TRANSISTOR 2SA1013 Search Results

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

2sa1013

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA1013 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR  DESCRIPTION The UTC 2SA1013 is a PNP epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high BVCEO and high DC current gain, etc.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA1013 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR  DESCRIPTION The UTC 2SA1013 is a PNP epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high BVCEO and high DC current gain, etc.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA1013 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR  DESCRIPTION The UTC 2SA1013 is a PNP epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high BVCEO and high DC current gain, etc.

oz960

Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Contextual Info: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors

Contextual Info: ST 2SA1013L PNP Silicon Epitaxial Planar Transistor The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. TO-92L Plastic Package Weight approx. 0.38g Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit

2SA1013L

Contextual Info: ST 2SA1013L PNP Silicon Epitaxial Planar Transistor The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. TO-92L Plastic Package Weight approx. 0.38g Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit

transistor 2sa1013

Abstract: 2SA1013
Contextual Info: ST 2SA1013 PNP Silicon Epitaxial Planar Transistor The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92L Plastic Package

2SA1013

Abstract: transistor 2sa1013
Contextual Info: ST 2SA1013 PNP Silicon Epitaxial Planar Transistor The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92L Plastic Package

2sA1013 equivalent

Abstract: 2SA1013
Contextual Info: ST 2SA1013 TO-92 PNP Silicon Epitaxial Planar Transistor The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package

2SA1013

Abstract: 2sA1013 equivalent transistor TO-92 pnp
Contextual Info: ST 2SA1013 TO-92 PNP Silicon Epitaxial Planar Transistor The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package

transistor 2sa1013

Abstract: 2SA1013
Contextual Info: ST 2SA1013 TO-92 PNP Silicon Epitaxial Planar Transistor The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SA1013 TO-92MOD TRANSISTOR PNP 1. EMITTER FEATURE y High Voltage:VCEO=-160V y Large Continuous Collector Current Capability y Complementary to 2SC2383 2. COLLECTOR

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SA1013 TO-92MOD TRANSISTOR PNP 1. EMITTER FEATURE y High voltage:VCEO=-160V y Large continuous collector current capability y Complementary to 2SC2383 2. COLLECTOR

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC2383 TO-92MOD TRANSISTOR NPN FEATURE y High Voltage: VCEO=160V y Large Continuous Collector Current Capability y Complementary to 2SA1013 1. EMITTER 2. COLLECTOR

2SC2383

Abstract: 2SC2383 equivalent 2SA1013 2SC2383 NPN Transistor 2sA1013 equivalent
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC2383 TO-92M TRANSISTOR NPN FEATURE y High voltage: VCEO=160V y Large continuous collector current capability y Complementary to 2SA1013 1. EMITTER 2. COLLECTOR

Contextual Info: 2SA1013 PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE ● High Voltage：VCEO= -160V ● Large Continuous Collector Current Capability ● Complementary to 2SC2383

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)

2SA1013

Abstract: 2sc2383 transistor 2sa1013
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SA1013 TRANSISTOR TO-92L PNP 1. EMITTER FEATURE y High voltage:VCEO=-160V y Large continuous collector current capability y Complementary to 2SC2383 2. COLLECTOR 3. BASE

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SA1013 TRANSISTOR TO-92L PNP 1. EMITTER FEATURE y High Voltage:VCEO=-160V y Large Continuous Collector Current Capability y Complementary to 2SC2383 2. COLLECTOR 3. BASE

2SA1013

Abstract: 2sa1013y transistor 2sa1013 2SA1013-Y 2sA1013 equivalent 2SC2383 2SA1013-O 2SA1013-R 2SA-1013 2SA1013 TO92-L
Contextual Info: 2SA1013 -1A, -160V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE TO-92L High Voltage：VCEO= -160V Large Continuous Collector Current Capability Complementary to 2SC2383

2sc2383 transistor

Abstract: 2SC2383 equivalent transistor 2sc2383 2SA1013 2SC2383 VCEO160V
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO-92L 2SC2383 TRANSISTOR NPN 1. EMITTER FEATURE y High voltage: VCEO=160V y Large continuous collector current capability y Complementary to 2SA1013 2. COLLECTOR 3. BASE

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SC2383 TO-92L TRANSISTOR NPN FEATURE y High Voltage: VCEO=160V y Large Continuous Collector Current Capability y Complementary to 2SA1013 1. EMITTER 2. COLLECTOR 3. BASE