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    TRANSISTOR 2062 Search Results

    TRANSISTOR 2062 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-2
    		Rochester Electronics LLC Avionics LDMOS transistor PDF Buy
    RX1214B300YI
    		Rochester Electronics LLC RX1214B300Y - Microwave Power Transistor PDF Buy
    CA3127MZ
    		Rochester Electronics LLC CA3127 - Transistor Array PDF Buy
    RX1214B130YI
    		Rochester Electronics LLC NPN microwave power transistor PDF Buy
    MX0912B251Y
    		Rochester Electronics LLC NPN microwave power transistor PDF Buy

    TRANSISTOR 2062 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    358 IC

    Abstract: transistor 359 AJ 2SC4453 S2E MARKING 2S12 transistor npn d 2058
    Contextual Info: SANYO SEMICONDUCTOR CORP 2SC4453 52E D • 7 ^ 7 Q ? h 0007104 t ■ T-35-09 2018A N PN Epitaxial Planar Silicon Transistor High-Speed Switching Applications 2S12 F e a tu re s • F ast switching speed • Low collector saturation voltage • High gain-bandwidth product


    OCR Scan     		2SC4453 2SC4453-applied 358 IC transistor 359 AJ S2E MARKING 2S12 transistor npn d 2058 PDF

    2SC4365

    Abstract: 2SC4402 SK200
    Contextual Info: SANYO SEMICONDUCTOR CORP SSE 7=1=1707^ D D O O böbT 2SC4402 2 T-3Ì-/7 NPN Epitaxial Planar Silicon Transistor 2059 V/U M IX, OSC, Low-Voltage Amp Applications 2755 Applications • VHFAJHF MIX/OSC, low-voltage high-frequency amplifiers Features fT=3.0GHz typ Vce = 3V


    OCR Scan     		2SC4402-applied 2SC4365 2SC4402 SK200 PDF

    k 2059 TRANSISTOR

    Abstract: TRANSISTOR BI 187 2T transistor surface mount pa 2030a 2SC4400 NPN S2e 1Ft TRANSISTOR
    Contextual Info: SANY O S E M I C O N D U C T O R 2SE CORP D 7 cH ? 0 7 b 000 3^33 7 2SC4400 T -3 I-IS 'r;' ,>V ^ ’sx'*>V:- N P N Epitaxial Planar Silicon Transistor 2059 High-Frequency General-Purpose Amp Applications F eatu res . High power gain • High cutoff frequency


    OCR Scan     		2SC4400 2SC4400-applied k 2059 TRANSISTOR TRANSISTOR BI 187 2T transistor surface mount pa 2030a 2SC4400 NPN S2e 1Ft TRANSISTOR PDF

    pa 2030a

    Abstract: cp 035 sanyo NPN S2e 2SC4412 Marking transistor 3019 Transistor
    Contextual Info: SA NY O S E M I C O N D U C T O R 25E D CORP 7T= 707b 0 0 Q 7 0 3 7 b T -3H 7 2SC4412 ^ N PN Triple Diffused Planar Silicon Transistor 2018 A TV Camera Deflection, High-Voltage Driver Applications D3019 F e a tu r e s . H igh breakdow n voltage (V c e o —300V)


    OCR Scan     		1707b 00Q7037 2SC4412 pa 2030a cp 035 sanyo NPN S2e Marking transistor 3019 Transistor PDF

    A1728

    Abstract: 2SA1728
    Contextual Info: SA NY O S E M I C O N D U C T O R CO RP 22E » i m u i h .ooo?oae o $3132 F e a tu re s • Adoption of FBET process • Low collector-to-emitter saturation voltage • F ast switching speed • Small-sized package A bso lu te M axim um R a tin g s atT a= 25°C


    OCR Scan     		7clc1707b DQ070aS A1728 2SA1728 PDF

    TFDU4301

    Abstract: spec RC5 extended TFDU4301-TT TFDU4301-TR3 TFDU4301-TR1 Infrared Transceiver
    Contextual Info: TFDU4301 Vishay Semiconductors Infrared Transceiver Module SIR, 115.2 kbit/s for IrDA Applications FEATURES 20101 DESCRIPTION The TFDU4301 is a low profile (2.5 mm) infrared transceiver module. It is compliant to the latest IrDA® physical layer standard for fast infrared data communication, supporting


    Original     		TFDU4301 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 TFDU4301 spec RC5 extended TFDU4301-TT TFDU4301-TR3 TFDU4301-TR1 Infrared Transceiver PDF