TRANSISTO 333 Search Results

saa 7321

Contextual Info: International Rectifier Preliminary Data Sheet No. PD-9.1331 IR H M 7 1 6 0 IRHM 8I 6O REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTO R 10OVolt, 0.045Q, MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate virtual immunity to SEE fail­

1084 GE

Abstract: IRG4PSC71
Contextual Info: International IÖR Rectifier PD - 91684 IRG4PSC71 KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTO R WITH ULTRAFAST SO FT RECOVERY DIODE Features Vces = 6 0 0 V • H ole-less clip /p re ssu re m ou nt pa ckag e com p atib le

KS621K3010

Abstract: powerex ks62 14B21
Contextual Info: 7294621 POVIE REX IN C 7?^ ?1 □ D I]Q i:i l l ~ ~ Y Single Darlington TRANSISTO R Modules Dim A B C D E F G H J K L M N Inches 4.260 Max 3.660 ±.012 2.44 Max 1.89 ±.012 1.00 Max 1.42 Max 1.141 .827 .512 .354 .630 .256 .256 Dia 4 Millimeters 108 Max 93 ±0.3

Contextual Info: NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES DESCRIPTION • LOW COST T he N E 9 44 series o f NPN silicon epitaxial b ipo lar transisto rs is intended fo r use in ge ne ral purpose U H F o scilla to r and m ixer applicatio ns. It is su ita b le fo r au tom otive keyless entry

C01A

Contextual Info: S M -8 DUAL NPN M EDIU M POWER HIGH GAIN TRANSISTO RS ZDT619 ISSU E 1 - NOVEMBER 1995 cn Ci LL Cz cm ci Cic n n~i B, m Ei ~n Bz ~ n Eî SM-8 8 LEAD SOT223 PARTMARKING DETAIL - T619 ABSOLUTE M A X IM U M RATINGS. PARAMETER SYM BO L ^ V A LU E U N IT 50 V

1307 TRANSISTOR equivalent

Abstract: equivalent transistor n 4212 rca 40936 3431J Single-Sideband equivalent transistor 4212 40936 92LS-I87 rca rf transistor rca transistor
Contextual Info: File No. 551 RF P o w er T ransisto rs Solid State Division 40936 20-W P E P E m itte r-B a lla s te d O verlay Transisto r For 2- to -3 0 -M H z Single-Sideband Linear A m p lifie r A pp licatio n s Features: m For class A o r class B am plifier service

2n2301

Abstract: 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815
Contextual Info: . GENERAL DIODE CORP d T J 3 f l b T 72 0 Sb GD OOB D 4 ö | 7 - - 2-*? ~ D SILICON P L A N A R TRANSISTO RS — S M A L L SIG N A L VI TYPE 2N72» 2N727 2N8E9 2N869A 2N92S 300 •300 360 360 300 2N929A 2N930 2N930A 2N1S72 2N1573 NPN NPN NPN NPN NPN • 2N1S74

lm 3178

Abstract: transistor tt 2170 TRANSISTOR TT 2190 nec 8525 al 232 nec lm 3178 t 2190 ic for lg tv 8001 SI T460-8525 lm 4011
Contextual Info: NEC Com pound Transisto r BN1A4Z y =i> js p n p x # ¥ -fï m o / • mm nm Ri o B A 1 A 4 Z i 3 > 7 " ' j y > ; i ] T lÈ fflt'ë i- t o *Ê*tH*5Êfê (Ta = 25°C) m «§ g -?• TE fi l& V CBO -60 V 3 1 / ^ ' X ; -/9f^W ±. VcEO -50 V z- ì "/ 9 • ^ — xfa]'SEE

2sk520

Abstract: 3sk131 cross 2S880 TRANSISTOR AF 416 pnp 2SK738 2SK739 3SK133A 2sc3554 transistor pnp 3906 2SK508
Contextual Info: TY P E NO. CROSS IN D E X TYPE No. A PPLIC ATIO N & STRUCTURE PACKAGE PAGE 1S2835 ANODE COMMON SWITCHING DIO DE M IN I MOLD 83 1S2836 ANO DE COMMON SWITCHING DIODE M IN I MOLD 83 1S2837 CATHODE COMMON SW ITCHING DIODE M IN I MOLD 86 1S2838 CATHODE COMMON SWITCHING DIOOE

Contextual Info: Contents Block O peration. 2 Terminal Functions. 2

DVP-14SS2

Abstract: DVP12SA2 DVP20SX2 delta plc cable pin diagram RS-485 delta plc cable pin diagram RS-232 DVP14SS211T DVP14SS211R DVP20SX211R DVP20SX211T DVP14SS2
Contextual Info: DELTA ELECTRONICS, INC. w w w .d e lta .c o m .tw /ln d u s tr la la u to m a tlo n ÈABU H e a d q u a r te r s D e lta E le c tr o n ic s , In c . T aoyuanl 31 -1, X ingbang Road, G uishan Industrial Zone, Taoyuan C o unty 33370, Taiwan, R.O.C. TEL: 886-3-362-6301 / FAX: 886 -3-362-726 7

transisto 333

Contextual Info: KSD1221 NPN EPITAXIAL SILICO N TRAN SISTO R LOW FREQUENCY POW ER AMPLIFIER • Low Collector Emitter Saturation Voltage • Complement to K SB 9 0 6 ABSOLUTE MAXIMUM RATINGS Characteristic Sym bol Rating Unit Collector B ase Voltage VcBO 60 V Collector Emitter Voltage

transistor mu10

Abstract: 0A81 thyristor 300 volt ujt as a relaxation oscillator motorola ujt Unit junction transistor UJT MU10 MU20 ujt trigger circuit Unijunction
Contextual Info: MOTOROLA SC DIODES/OPTÔ BSE I> b3b72SS QQÖ1213 3 • 7-3 7 -Ä / MU10 MU20 PN Unijunction Transistors Silicon Annular Unijunction Transistors . . . d e s ig n e d fo r e c o n o m ic a l, ge n era l p u rp o s e u s e in pu lse , tim in g , o s c illa to r a nd

Contextual Info: SAMS UN G SEM ICO ND UC TO R INC MJE170 14E 0 | 7 ^ 4 1 4 2 OOOÎbâT E | PN P EPITAXIAL SILIC O N TRAN SISTO R T " 3 3 - / 7 LO W P O W E R A U D IO A M P L IF IE R LO W CURRENT, HIGH S P E E D SW IT C H IN G A P P LIC A T IO N S A B S O L U T E M A X IM U M R A T IN G S Ta= 2 5 ° C

TERMOPAR tipo k

Abstract: DVP-10SX DVP16SP11R DVP16SM11N DVP16SP11T DVP-08SN DVP-40EH DVP-14SS DVP-32EH DVP14SS11R2
Contextual Info: DELTA ELECTRONICS, INC. www.d*l a.cem.iwiInduttrtil«ut«imalloii IABU Headquarter» Da Ita E lectron ics, Inc. Taoyuanl 31-1, Xlngbang Road, Gulshan Industrial Zone, Taoyuan County 33370, Taiwan, R.O.C. TEL: 886-3-362-6301 / FAX: 886-3-362-7267 Asia Delta E lectron ics (Jiang Su Ltd.

600V IGBT Current Sensing Channel Driver

Contextual Info: Data Sheet No. PD-6.130-G International Iö R Rectifier IR2122 CURRENT SENSING SINGLE CHANNEL DRIVER Features • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 10 to 20V

Contextual Info: PD 9.1418 International [^Rectifier IRGMH40F PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • • • • • • • Eletrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz ~ 8 kHz

PH BD139

Abstract: BD139 philips bd139 application note BD139
Contextual Info: DISCRETE SEMICONDUCTORS BD135; BD137; BD139 NPN power transistors 1999 Apr 12 Product specification Supersedes data of 1997 Mar 04 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN power transistors BD135; BD137; BD139

Contextual Info: DISCRETE SEMICONDUCTORS BD131 NPN power transistor 1999 Apr 12 Product specification Supersedes data of 1997 Mar 04 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN power transistor BD131 FEATURES PINNING • High current max. 3 A

bf862

Contextual Info: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET BF862 N-channel junction FET Objective specification Philips Sem iconductors 1999 May 14 PHILIPS Philips Semiconductors Objective specification N-channel junction FET BF862 FEATURES PINNING SOT23 • High transition fre q u e n cy fo r excellent se n sitivity in

IC pt 2399 CIRCUIT DIAGRAM

Abstract: AT-31625 Z-135 transistor pn 2222a Z-179 A74 SOT-223 sn 0426 z15a Z-156 Z156
Contextual Info: W hn% H E W L E T T 1"UM P A C K A R D 4.8 V NPN Common E m itter M edium Pow er O utput T ransistor Technical Data AT-31625 F eatu res • 4.8 V olt O peration • +28.0 dBm P out @ 900 MHz, Typ. MSOP-3 Surface M ount P lastic Package O utlin e 25 • 70% C o llecto r E fficien cy

transistor NEC K2500

Abstract: nec k2500 NEC K2500 Transistor component NEC K2500 mosfet CD4558 cq met t3.15A 250V k2500 N-Channel MOSFET c5042f TO-92 78L05 voltage regulator pin configuration i ball 450 watt smps repairing
Contextual Info: A merican Gaming and Electronics, Inc. represents over 200 vendors and carries thousands of items. This catalog is just a partial listing of our products. If for any reason, you do not see the item s you are searching for, please call your local sales representative. The sales

33363

Contextual Info: O rder this docum ent by M C33363/D M M O T O R O L A Advance Information High Voltage Switching Regulator T he M C 33363 is a m on olithic high volta ge sw itch ing reg ulator that is spe cifica lly designed to o p era te from a rectified 240 Vac line source. T his

PIC1650-020

Abstract: ER1400 equivalent ER1400 4-digit seven segment display pic 100x14 AY-3-2012 AY-3-8475 CT2012 CT2017 IN914
Contextual Info: INSTRUM ENT PIC1650-020 ER1400 Economega IV TV PPL Tuning System Control E R 1 4 0 0 • Autom atic S w eep Tuning Option (with Autom atic Fin e Tune) ■ Fin e Tun e in 5 0K H z S te p s ( Manual o r A utom atic) ■ T w o Digit Chan nel N um ber D isp lay