TRANSISTOR 1FT Search Results

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

sot363 1ft

Abstract: 1Ft SOT363 1Ft TRANSISTOR SOT363 6 BC847BS BC847BS BC857BS BP317 MARKING CODE 1Ft sot363 bc847bs mcc
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET MBD128 BC847BS NPN general purpose double transistor Product specification File under Discrete Semiconductors, SC04 1997 Jul 14 Philips Semiconductors Product specification NPN general purpose double transistor FEATURES BC847BS

1Ft SOT363

Abstract: sot363 1ft 1Ft TRANSISTOR BC847BS Philips
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BC847BS NPN general purpose double transistor Product specification Supersedes the data of 1997 Jul 14 1999 Apr 28 Philips Semiconductors Product specification NPN general purpose double transistor

1518 B TRANSISTOR

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

8B123

Abstract: 2SB1232 2SD1842 1SB12
Contextual Info: |~Ordering number: EN 3261A 2SB1232/2SD1842 2SB1232 : P N P Epitaxial Planar Silicon Transistor 2SD1842 : N P N Triple Diffused Planar Silicon Transistor 100V/40A Switching Applications Featu res •Large current capacity and wide ASO. •Low saturation voltage.

Helipot

Abstract: JAN2N5431 MIL-STD-750-Test capacitor ttc 342 J3 DIODE ST JANTX2N5431 20.000H unijunction application note
Contextual Info: MIL-S-19500/425 USAF 23 Sept 1969 V Mil S Sii CONDUCTOR DEVICE- TRANSISTOR. PN. SILICON. UNIJUNCTION JAN2N5431, and JANTX2N5431 1. SCOPE Scope. - This speciflcation covers the detail requirements for a PN, silicon, unijunction transistor. The prefis "TX” is used

bu2508df

Abstract: BU250BDF 2T3 transistor sot199
Contextual Info: N AUER PHI LIP S/DISCRETE bTE D • 1^53^31 D02Ö3S7 672 * A P X Product Specification Philips Semiconductors_ Silicon Diffused Power Transistor BU2508DF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

et1600

Abstract: Japanese Transistor TRANSISTOR P 3 80ng transistor N J
Contextual Info: VISHAY Vishay Telefunken T Classification Chart for Opto Couplers G e n e ra l p u rp o s e CTR>I0% Standard 4N25/2<> a Transistor output -, * - 4 N 3 Ï-3 7 !. TRMÔWE. I B ase n.c. |- Transistor output H igh CTR Darlington output American pin connection

HMXR-5001

Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001
Contextual Info: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog

Contextual Info: h ~7> y 7, $ / T ransistors DTD133HK D TD133HK T - 'v io n '7 > -> * * $ Digital Transistors Includes Resistors h 7 > v 7 ^ 7 <f 7 ^-/Transistor Switch 1ftfl^ fè g l/D im e n s io n s (Unit : mm) 2.9±0.2 ft, l.9±0.2 0 . 8 ± 0.1 2) (1) GND (2) IN (3) OUT

BUK457-600B

Contextual Info: Product Specification Philips Semiconductors PowerMOS transìstor GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

1Ft TRANSISTOR

Abstract: marking code 1ft Bc857bs
Contextual Info: Philips Semiconductors Product specification NPN general purpose double transistor FEATURES BC847BS PINNING • Low collector capacitance PIN DESCRIPTION • Low collector-emitter saturation voltage 1 ,4 emitter TR1; TR2 • Closely matched current gain 2, 5

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

transistor 1BT

Abstract: 1Gt transistor 1bt npn 1Ft SOT323 npn 1bt 1bt transistor marking code 1gt 1Ft TRANSISTOR 1gt MARKING TRANSISTOR 1gt
Contextual Info: Central BC846W SERIES BC847W SERIES TM Semiconductor Corp. SURFACE MOUNT SUPERminiTM NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BC846W and BC847W Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface

2SD2318F5

Contextual Info: v7> £ /Transistors 2SD2318F5 E M 2 S D 2 3 1 8 • W F S r W & ifc y u - l - m N P N ' > V z i > Trjp|e Transistor Triple Diffused Planar NPN Silicon Transi; «HE/Low Freq. Power Amp. 1ftff^&ES/'Dim ensions U nit: mm h FE = 1000 (Typ.) 2) V c e (sat) VCE (sat)=0.5V(Typ.)

2SC4458

Contextual Info: Ordering num ber: EN 3329 I SA ft/O i _ No.3329 2SC4458 NPN Triple Diffused Planar Silicon Transistor Switching Regulator Applications F eatu re s • High breakdown voltage, high reliability •Fast switching speed • Wide ASO • Adoption of MBIT process

transistor 21Y

Abstract: 2N1556 2N1556A TRANSISTOR 3052 2N1553A 2N1554A 2N1555A 2N1555 J717 2N1553
Contextual Info: MIfc-a-Î9500/3 31ACEL 8 February 1971 SUp ERSE d M ; MIL-S-19500/331 EL) 5 May 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP. GERMANIUM, POWER TYPES 2N1553A THROUGH 2N1556A I. SCOPE 1.1 Scope.- This specification covers the detail requirements

transistor smd 1FT

Abstract: AT12L
Contextual Info: W h a lH E W L E T T $ mLKM PACKARD Hermetically Sealed, Transistor Output Optocouplers for Analog and Digital Applications 4N55* 5962-87679 HCPL-553X HCPL-653X Technical Data HCPL-655X 5962-90854 HCPL-550X ‘ See matrix for available extensions. Features

2SC1424

Abstract: 2SC4090 017 545 71 32 02 2SC2026
Contextual Info: NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES_ • LOW NOISE FIGURE: < 3 dB at 500 MHz • HIGH GAIN: 15 dB at 500 MHz • HIGH GAIN BANDWIDTH PRODUCT: 2 GHz 3 GHz for the NE73435 I • SMALL COLLECTOR CAPACITANCE: 1 pF

transistor marking 75s

Contextual Info: 2SK2417 T O SH IB A TOSHIBA FIELD EFFECT TRANSISTOR i SILICON N CHANNEL MOS TYPE tt-M OSV <; k i 17 û HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS •