BD131 Search Results

bd131 equivalent

Abstract: BD131 EQUIVALENT IC bd131 BD132
Contextual Info: Inchange Semiconductor Product Specification BD131 Silicon NPN Power Transistors • DESCRIPTION ·Complement to type BD132 ·With TO-126 package ·High current Max: 3A ·Low voltage (Max: 45V) APPLICATIONS ·For general purpose power applications PINNING

Contextual Info: BRIGHT LED ELECTRONICS CORP. BL-BD131 SINCE 1981 ● Features: ● Package dimensions: 1. Chip material: GaAlAs/ GaAs 2. Emitted color : Super Red 3.80 .150 3. Lens Appearance : Red Diffused 3.00(.118) 4. Low power consumption. 5. High efficiency. 6. Versatile mounting on P.C. Board or panel.

TV RADIO IC free

Abstract: bf194 BD124 BF195 BD116 BF180 BFW87 BF196 BD133 BF197
Contextual Info: 54 T ran sisto rs Continued Electronic Valves Z & I Aero Services Ltd London England 1972-73 ^JapìiX Notes T03 15W 30m c 1t +80 T03 45W 95m cl2i +60 55<2 2A 1A BD123 BD124 S/NPN S/NPN T03 MD17 45W 15W 85m c<2) 60m cm +90 +70 55<2) 60‘2’ 1A 0 .5A BD131

MAR 733

Abstract: BD131 MAR 745 TRANSISTOR Q 817 BD132 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD131 NPN power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 04 Philips Semiconductors Product specification NPN power transistor

d1694

Abstract: transistor D132 d-1694 BD131 D131 transistor d1687 TRANSISTOR D131 BD132 T4060 bm cb hen iv
Contextual Info: BD131 JV _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR N-P-N transistor in a SOT-32 plastic envelope fo r general purpose, medium power applications. P-N-P complement is BD132. Q U IC K R E F E R E N C E D A T A VCBO max. 70 V Collector-emitter voltage open base

BD132

Abstract: bd132 equivalent BD131
Contextual Info: SavantIC Semiconductor Product Specification BD132 Silicon PNP Power Transistors DESCRIPTION •Complement to type BD131 ·With TO-126 package ·High current Max:- 3A ·Low voltage (Max: -45V) APPLICATIONS ·For general purpose power applications PINNING

BD131

Abstract: bd131 bd132 BD132 bd131 equivalent
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON EPITAXIAL POWER TRANSISTORS NPN PNP BD131 BD132 EC TO-126 Plastic Package B General Purpose Medium Power Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Base Voltage

BD132

Abstract: BD131 NPN POWER TRANSISTOR SOT-32 M 5229 IC GDM2770 GQM2771 IEC134 transistor af 126 d5224 transistor Bd132
Contextual Info: BD132 P HILIPS I N T E R N A T I O N A L SbE D • 711Dfl2b G D I42770 T*i7 M P H I N r-33-^r SILICON PLANAR EPITAXIAL POW ER TRANSISTOR P-N-P transistor in a SOT-32 plastic envelope for general purpose, medium power applications. N-P-N complement is BD131.

bd131

Abstract: transistor BD131
Contextual Info: Philips Semiconductors Product specification NPN power transistor BD131 FEATURES PINNING • High current max. 3 A PIN • Low voltage (max. 45 V). DESCRIPTION 1 emitter 2 collector, connected to metal part of mounting surface 3 base APPLICATIONS • General purpose power applications.

