TRANSISTOR 2SA 6 J Search Results

transistor 2SA

Abstract: 2SA940 AC550 2sa 940 2SC2073
Contextual Info: S / U D > P N P = * # « * - t t f é h ^ : / 5; 3 ^ SILICON PNP TRIPLE DIFFUSED M ESA TRANSISTOR o nummm O MflilpJttiaffl 940 2SA Unit in m m 0Z.6±O.2 o Power Amplifier o Vertical Output 2302073 Applications Applications t ^ i' '/ >J Complementary to 2SC2073

2SA1804

Abstract: 2SC4689 111s1
Contextual Info: 2SA1804 TO SH IBA 2SA 1804 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 15.8±0.5 i Complementary to 2SC4689 Recommend for 55W High Fidelity Audio Frequency Amplifier output Stage. 0 3 .6 Í0 .2 3.5 MAXIMUM RATINGS Ta = 25°C

2SA842

Abstract: 2SA842-BL IC-224 2SA84 2SA842-GR ica 700 ulma Produced by Perfect Crystal Device Technology transistor 2SA TRANSISTOR nf 842
Contextual Info: i / i n y p N P x t : 9 * 5/ ? \ Æ h 5 y ÿ Z 9 p c T m ) SILICON PNP o EPITAXIAL TRANSISTOR (P C T PROCESS)^ r 2SA 842 U n i t i n mm Low N o i s e A u d i o A m p l i f i e r A p p l i c a t i o n s 05.8 MAX. • SUS-fflfttfM'-SWo • ¡ t» S * i# i|6 $ # & w 0

TRANSISTOR 2Sa 1075

Abstract: TRANSISTOR 2Sc 2525 2SA audio POWER TRANSISTORS 2SA transistor 2SA1075 transistor 2SA 2SA POWER TRANSISTORS 2SA1076 TRANSISTOR 2SA1076 2sa tr
Contextual Info: F U J IT S U SILICON HIGH SPEED POWER TRANSISTOR 2SA1075 2SA1076 SILICON PNP RING EMITTER TRANSISTOR RET T h e 2S A 1 0 7 5 /2 S A 1 0 7 6 are silicon PNP general purpose, high power switching transistors fabricated w ith Fujitsu's unique Ring E m itte r Transistor (R E T ) te c h ­

2SC509

Abstract: 2SA509 2sa509 transistor Produced by Perfect Crystal Device Technology MPC600 5M60 2SC509 Y 4300S
Contextual Info: 509 g 2SA 2 5 5 9 / U D ^ P N P Ilf ? ^ ? J W B h > y ^ P C T S Ä ^SILIC O N PNP EPITAXIAL TRANSISTOR (PCT PROCESS) O •* -i y T > O A u d io P o w e r A m p l i f i e r A p p l i c a t i o n s o S w itch in g A p p lic a tio n s INDUSTRIAL APPLICATIONS

Transistor 2SA 2SB 2SC 2SD

Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Contextual Info: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)

2SC482

Abstract: 2SA485 2SC15-0 2SA484 2SA486 2SA496 2SA497 2SA501 2SA503 2SA504
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

2sc2089

Abstract: 2SA941 2SC2088 2SA942 A941 A942 L171
Contextual Info: 5/ U D > P N P X W ^ 2/ ? i W B h 5 ^ ^ P C T J 5 Ä SILICON PNP EPITAXIAL TRANSISTOR (PCT PROCESS) U n i t i n mm O Low N o i s e A u d i o A m p l i f i e r A p p l i c a t i o n s . • S ilH - ff T - to : Vc E 0 = ~ 1 2 0 V ( 2 S A 9 4 1 ) , - 9 0 V ( 2SA 942 )

2SC3514

Abstract: transistor 2sa1 2SA1383 transistor TRANSISTOR Y7 2SA1383
Contextual Info: 2SA1383 2SC3514 P N P / N P N o : t " ^ + ' > 7 ’; u J K ' > □ > b PN P / N P N Silicon Epitaxial Transistor Audio Frequency Pow er Amplifier 2SA 13*3/2SC 3514li fcH *«a««m t L X til - SsW S£ » t - iM / P A C K A G E D IM E N S IO N S (Unit : mm

Transistor TT 2246

Abstract: TT 2246 transistor tt 2246 2SC2232 transistor tt 2247 tk 2238 2SA969 2236 1F 2SA981 2SA965
Contextual Info: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

transistor 2sa 1072

Abstract: "ring emitter" transistor 2SA 2SA audio POWER TRANSISTORS 2SA1072 2SA1073 2SA107 transistors 2SA fujitsu ring emitter transistor 2sc pnp
Contextual Info: F U J IT S U SILICON HIGH SPEED POWER TRANSISTOR 2SA1072 2SA1073 ^ September 1979 SILICON PNP RING EM ITTER TRANSISTOR RET T h e 2 S A 1 0 7 2 /2 S A 1 0 7 3 are silicon PNP general purpose, high p ow er sw itching transistors fabricated w ith Fujitsu's unique Ring E m itte r Transistor (R E T ) te c h ­

TRANSISTOR nf 841

Abstract: NF 841 2SA841 2SA841BL 2SA841-BL TRANSISTOR 2Sa841 transistor 2SA TRANSISTOR 841 2SA amplifier 2SA transistor
Contextual Info: 2s a 841 5/ U D > P N P I t i ^ 2/^ W B S 5 > y ^ P C T B S C ^ IL IC O N PNP EPITAXIAL TRANSISTOR (P C T PROCESS) o fi js m.<&m t * is m o Low N o i s e Audio Am plifier Applications Uni t i n Bin ^ 5 . 8 MAX,. : ^CEO = - 6 0V : NF = 6 d B ( M a x . ) / R g =« 1100kkS2

transistor a7t

Abstract: 2SA917 709a 2SA916 2SC1931 SA 1941 2SA562 T 2SA562 2SA914 2SA915
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

