TRANSISTOR 2SC 18 Search Results

A933A

Contextual Info: Transistors General Purpose Transistor -50V, 0.15A 2SA1037AK / 2SA1576A / 2SA1774 / 2SA933AS •F e a tu re s 1 ) Excellent •E x te rn a l dim ensions (Units: mm) ïife linearity. 2) Com plem ents the 2SC2412K/ 2SA1576A 2SA1037AK 2SC40S1 /2SC 4617/2SC 1740S.

TRANSISTOR 2SC

Abstract: transistor 2sc 18 2SC2522 transistor 2sc pnp fujitsu ring emitter 2sc2523 high power switching transistor 2sc
Contextual Info: SILICON HIGH SPEED POWER TRANSISTOR 2SC 2522 2SC 2523 S e p te m b e r 19 79 SILICON NPN RING EMITTER TRANSISTOR RET T he 2 S C 2 5 2 2 /2 S C 2 5 2 3 are silicon NPN general purpose, high pow er switching transistors fabricated w ith Fujitsu's unique Ring E m itter Transistor (R E T ) tec h ­

2SC2526

Abstract: 2SC2525 TRANSISTOR 2Sc 2525 TRANSISTOR 2SC TRANSISTOR 2SC2525 2SA1076 LC 311 TRANSISTOR 2sc2526 "ring emitter" 2SC25
Contextual Info: F U J IT S U SILICON HIGH SPEED POWER TRANSISTOR 2SC 2525 2SC 2526 S epte m be r 19 79 SILICON NPN RING EMITTER TRANSISTOR RET The 2 S C 2 5 2 5 /2 S C 2 5 2 6 are silicon NPN general purpose, high pow er switching transistors fabricated w ith Fujitsu's unique Ring E m itter Transistor (R E T ) tec h ­

2SC4699K

Abstract: 2SC4700 T247 2SC4699 T106 T107 T146 T147 T246
Contextual Info: b ' 7 > i s Z £ /Transistors 2SC4699K/2SC4700 2SC 4699K 2SC 4700 Epitaxial Planer NPN Silicon Transistor M M Z 'f For High-Speed Switching • ÿH férl'ii 0/D im ensions Unit : mm 2SC4689K to ff= 2SC4700 2 .0 ± 0 ,Z 2 .9 ± 0 .2 22ns (Typ.) • I —0.1

TCA 365

Abstract: 2SC3571
Contextual Info: NPN SILICON POWER TRANSISTOR 2SC 3571 DESCRIPTION The 2SC3571 is NPN silicon epitaxial transistor designed for switching regulator, DC-DC converter and high frequency power in millimeters inches amplifier application. FEATURES PACKAGE DIMENSIONS 10.5 MAX.

Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC2586 NPN SILICON EPITAXIAL TRANSISTOR FOR UHF-BAND POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeters The 2SC 2586 is an NPN silicon epitaxial transistor designed for UHF-band medium pow er amplifiers.

2SC2527

Abstract: fujitsu DC-DC a1077 NPN transistor 2527
Contextual Info: January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE. 2SC2527 Silicon High Speed Power Transistor DESCRIPTION The 2SC 2527 is silicon NPN general purpose, high power switching transistors fabricated with Fujitsu's unique Ring Emitter Transistor R E T technology. R E T

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC1926 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE DESCRIPTION P A C K A G E D IM E N S IO N S The 2SC 1926 is an NPN silicon epitaxial dual transistor that

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1946A NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC 1946A is a silicon NPN epitaxial planar type transistor de­ Dim ensions in m m signed for RF power amplifiers on V H F band mobile radio applications. FEATURES

2SC2609

Abstract: 2Sc260 transistor z ss
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2609 NPN EPITAXIAL PLANAR TY PE DESCRIPTION OUTLINE DRAWING M itsubishi 2SC 2609 is a silicon N PN epitaxial planar type transistor specifically deisgned for V H F power am plifier applications. Dim ensions in mm R1 FEATURES

BFX89

Abstract: Transistor BFX 90 BFX 514 Q62702-F296 Q 371 Transistor 2sc 684
Contextual Info: 2SC D • û23ShQS 000474^ 4 W S I E ù T ~ Z 'tï NPN Silicon Transistor for RF Broadband Amplifier BFX 89 - SIEMENS AKTIENGESELLSCHAF BFX 89 is an epitaxial NPN silicon RF transistor in TO 72 case (18 A 4 DIN 41876 . The leads are electrically insulated from the case. This transistor is suitable for general

Z60N

Contextual Info: MITSUBISHI RF POWER TRANSISTOR bSMTflST QÜ17703 ÔTT 2SC4240 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION 2SC 4240 is a silicon NPN epitaxial planar type transistor specifi­ cally designed for VHF power amplifier applications. OUTLINE DRAWING Dim ensions in mm

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC1927 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE DESCRIPTION P A C K A G E D IM E N S IO N S The 2SC 1927 is an NPN silicon epitaxial dual transistor that

2SC1729

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1729 NPN EPITAXIAL PLANAR TYP E DESCRIPTION OUTLINE DRAWING 2SC 1729 is a silicon NPN epitaxial planar type transistor designed for R F power amplifiers on V H F band mobile radio amplications. Dimensions in mm FEATURES • High power gain: Gpe > 10dB

2sc1965

Abstract: 2SC1965A transistor 6w
Contextual Info: 1=24^02=] 0017537 MITSUBISHI RF POWER TRANSISTOR 30T 2SC1965A NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC 1 96 5A is a silicon NPN epitaxial planar type transistor Dimension in mm designed for industrial use RF power amplifiers on VHF band 0 8 .5 O M A X

TRANSISTOR SE 135

Abstract: 2SC2055 transistor BA RW
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC2055 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC 2055 is a silicon NPN epitaxial planar type transistor designed for RF amplifiers on V H F band portable or hand-held radio applications. Dimensions in mm 0 5 .1 M A X

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1729 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC 1729 is a silicon NPN epitaxial planar type transistor designed for R F power amplifiers on V H F band mobile radio amplications. Dimensions in mm FEATURES • High power gain: Gpe > 10dB

2SC1970

Abstract: 2sc1970 transistor T-30 parameters S transistor NPN
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC1970 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC 1970 is a silicon NPN epitaxial planar typ e transistor designed Dimensions in mm fo r RF power am plifiers on V H F band m obile radio applications. 9.1 ± 0 .7

3055 transistor

Abstract: 2N3055 M 3055 power transistor transistor 3055 e 3055 t 3055 npn power transistor 3055 on 3055 j 3055 power transistor IN 3055
Contextual Info: 2SC T> m flS3SbOS D004T11 * mZIZG . T ~ 2 3 -/ 3 NPN Transistor for Powerful A F Output Stages 2 N 3055 - SIEMENS AKTIENGESELLSCHAF-2 N 3055 is a single diffused NPN silicon transistor in TO 3 case 3 A 2 DIN 41872). The collector is electrically connected to the case. The transistor is particularly suitable for

2SC3133

Abstract: 27mhz rf ic TRANSISTOR 1P 1P H transistor 27mhz transistor RF POWER TRANSISTOR NPN
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC 3133 NPN EPITAXIAL PLANAR T Y P E DISCRIPTION OUTLINE DRAWING 2SC3133 is a silicon NPN ep itaxia l planar type transistor Dimensions i designed fo r RF pow er am plifiers in HF band m obile radio applications. 9.1 ± 0 . 7

Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3101 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION 2SC 3101 is a silicon N PN epitaxial planar typ e transistor specifi­ OUTLINE DRAWING Dimensions in mm cally designed fo r U H F power amplifiers applications. FEATURES • High pow er gain:

Transistor BFX 90

Abstract: transistor bfx 73 BFX 514 BFX89 b 514 transistor
Contextual Info: 2SC D • û23ShQS 000474^ 4 W S I E ù NPN Silicon Transistor for RF Broadband Amplifier T ~ Z 'tï BFX 89 -SIEMENS AKTIEN GE SE LL SC HA F BFX 89 is an epitaxial NPN silicon RF transistor in TO 72 case (18 A 4 DIN 41876 . The leads are electrically insulated from the case. This transistor is suitable for general

Contextual Info: TOSHIBA 2SC2240 TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE PCT PROCESS 2SC 2240 LOW NOISE AUDIO AMPLIFIER APPLICATIONS The 2SC2240 is a transistor for low frequency and low noise applications. This device is designed to lower noise figure in the region of low signal source impedance, and to lower the pulse

2SC3908

Abstract: op 30MHZ PORCELAIN dust cap LC 7w RF POWER TRANSISTOR NPN 3 w RF POWER TRANSISTOR NPN
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 2SC3908 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC 3908 is a silicon NPN epitaxial planar typ e transistor Dim ensions in m m designed fo r H F pow er am p lifie rs applications. R1 FEATURES • High pow er gain: G pe ^ 1 1 .5dB