BD131

Abstract: BD132 2A 50V NPN
Contextual Info: SavantIC Semiconductor Product Specification BD131 Silicon NPN Power Transistors DESCRIPTION •Complement to type BD132 ·With TO-126 package ·High current Max: 3A ·Low voltage (Max: 45V) APPLICATIONS ·For general purpose power applications PINNING PIN

BD131

Abstract: BD132 bd131 bd132
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SILICON EPITAXIAL POWER TRANSISTORS NPN PNP BD131 BD132 EC TO-126 Plastic Package B General Purpose Medium Power Applications ABSOLUTE MAXIMUM RATINGS

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON EPITAXIAL POWER TRANSISTORS NPN PNP BD131 BD132 EC TO-126 Plastic Package B General Purpose Medium Power Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Base Voltage

BD131

Abstract: BD132 bd132 equivalent BD132A
Contextual Info: PNP BD132 NPN BD131 SILICON PLANAR EPITAXIAL POWER TRANSISTORS The BD132are PNN transistors mounted in Jedec TO-126 plastic package. Medium power applications. NPN complements are BD131 . ABSOLUTE MAXIMUM RATINGS Symbol -VCEO -VCBO -VEBO Ratings Collector-Emitter Voltage

Contextual Info: BD131A Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)70 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)11 Maximum Operating Temp (øC)140’ I(CBO) Max. (A)5.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

BD131

Abstract: BD132 bd131 bd132
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer NPN/PNP SILICON EPITAXIAL POWER TRANSISTORS BD131 NPN BD132 PNP TO-126 General Purpose, Medium Power Applications.

7430 ic data sheet

Abstract: BD131 2108 npn transistor bd131 equivalent BD132 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD131 NPN power transistor Product specification Supersedes data of 1997 Mar 04 1999 Apr 12 Philips Semiconductors Product specification NPN power transistor BD131 FEATURES PINNING • High current max. 3 A

BL-BD334

Abstract: BL-BU331 BL-BD134 BL-BD337M LTRA
Contextual Info: Pack age I’;*.ri No 1 E : r. U L T R A B R I G H T L L P 1 A M I ’S i R O U N D T Y T L S j ; -li. W aw Length À Pimi: ' L : :.« ; : i.•ci > o|.r Red Diffused 20 60 30 150 1.7 2.6 120.0 40 BL-BD131 Super Red 680 Red Diffused 20 60 30 150 1.7 2.6 150.0

bd132

Abstract: transistor ALG 20
Contextual Info: BD132 _ J V _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR P-N-P transistor in a SOT-32 plastic envelope for general purpose, medium power applications. N-P-N complement is BD131. QUICK REFERENCE DATA Collector-base voltage open emitter

transistor h44

Abstract: BD132 PNP POWER TRANSISTOR SOT-32 BD131 NPN POWER TRANSISTOR SOT-32
Contextual Info: BD132 _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR P-N-P transistor in a SOT-32 plastic envelope fo r general purpose, medium power applications. N-P-N complement is BD131. QUICK REFERENCE D A T A Collector-base voltage open em itter Collector-em itter voltage (open base)

BD132

Abstract: FE21
Contextual Info: BD132 _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR P-N-P tran sisto r in a SOT-32 plastic package fo r general purpose, m edium power applications. N-P-N com plem ent is BD131. Q U IC K R EFE R E N C E D A T A “ v CBO max. 45 V C o lle c to r-e m itte r voltage open base

Contextual Info: BD131 _ y v _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR N-P-N transistor in a SOT-32 plastic envelope for general purpose, medium power applications. P-N-P complement is BD132. Q U ICK R E F E R E N C E D A TA Collector-base voltage open emitter

Contextual Info: DISCRETE SEMICONDUCTORS BD131 NPN power transistor 1999 Apr 12 Product specification Supersedes data of 1997 Mar 04 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN power transistor BD131 FEATURES PINNING • High current max. 3 A

broadcom BCM 4360

Abstract: broadcom BCM 4331 bcm 4330 programming Guide MPC8360ERM broadcom BCM 4335 BCM 4331 Broadcom BCM 4341 BCM 4334 lcd ibm pinout bcm 4339
Contextual Info: MPC8360E PowerQUICC II Pro Integrated Communications Processor Family Reference Manual MPC8360ERM Rev. 2 05/2007 How to Reach Us: Home Page: www.freescale.com email: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt