TP4386 Search Results

2N2458

Abstract: 2N2537 texas 2N2551 2N2457 2N2429 SGS-ATES c426 2N2425 2n2398 2N2431 BF253
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2SC562 2N479 2N479A BF253 KT215E1 2N2693 KSC2715 2SC2669 2SC2715 2SC380 2S731 2S731 2S731 ~~g~~~~ 25 30 35 40 45 50 2SC941 2SC941 BFR36 BFR36 2N2309 TP4386

bfw34 diode

Abstract: 2SC562 BSX70 LOW-POWER SILICON NPN BFR36 NA31 L/bfw34 diode 2SC941 bfw34
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2SC562 2N479 2N479A BF253 KT215E1 2N2693 KSC2715 2SC2669 2SC2715 2SC380 2S731 2S731 2S731 ~~g~~~~ 25 30 35 40 45 50 2SC941 2SC941 BFR36 BFR36 2N2309 TP4386

Contextual Info: TP4386 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)40 I(C) Max. (A)500m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: SPRAGUE/SEMICOND 8514019 GROUP SPRAGUE. =13 D • Ô5 1 3 Ô S 0 D 0 0 3 5 Ö7 SEM ICO N D S/IC S 93D 5 ■ 03587 P . T " " PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS atTA = 25°C DC Current Gain

TP2222

Abstract: TP2222A TP2907A TP3116 MPS6566 TP2483 MPS6515 MPS6516 MPS6517 MPS6518
Contextual Info: ^ Econ olin e R P la stic -M o ld e d If H U U C Silicon S E P T R Transistors GENERAL-PURPOSE SMALL-!IIGNAL AMPLIFIERS >oc < o o. _i Type No. Pd D -C C U R R E N T G A IN h fE Lim ts T a = V (BR) V(BR) V(BR) I c b o C onditions VcE(SAT) 25 C C BO CEO E BO

TP4506

Abstract: TP5000 AR803 TP6244 thermistor SCK D54 TP5056 R767 TP5310 TP6311 TP4765
Contextual Info: 1 2 HD# 0:63 1 1 3 4 N C 5 6 HA#(3:31) C D 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 1,4 29 H_REQ#(0:4) 30 31 1 32 2 33 4 35 1,4 36 DBI#(0:3) 1 38 2 39 3 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 1, 4 1 1, 4 1 4 4 1, 4

2N5129

Abstract: 2n4141 TP5059 2N3904 2N3974 2N3976 2N4123 2N4124 2N4140 2N4286
Contextual Info: S P R A G U E / SE MI CO ND GROUP 8514019 SPRAGUE. =13 D • Ô513ÔS0 D0035Ö7 5 ■ S E M IC O N D S /IC S 93D 03587 P . T " " PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS atTA = 25°C DC Current Gain

Allegro 40e

Abstract: 2N5129 2N3904 2N3974 2N3976 2N4123 2N4124 2N4140 2N4141 2N4286
Contextual Info: ALLEGRO MICROSYSTEMS INC 8 5 1 4 0 19 S P R A G U E . ^3 D • 05GM33Ö 0003507 SEMICONDS / IC S 4 ■ ALGR 0 3 5 8 7 2>\ 93D ~T^ PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘2N’ and ‘TP’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C Device

TP2222A

Abstract: ct 60 transistor TP2222 TP5816 TP2906A kd pnp TP2907A tp3061 TP2221 TP2221A
Contextual Info: € # SPRAGUE BIPOLAR TRANSISTORS « BIPOLAR TRANSISTORS THE MARK OF RELIABILITY SERIES TP TRANSISTORS • S m a ll -s ig n a l T O - 9 2 plastic transistors. Su g ge s te d replace­ m e n t s f o r 2 N series d e v i c e s a v a i l a b l e in T O - 5 , T O - 1 8 , T O - 3 9 ,