TRANSISTOR 356 J Search Results

Contextual Info: SIEMENS BUZ 356 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 356 Vbs 800 V h ^DS on Package Ordering Code 5.3 A 2w TO-218AA C67078-S3108-A2 Maximum Ratings Parameter Symbol Continuous drain current Values Unit

transistor 356 j

Abstract: transistor 356 b
Contextual Info: SIEMENS BUZ 356 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 356 Vbs 800 V h 5.3 A ^DSion Package Ordering Code 2H TO-218 AA C67078-S3108-A2 Maximum Ratings Parameter Symbol Continuous drain current Values b 5.3

C67078-S3108-A2

Contextual Info: BUZ 356 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 356 800 V 5.3 A 2Ω TO-218 AA C67078-S3108-A2 Maximum Ratings Parameter Symbol Continuous drain current

C67078-S3108-A2

Contextual Info: BUZ 356 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 356 800 V 5.3 A 2Ω TO-218 AA C67078-S3108-A2 Maximum Ratings Parameter Symbol Continuous drain current

BUK444

Abstract: BUK444-800A BUK444-800B YA11
Contextual Info: PHILIPS INTERNATIONAL fc.SE D • 7110fl2b DDt,3^fll 356 ■ PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

Contextual Info: TO SHIBA 2SA1356 2 S A 1 356 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. • Low Saturation Voltage : VCE(sat) = - 0.32V (Typ.) (IC = - 500mA, IB = - 50mA) High Collector Power Dissipation : P q = 1.2W (Ta = 25°C)

2SA1356

Abstract: 2SC3419 2sc341 2SA135
Contextual Info: 2SA1356 TO SH IBA 2 S A 1 356 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. • • • Low Saturation Voltage : VcE(sat) = -0.32V (Typ.) (IC = - 500mA, IB = -50m A ) High Collector Power Dissipation : P 0 = 1.2W(Ta = 25°C)

A1356 transistor

Abstract: A1356 2SA1356 2SC3419
Contextual Info: TOSHIBA 2SA1356 2 S A 1 356 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO PO W ER AM PLIFIER APPLICATIONS. • 8.3MAX. . 5.8 Low Saturation Voltage : VcE(sat) = -0.32V (Typ.) (IC = - 500mA, IB =-50m A ) High Collector Power Dissipation : P0 = 1.2W(Ta = 25°C)

2SA1356

Abstract: 2SC3419
Contextual Info: 2SA1356 TO SH IBA 2 S A 1 356 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS 8.3 MAX. • • • Low Saturation Voltage : VCE(sat)“ —0.32V (Typ.) (In = -500m A, IB = -50m A) High Collector Power Dissipation : P 0 = 1.2W(Ta = 25°C)

Contextual Info: TOSHIBA 2SA1356 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 356 AUDIO POWER AMPLIFIER APPLICATIONS. U nit in mm 8.3 M A X . • Low Saturation Voltage • VCE(sat)“ —0.32V (Typ.) ( I c = -5 0 0 m A , I g = -5 0 m A ) • High Collector Power Dissipation : P c = 1.2W (Ta = 25°C)

A1356 transistor

Abstract: a1356 2SA1356 2SC3419
Contextual Info: TO S H IB A 2SA1356 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 356 AUDIO PO W ER AM PLIFIER APPLICATIONS. • U n it in mm Low Satu ration V oltage : VCE(sat) = - 0 .3 2 V (Typ.) (IC = - 500m A, IB = - 50mA) • H igh Collector Pow er D issipation : P q = 1.2W (Ta = 25°C)

TA2761

Abstract: indiana general ferrites RCA-40608 HP608D transistor v2w 40608 CM 40608 field strength meter RCA Solid State Power Transistor BALLANTINE
Contextual Info: File No. 356 [JUCBZTD ^ P o w e r T r a n s is to rs Solid State Division 40608 RCA-40608 is an ep itax ial silico n n-p-n p lan ar tra n s is ­ tor. I t is e s p e c ia lly designed for operation a s a C la s s A, wide-band power am plifier in VHF circu its.

Contextual Info: N ANER PHILIPS/DISCRETE ObE D bbS3T31 0DlS7Qfl =1 J BF550 V r - 3/-/5- SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor, in a microminiature plastic envelope, intended for applications in thick and thin-film circuits. This transistor is primarily intended for use in i.f. detection applications.

