2SC605 Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6054J Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2174J 1.00±0.05 • Features VCBO Collector-emitter voltage (Base open) VCEO Emitter-base voltage (Collector open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2174G Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6054G • Features M Di ain sc te on na tin nc ue e/ d  Package  Absolute Maximum Ratings Ta = 25°C

2SC6050

Contextual Info: Transistors 2SC6050 Silicon NPN epitaxial planar type For high frequency amplification, oscillation and mixing Unit: mm • Features 3 0.60±0.05 2 1 Symbol Rating Unit Collector-base voltage Emitter open VCBO 15 V Collector-emitter voltage (Base open)

vhf high gain transistor

Abstract: 2SC606 F VHF amplifier 2SC605 VHF amplifier circuit
Contextual Info: 2SC605,606 2SC605, 606 NPN NPN SILICON TRANSISTOR VHF TV TV Tuner 7 0 a r - 7 ? /M IC R O D IS K s ft S /F E A T U R E S •iV ' fT (530MHz T Y P. £ (2 .5dB TYP. @200MHz) tc j: (3VHF • 7 # —V — A G C z J S f i , VHF TV L t f t i g t £» • B S t e l ? -i

2SA2174J

Abstract: 2SA21 2SC6054J 2sa2174j_cob-vcb 2SA2174
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2174J Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6054J 1.00±0.05 • Features Unit Collector-base voltage (Emitter open) VCBO −60 V Collector-emitter voltage (Base open)

2SC6050

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6050 Silicon NPN epitaxial planar type For high frequency amplification, oscillation and mixing Unit: mm • Features M Di ain sc te on na tin nc ue e/ d 3 2 ue pl d in ea an c

2SA2174J

Abstract: 2SC6054J 2SA2174
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6054J Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2174J 1.00±0.05 • Features Unit Collector-base voltage (Emitter open) VCBO 60 V Collector-emitter voltage (Base open)

2SA21

Abstract: 2SA2174G 2SC6054G 2SC6054J
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6054G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2174G • Package  High forward current transfer ratio hFE  SS-Mini type package, allowing downsizing of the equipment and automatic

2SC6053

Contextual Info: 〈SMALL-SIGNAL TRANSISTOR〉 2SC6053 FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit：ｍｍ 2SC6053 is a mini package resin sealed silicon NPN epitaxial type transistor designed with high collector current, small VCE sat .

2sc6052

Abstract: transistor C6052 c6052 C6052 transistor
Contextual Info: 2SC6052 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6052 High-Speed Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 180 to 390 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.20 V (max.) •

2SC6050

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6050 Silicon NPN epitaxial planar type For high frequency amplification, oscillation and mixing Unit: mm • Features 3 0.60±0.05 2 1 Symbol Rating Unit Collector-base voltage (Emitter open)

2SA2174J

Abstract: 2SC6054J 2SA21
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2174J Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6054J 1.00±0.05 • Features Collector-base voltage (Emitter open) VCBO −60 V Collector-emitter voltage (Base open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6054G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2174G • Package  High forward current transfer ratio hFE  SS-Mini type package, allowing downsizing of the equipment and automatic

2SA2174J

Abstract: 2SC6054J plm100
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6054J Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2174J 1.00±0.05 • Features Unit Collector-base voltage (Emitter open) VCBO 60 V Collector-emitter voltage (Base open)

C6052 TRANSISTOR DATA

Abstract: 2SC6052 C6052 transistor C6052 transistor 2SC6052 C6052 TRANSISTOR DATA PDF Datasheets C6052 transistor
Contextual Info: 2SC6052 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6052 High-Speed Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 180 to 390 IC = 0.5 A • Low collector-emitter saturation: VCE (sat) = 0.20 V (max) •

2SC6054G

Abstract: 2SA2174G 2SC6054J
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6054G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2174G • Package  High forward current transfer ratio hFE  SS-Mini type package, allowing downsizing of the equipment and automatic

2SA2174J

Abstract: 2SC6054J
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6054J Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2174J 1.00±0.05 • Features Unit Collector-base voltage (Emitter open) VCBO 60 V Collector-emitter voltage (Base open)

2SA2174J

Abstract: 2SC6054J
Contextual Info: Transistors 2SA2174J Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6054J 1.00±0.05 • Features Unit Collector-base voltage Emitter open VCBO −60 V Collector-emitter voltage (Base open) VCEO −50 V Emitter-base voltage (Collector open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6050 Silicon NPN epitaxial planar type For high frequency amplification, oscillation and mixing Unit: mm • Features 3 0.60±0.05 2 1 Symbol Rating Unit Collector-base voltage (Emitter open)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6054G Silicon NPN epitaxial planar type For general amplification Complementary to 2SA2174G • Features  Package  High forward current transfer ratio hFE  SS-Mini type package, allowing downsizing of the equipment and automatic

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2174G Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6054G • Features  Package  High forward current transfer ratio hFE  SS-Mini type package, allowing downsizing of the equipment and automatic

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA2174J Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6054J 1.00±0.05 • Features VCBO −60 V Collector-emitter voltage (Base open) VCEO −50

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC6050 Silicon NPN epitaxial planar type For high frequency amplification, oscillation and mixing Unit: mm • Features 3 Symbol Collector-base voltage (Emitter open) VCBO Collector-emitter voltage (Base open)

2SC6058

Abstract: 2SC6058LS C6058
Contextual Info: 2SC6058LS Ordering number : EN8560 SANYO Semiconductors DATA SHEET 2SC6058LS NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications Features • • • • High breakdown voltage and high reliability Ultrahigh-speed switching Wide ASO