TRANSISTOR 2061 Search Results

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

transistor 2061

Abstract: 2PD602S 2PB710 2PB710A 2PD602 2PD602A 2PD602AQ 2PD602AR 2PD602Q 2PD602R
Contextual Info: 7 1 1 0 fl 5 b DD7GQ24 bSG ^ I P H I N Philips Semiconductors NPN general purpose transistor Objective specification 2PD602; 2PD602A PIN CONFIGURATION FEATURES • Large collector current a • Low collector-emitter saturation voltage. DESCRIPTION NPN transistor in a plastic SC59

10l82

Abstract: 2SA1784 2SC4644 TO-92 VCEO400V 2SAR 2tj transistor
Contextual Info: Ordering number : EN 3520 2SA1784/2SC4644 i PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor S A t Y O i High Voltage Driver Applications F e a tu re s • Adoption of MBIT process - High breakdown voltage Vceo —400V

MC2124

Abstract: MC2150
Contextual Info: mm dd INTEGRATED CIRCUITS FROM MOTOROLA 1 ! I DO MC2000 Series 0 to +75°C MC2100 Series (—55 to +125°C) M TT L II integrated circuits comprise a family of transistor-transistor logic designed for general purpose digital applications. The family has a high operating speed (30-50

fzh 141

Abstract: FZH 131 fzh 105 fzh 115 FZH 105 A MC2003 FZH 121 MC2073 MC2100 MC2002
Contextual Info: ged dd INTEGRATED CIRCUITS FROM MOTOROLA l ! l l DO MC2000 Series 0 to +75°C MC2100 Series (—55 to +125°C) M TT L II integrated circuits comprise a family of transistor-transistor logic designed for general purpose digital applications. The family has a high operating speed (30-50

2tj transistor

Abstract: A1786 sanyo s-w 1000 MARKING 3512B pnp transistor 400V 500mA C4646 2SA1786 2SC4646 3512B en3512
Contextual Info: 7 cH 7 0 ? b DDlSbST T ib O rdering num ber: E N 3 5 1 2 B 2SA1786/2SC4646 N0.35 12B k 2SA1786:PNP Epitaxial P lanar Silicon Transistor 2SC4646:NPN Triple Diffused Planar Silicon Transistor SAXYO i High Voltage Driver Applications F e a tu re s • Large current capacity Ig = 2A

Contextual Info: Bulletin PD-20615 rev. B 11/03 HFA15TB60S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • 2 VF = 1.7V Qrr * = 84nC Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation

HFA15TB60S

Abstract: IRFP250 SMD-220 MAR 618 transistor
Contextual Info: Bulletin PD-20615 rev. B 11/03 HFA15TB60S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • 2 VF = 1.7V Qrr * = 84nC Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation

TRANSISTOR SMD MARKING CODE DM

Abstract: transistor smd code marking tm HFA15TB60S IRFP250 SMD-220 TRANSISTOR SMD MARKING CODE 2x N smd marking dt2
Contextual Info: Bulletin PD-20615 rev. B 11/03 HFA15TB60S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • 2 VF = 1.7V Qrr * = 84nC Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation

2SC4455

Abstract: 2SC4454 2061a
Contextual Info: Ordering number:EN2814 NPN Epitaxial Planar Silicon Transistor 2SC4455 High-Speed Switching Applications Features Package Dimensions • Fast switching speed. · Low collector saturation voltage. · High gain-bandwidth product. · Small collector capacity.

2SC2061

Abstract: la 7820 T103
Contextual Info: R O H M CO LTD ' ~ 40E J> 7820= ^ h J7 > y X # /T ran sisto rs GGOSbSS 7 BRHM 2S C 2061 T ^ - a T NPN y «;=!> bÿ>yz$ i^S^liaiiffl/M edium Power Amp. lEpitaxial Planar NPN Silicon Transistor 2SC2CS1 sifW'A'vli-7- • i+ïfi'îJ'jÈH/Diinensions Unit : mm

Contextual Info: Ordering number:ENN2814 NPN Epitaxial Planar Silicon Transistor 2SC4455 High-Speed Switching Applications Features Package Dimensions • High-speed switching. · Low collector saturation voltage. · High gain-bandwidth product. · Small collector capacity.

1949b

Abstract: 2SC3776
Contextual Info: Ordering number: EN 1949B 2SC3776 N0.1949B NPN Epitaxial Planar Silicon Transistor SAßiYO UHF Oscillator, Mixer, Low-Noise Amp, _ Wide-Band Amp Applications Applications . UHF frequency converters, local oscillators, low-noise amplifieres, wide­

2005A

Abstract: 2SC3777 pc 2004A B
Contextual Info: Ordering number : EN 1 950B 2SC3777 N0.195OB J NPN Epitaxial Planar Silicon Transistor SA iYO UHF Oscillator, Mixer, Low-Noise Amp, _ Wide-Band Amp Applications Applications . UHF frequency converters, local oscillators, low-noise amplifieres, wide­

2SA1438

Abstract: 71ti 2sa143 nhp relay SC-51
Contextual Info: Ordering number: EN 1857B 2SA1438 N0.1857B PNP Epitaxial P lanar Silicon Transistor SAiYO i H igh hpE, Low-Frequency General-Purpose Amp Applications Applications . Voltage regulators, relay drivers, lamp drivers, electrical equipment Features . Adoption of MBIT process

S74B

Abstract: NP5J TRANSISTOR MARKING YB 2SC3065 2SC306 LN 2003a
Contextual Info: SANYO SEMICONDUCTOR CORP 3S E D ? cic]7D7t DDGflflm 1 wa .T-Z9-27 NPN Epitaxial Planar Silicon Composite Transistor 2 029A Differential Amp Applications S74B Applications . Differential amp, current mirror. . Features . Excellent in thermal equilibrium differential amp.

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

Contextual Info: bbS3T31 OQEbOSfi 161 H A P X Philips Semiconductors NPN general purpose transistor 2PD602; 2PD602A N AUER PHILIPS/DISCRETE FEATURES Objective specification b?E J> PIN CONFIGURATION • Large collector current • Low collector-emitter saturation voltage. DESCRIPTION

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

transistor 20595

Contextual Info: TCPT1300X01 www.vishay.com Vishay Semiconductors Subminiature Transmissive Optical Sensor with Transistor Output FEATURES • Package type: surface mount Pin connection Top view • Detector type: phototransistor • Dimensions L x W x H in mm : 5.5 x 4 x 4

TCPT1300

Contextual Info: TCPT1300X01 www.vishay.com Vishay Semiconductors Subminiature Transmissive Optical Sensor with Transistor Output FEATURES • Package type: surface mount Pin connection Top view • Detector type: phototransistor • Dimensions L x W x H in mm : 5.5 x 4 x 4

Contextual Info: TCPT1350X01 www.vishay.com Vishay Semiconductors Subminiature Transmissive Optical Sensor with Transistor Output FEATURES • Package type: surface mount Pin connection Top view • Detector type: phototransistor • Dimensions L x W x H in mm : 5.5 x 4 x 4

Contextual Info: ROHM CO LTD ~ 40E » ? a S Û W QQOSb'iS h 7 > V ^ ^ / T r a n s is t o r s 7 HRHN 2S C 2061 % 2 7 -js r - — N P N h 7 > y z $ l+ S ^ ia H ffl/ M e d iu m Power Amp. ¡Epitaxial Planar NPN Silicon Transistor V1-5JViVvIi-y • ii-Jfi'^jilS/Dimensions Unit : mm