BUZ211

Contextual Info: _ PowerMOS transistor_ BUZ211 N AMER PHILIPS/DISCRETE DbE D • _ _SL OOlMbbfl 7 ■ T-si-13 July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. FREDFET* with fast-recovery reverse diode.

Contextual Info: POUEREX INC 3RE D • 73^21 OO OMlTb 1 B P R X T - 3 3 - J S " m Ê Ê B Œ KD221205HB X Po w e rex, Inc., Hlllis Street, Youngw ood, Pennsylvania 15697 41 Z 925-7272 Powerex Europe, S.A., 4 2 8 Avenue G. Durand, B P 1 0 7 ,72003 Le Mans, France (4 3 )4 1 .1 4 .1 4

BUZ211

Abstract: T-39-13 IEC134 T2113
Contextual Info: PowerMOS transistor_BUZ211 N AMER P H IL IP S/ DI SC RE TE ObE D • ^53=131 0014bbö 1_ 7 ■ r - s i - 1 3 July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode PARAMETER SYMBOL field-effect power transistor in a Drain-source voltage

lf356 op-amp

Abstract: LF356 op-amp application FD200 diode 0.1 mF ceramic disc capacitor 271 Ceramic Disc Capacitors lf356 op-amp ic IC LF356 datasheet LF351 op-amp application Thomas M Frederiksen LF356 FET input op-amp
Contextual Info: National Semiconductor Application Note 447 Wanda Garrett July 1987 To use integrated circuits in real applications designers must know the limitations of the devices The majority of the limitations are published in the datasheets and these fall into two categories Absolute Maximums which if violated

Contextual Info: STTTbSS 0G0G424 T SLOTTED SWITCH 1ÛE D MARKTECH INTERNATIONAL MTSS8050 INFRARED LED+PHOTO TRANSISTOR • R s I J- APPLICATIONS •J t — • OPTICAL SWITCH • SHAFT POSITION AND VELOCITY SENSOR t • L l i J — -, , ■ FEATURES " TTp j RATING UNIT Forward Current

2SD2153

Abstract: nvn 05
Contextual Info: 2SD2153 h -7 > V ^ £ / T ransistors y 'j a > h7 > V * $ 2SD2153 Epitaxial Planar NPN Silicon Transistor fl£J§ÎI&^2j*llIIffl// Low Freq. Power Amp. • rHiES/Dimensions Unit : mm 1) VcE(sat) A'"'(Êt'0 VcE(sat)=0.5V (Max.) (lc/lB= 1A/20m A) 2) t t t a « « * hFEnnm m tm

BD131

Abstract: BD131A V4020
Contextual Info: BD131 J v _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR N-P-N transistor in a SOT-32 plastic package fo r general purpose, m edium pow er applications. P-N-P com plem ent is BD132. QUICK REFERENCE D ATA Collector-base voltage open e m itte r

BU2708AX

Abstract: LB 122 transistor To-92
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2708AX GENERAL DESCRIPTION High voltage, high speed switching npn transistor in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current

VEB mikroelektronik

Abstract: Mikroelektronik Information Applikation mikroelektronik Heft 12 Radio Fernsehen Elektronik 1977 Heft 9 information applikation information applikation mikroelektronik mikroelektronik DDR Halbleiterbauelemente DDR aktive elektronische bauelemente ddr mikroelektronik Heft
Contextual Info: m B Ik i^ ts je le l-c te n o r iil-c information Applikation m l^ o e le l-c fe n a riil-c Information Applikation H EFT 17 LEISTUNGSELEKTRONIK 4 Die sicheren A rbeitsbereiche Leistungsschalttransistoren VEB MIKROELEKTRONIK „VARLIIE8KNECHT“57AHNSDORP

eprom UV eraser

Abstract: TRANSISTOR D 1978 Jelight Company
Contextual Info: Ultraviolet EPROM erasers and wafer cleaners Jelight Company Inc. 2 Mason Irvine, CA 92618 Tel 949 380-8774 Fax (949)768-9457 Page 1 of 3 ISO 9001 CERTIFIED CHIPhERASER - EPROM Erasers And Wafer Cleaners Home Company Info Products Contact us Employment

eproms eraser

Abstract: eraser eprom UV eraser 15W-sec eprom eraser
Contextual Info: EPROM eraser - Wafer cleaner Page 1 of 3 CHIPhERASER EPROM Erasers and Wafer Cleaners JELIGHT CO.INC.established in 1978, is a recognized producer of quality ultraviolet light sources and relat equipment. The expertise gained throughout the years has assisted us in designing UV wafer and EPROM