15J102

Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811

transistor k117

Abstract: transistor k363 K369 k117 transistor transistor k364 transistor K246 K30ATM k117 equivalent K363 transistor k246 transistor
Contextual Info: 10-1 Small Signal Transistors Mini-Package Type •c (m A ) f j T Y P . (M IN ) V C E (sat) M A X . hFE PC (mW) CCE IV ) >C im A ) ‘c IV ) im A ) !8 Im A ) (M Hz) V CE (V ) !C Im A ) 2SA 1048 2 SC 2 4 5 8 50 150 200 70 ~ 4 0 0 /7 00 6 2 0 .3 /0 .2 5 100

2sa 102 transistor

Abstract: A1862 transistor 2SA 101 LA marking code PNP transistor 2sa 102 2SA series a8cc marking code V6 69 2SA1862F5 transistor PNP
Contextual Info: 2SA1862F5 Transistor, PNP Features Dimensions Units : mm • • • available in CPT F5 (SC-63) package package marking: A1862*Q, where ★ is hFE code and □ is lot number 2SA1862F5 (CPT F5) high breakdown voltage, typically 60 B V Ce o = -4 0 0 V •

vno300m

Abstract: 2SC2382 epa 2391 2SA103 THB 6 2411 175mhz 12.5v 40w te 2395 138B 138D 2SA1028
Contextual Info: 5 - - FOR U SE BY E LEC TR IC IA N S O VER SEA S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

A1834

Abstract: transistor 1020 transistor surface mount to transistor 2SA 2SA1834F5 2SC5001 transistor marking CS transistor PNP 4 1020 transistor 2SA 016
Contextual Info: 2SA1834F5 Transistor, PNP Features Dimensions Units : mm available In CPT F5 (SC-63) package 2SA1834F5 (CPT F5) package marking: A1834-AQ, where ★ is hFE code and □ is lot number low collector saturation voltage VcE(sat) - “0-16 V for lc = -4 A, lB = -0.05 mA

2SA561

Abstract: 2SC734 2SA 561 transistor transistor 2SC734 transistor 2SA561 2SC734 Y JSW 70 Produced by Perfect Crystal Device Technology TRANSISTOR y9
Contextual Info: 2s a 561 ^ u j y p N P x ^ 5> ^ p m ^ y ^ x s > p c T m SILICON PNP EPITAXIAL TRANSISTOR (PCT PROCESS o O D riv e r S ta g e A m p lif ie r A p p lic a tio n s •  W - Ë E - r - t ; V c b o = - 50V • « IÎD * Œ x > 5 ^ ; Vc k ( e a t ) = 2SC734 t

A1807

Abstract: pnp transistor 600V 2SA1807F5 transistor marking code NW transistors 2SA transistor 2SA 6 J transistor 2SA 600v PNP -600v
Contextual Info: 2S A 1807F5 Transistor, PNP Features • available in CPT F5 SC-63 package • package marking: A1807-AQ, where ★ is hFE code and □ is lot number • high breakdown voltage, BVceo = ~600 V • low collector saturation voltage, typically VCE(sat) = -0.25 V for

Contextual Info: SANKEN ELECTRIC CO LTD 7^0741 SSE ]> GGQO'iS'i RTS « S A K J Silicon PNP Epitaxial Planar 2SA1694 ☆ Complement to type 2SC4467 Application Example: ' Outline Drawing 2 M T-100 T03P Audio and General Purpose (Ta=25°C) Electrical Characteristics 2SA 1694

A1727 transistor

Abstract: A1727 transistor C1000 J001 transistor a1727 c1000 transistor 2sa 102 transistor D014B 2sa172 transistor 81 120 w 63
Contextual Info: 2SA1727F5 Transistor, PNP Features Dimensions Units : mm • available in C P T F5 (SC-63) package • package marking: A1727-AQ, where ★ is hFE code and □ is lot number 6.5 ± 0.2 high breakdown voltage, r r • 2SA1727F5 (CPT F5) C1 51 -0.1 I 1 V q e o = _4 0 0 V

2SA679

Abstract: 2SA679Y 2SA679-R 2SA680 2SC1079 2SA679R TRANSISTOR 2SC1080 2sa679 toshiba transistor 2SC1079 2SC1080
Contextual Info: v 'j3 > P N P x k °^ + V7 2SA679, 2SA680 SILICON PNP EPITAXIAL MESA TRANSISTOR TENTATIVE O A u d io P o w e r A m p lifie r A p p lic a tio n s • a • 25.O0M ax 21.0 ¡(Ma : P c = 100W ( T c = 25°C) v ? fi : K W E E -T rf V ceo V = - 1 2 0 V (2SA 679)

JD 1803

Abstract: 2SA1870 100V 2A MPT3 2SA1900 2SC5053 marking code pj vat package marking code TRANSISTOR 2SA1870
Contextual Info: 2SA1870 Transistor, PNP Features Dimensions U n its : mm • available in PSD package • low collector saturation voltage, typicallyVCE(sat) = -0.2 V a t lc/lB = -6A /-0.3A • high switching speed, typically tf = 0.17 (AS for lc = -6 A • wide safe operating area (SOA)