) = -1 .7 V (Max.) (IC = -3 A , IB = -0 .3 A) MAXIMUM RATINGS (Ta = 25°C)

2sb 667

Abstract: 2SB1667
Contextual Info: 2SB1667 SM TO SH IBA TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2SB1 6 6 7 ( S M ) Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS • Low Collector Saturation Voltage : VcE(sat) = -1 .7 V (Max.) (IC = -3 A , IB = -0 .3 A) 10.3MAX. 1.32 •H*

2SB1667

Abstract: transistor sm
Contextual Info: 2SB1667 SM TO SH IBA TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2SB1 6 6 7 ( S M ) Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS • Low Collector Saturation Voltage : VcE(sat) = -1 .7 V (Max.) (IC = -3 A , IB = -0 .3 A) 10.3MAX. 1.32 •H*

Contextual Info: TO SH IB A TENTATIVE 2SB1667 SM TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2SB1 6 6 7 ( S M ) Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS Low Collector Saturation Voltage : VCE (sat) = —1.7V (Max.) (IC = - 3 A , Iß — —0.3A) MAXIMUM RATINGS (Ta = 25°C)

smd transistor h2a

Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Contextual Info: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

2SA1941 amp circuit

Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
Contextual Info: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including

2sC5200, 2SA1943

Abstract: TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N
Contextual Info: 製品カタログ 2010-4 東芝半導体 製品カタログ パワートランジスタ h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 東芝パワートランジスタについて 機能別・用途別選択早見表 • · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 4

2SA1930 2sc5171

Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
Contextual Info: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228

GT45F122

Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