TRANSISTOR 1501 Search Results

100 watt transistor

Abstract: RF Transistor 1500 MHZ
Contextual Info: ERICSSON ^ PTB 20046 1 Watt, 1477-1501 MHz Cellular Radio RF Power Transistor D escription The 20046 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1477 to 1501 MHz. Rated at 1 watt minimum output power, it may be used for both CW and PEP

9434

Abstract: RF 1501 100 watt transistor
Contextual Info: e PTB 20046 1 Watt, 1465–1513 MHz Cellular Radio RF Power Transistor Description The 20046 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1465 to 1501 MHz. Rated at 1 watt minimum output power, it may be used for both CW and PEP

trr 30-06xx2

Abstract: 30-06xx2 TRR25-10XX2 II10-04L5
Contextual Info: S E A BROüJ N/ ABB □ □40300 S. EMI C0h □□□□SOS 3 ' o I 1 J V - 5 is s a Transistor-Module T R R . Transistor-Modules TRR. 2 Leistungstransistoren m it 2 Freilaufdioden 2 Power transistors with 2 free wheeling diodes Transistor Type/Type Vcex

1501 ic

Abstract: RF Transistor 1500 MHZ
Contextual Info: ERICSSON ^ PTB 20046 1 Watt, 1465-1513 MHz Cellular Radio RF Power Transistor Description T he 20046 is a c la ss A B , N PN , com m on emitter R F power transistor intended for 26 V d c operation from 1465 to 1501 M H z. Rated at 1 watt minimum output power, it m ay be used for both C W and P E P

2N2464

Abstract: TO-59 Package TO114 package SIS 672 2N2210 transistor 2N2210 TO111 package TO61 package 2N3725 ultra low noise NPN transistor
Contextual Info: SME D GENERAL TRANSISTOR CORP BTaöODl 00QG07M Q General Transistor Corporation 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 SMALL SIGNAL TRANSISTORS NPN General Purpose Typ» No, Plot (mW) VCEO

MUN5331DW1T1

Abstract: LM3661TL-1.25
Contextual Info: MUN5311DW1T1 Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base

2N2464

Abstract: transistor 2n2270 2N6369 D 756 transistor
Contextual Info: GENERAL TRANSISTOR CORP 2ME D • BTaflODl 00QD074 0 ■ General Transistor Corporation "T 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 SMALL S IG N A L TRANSISTORS NPN General Purpose Typ» No,

ic 20192

Abstract: 20192 RF Transistor 1500 MHZ
Contextual Info: ERICSSON ^ PTB 20192 75 Watts, 1465 -1513 MHz Linear Power Transistor Preliminary Description Key Features The 20192 is a class AB, NPN, common emitter RF Power Transistor intended for26VDC operation across the 1465 -1513 MHz frequency band. It is rated at 75 Watts output power for

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

MG1007-42

Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
Contextual Info: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are

2N4839

Abstract: TO114 package 2N5860 2N1724A 2N3714 2N3715 2N3716 2N3789 2N3790 2N3792
Contextual Info: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 DODOD^ fi ■ General Transistor Corporation CASE TO-3, TO-39 lc MAX =3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3 - o i

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR KST10 VHF/UHF TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ollector Base Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollecto r D issipation Storage Tem perature Therm al R esistance junction to Am bient

2N5302 EB

Abstract: 2N1463 2n4271
Contextual Info: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 D O D O D ^ fi ■ General Transistor Corporation CASE TO-3,TO-39 lc MAX = 3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3

Contextual Info: ERICSSON ^ E 20124* 40 Watts, 1.465-1.513 GHz Cellular Radio RF Power Transistor D e s c rip tio n The 20124 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.465 to 1.513 GHz. Rated at 40 watts minimum output power, it may be used for both CW and PEP

2n5863

Abstract: MJ2965 TO61 package 12J5 2N8307 2n3713 2N4901 2n3447
Contextual Info: GENERAL TRANSISTOR CÔRP 54E D • 3=120001 OOOOObl 5 General Transistor Corporation CASE T -3 3 -0 1 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 T O -3 Ic(M A X ) a 2 - 5 0 A y\A^EO(sus) : ~ ^ 5 - 5 0 0 V

dupline 8 channel receiver 1501 700

Abstract: dupline 8 channel receiver GAd 1501 Carlo GAD1501700 Carlo Gavazzi Group dupline Gavazzi dupline receiver Carlo Gavazzi Group dupline
Contextual Info: Du line Receiver for Digital Signals Type GAD 1501 Fieldbus Installationbus • 8-channel receiver • PNP transistor outputs source • Load: 8 x 100 mA/30 VDC • D-housing • Plug-in type module • LED-indications for supply and Dupline® carrier

nec 501 t

Abstract: iei-1209 MEI-1202 PA1501 surge absorber ID90C
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET NEC COMPOUND FIELD EFFECT POWER TRANSISTOR ^ IIL ™ 'jl /¿P A 1501 r N-CHANNEL POWER MOS FET ARRAY

cb 237

Abstract: BD235 bd233
Contextual Info: TO-126 Plastic-Encapsulate T ra n s is to rs ^ ^ BD233/235/237 TRANSISTOR NPN FEATU RES Pcm: 1.25 W (Tamb=25lC) Ic m : 2A V(BR)cbo : BD233 : 45V BD235 : 60V BD237: 100V ion temperature range T s tg : -65TC to + 1501c T j: 150°C ELECTRICAL CHARACTERISTICS

nec 501 t

Abstract: NEC pa 1501 n channel fet array UPA1501H
Contextual Info: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 DATA SHEET NEC FIELD EFFECT POWER TRANSISTOR M<COMPOUND IJ‘IJ ‘IIIJIJ jlJI juP A 1501 r N-CHANNEL POWER MOS FET ARRAY

Contextual Info: PowerTech BIG IDEAS IN • rn t BK! POWER’ 150 AMPERE TRANSISTOR PT-2523 PT-2524 FEATURES PT2S23 400V 450V . V,wo V.' l P T-S 5Ï4 . . -1501.' ‘J r- o . i= t t j ai , - 500V V, K- . I. U Po 'V 1 1 ! 0V . . IOGA 150A . . . S2SW ~ t ~ I.0O - 1

2sA1186 transistor

Abstract: transistor p100 2SA1186 Y130 Y-140 2SC2837 Y140 Y160 5060 transistor 2sc2837 transistor
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1186 DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2837 APPLICATIONS ·For audio and general purpose applications

2SC2838

Abstract: 2SA1187 transistor 2SC2838 y130 y140 p120 TRANSISTOR P90 P100 P110 of transistor P100
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1187 DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2838 APPLICATIONS ·For audio and general purpose applications

2SA1186

Abstract: transistor p100 2SC2837 2sA1186 transistor transistor p90 y130 2sc2837 transistor transistor pnp VCEO 12V Ic 1A Y140 Y160
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1186 DESCRIPTION •High Collector-Emitter Breakdown VoltageV BR CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2837 APPLICATIONS ·For audio and general purpose applications

12vdc motor forward reverse control diagram

Abstract: star delta wiring diagram motor start y VFAS1 igbt based induction furnace circuit diagram toshiba electric motor data sheet 90kW treadmill motor controller free circuit diagram of treadmill 5kw inverter circuit diagram 12-pulse induction furnace diagram wiring mitsubishi elevator
Contextual Info: Transistor Inverter High-performance Inverter TOSVERT Flexible for you For your Commercial facilities, offices and factories • Feature: Reduce high-frequency noise*1, Reduce harmonics*1 • Applications: Washing machines, Treadmill, Showcase refrigerators, Medical equipment,