TO92MOD Search Results

TA78L008AP

Abstract: A78L05 A78L 78LXX
Contextual Info: Voltage Regulators 1C 3-Terminal Regulators 1 Function Type No. TA78DS05BP 5 TA78DS06BP 6 TA78DS08BP TA78DS09BP TA78DS10BP Low output current Low dropout 8 9 TA78DS12BP 12 TA78DS15BP 15 TA78DS05F 5 TA78DS06F 6 TA78DS08F Low output current 8 TA70DSO9F Low dropout

BENT LEAD transistor TO-92 Outline Dimensions

Abstract: 2SC2712 equivalent 4TE12 diode ssc J Fet marking 2 AW 2SC2873 equivalent 90105 toshiba ultrasonic atomizing SMD TRANSISTOR MARKING 5c
Contextual Info: 5. PA C K A G E FO R M S 5.1 PACKAGE FORM SELECTION TABLE 5.1.1 SUPER-MINI DEVICES S-MINI (SC-59 , SMQ (SC-61), SMV, SM6) PACKAGING FORM PACKAGE SPECIFI­ CATION OUTLINE Pack PACKAGE UNIT - e TE85L Taping EXTERIOR Unit: mm » » » 3000 pcs/ Reel TE85R TE85N

78xx voltage regulator

Abstract: REGULATOR IC 78XX TA76494P tl494 equivalent 78xx regulator 79xx voltage regulator 78xx 79xx ic 78xx 431 sot89 TA7824S
Contextual Info: I Polarityj F1 Type No. Function TA7805S 5.7 TA7B06S 6 Input Voltage MAX. V Dropout Voltage TYP .iV l Quiescent Current TYP.(mA) Output Voltage Tolerance 2.0 4.2 ±4% Power dissipation (W) Package Equivalent 7 TA7808S Fixed output voltage 8 TA7809S High output current

2SA1145

Contextual Info: 2SA1145 SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm A U D IO FREQUENCY AMPLIFIER APPLICATIONS. • • • Complementary to 2SC2705. Small Collector Output Capacitance : C0b = 2.5pF (Typ.) High Transition Frequency : f'r = 200MHz (Typ.) M A X IM U M RATING S (Ta = 25°C)

"MARKING TE" US6

Abstract: 2301 mini transistor
Contextual Info: [3 ] Application Information 1. Overview 2. Device Marking [ 3 ] Application Information 1. Overview Toshiba B ias Resistor Transistors BR T s each contain a built-in base series resistor and baseem itter bias resistor. This helps you reduce the parts count in circuits to m iniaturize equipment

2sa965

Contextual Info: SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA965 U nit in mm POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. • Complementary to 2SC2235. = 25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

K2961

Contextual Info: T O S H IB A 2SK2961 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-tt-MOSV 2 S K2 9 61 HIGH SPEED SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATION • Low Drain-Source ON Resistance

2SC1627A

Contextual Info: 2SC1627A SILICON NPN EPITAXIAL TYPE PCT PROCESS U nit in mm DRIVER STAGE AM PLIFIER APPLICATIONS. VOLTAGE AM PLIFIER APPLICATIONS. • • Complementary to 2SA817A. Driver Stage Application of 30 to 35 W atts Amplifiers. M A X IM U M R ATING S (Ta = 25°C)

transistor 1127

Abstract: transistor 2sk2961
Contextual Info: TOSHIBA 2SK2961 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-tt-M O SV 2SK2961 HIGH SPEED SWITCHING APPLICATIONS RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER INDUSTRIAL APPLICATIONS Unit in mm 5.1 M AX. APPLICATION • • • • Low Drain-Source ON Resistance : RüS(ON) = 0.20 (Typ.)

2SA949

Contextual Info: TOSHIBA 2SA949 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2SA949 Unit in mm DRIVER STAGE AUDIO AM PLIFIER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. • • • 5 1 MAX. High Breakdown Voltage : V£Eo = —150V Low Output Capacitance : Cob = 5.0pF Max.

Contextual Info: SILICON PNP EPITAXIAL TYPE 2SA1761 U nit in mm POWER AMPLIFIER APPLICATIONS. POW ER SW ITCHING APPLICATIONS. • • • Low Collector-Emitter Saturation Voltage : v CE sat = - 0.5V (Max.) (Ic = - 1.5A) High Speed Switching Time : tstg = 0.2(u s (Typ.) Complementary to 2SC4604.

Contextual Info: 2 S A 1811 SILICON PNP EPITAXIAL TYPE Unit in mm LO W FREQ U EN CY AM PLIFIER APPLICATIO N S. DRIVER STA G E A M PLIFIER A PPLICA TIO N S. 5.1 MAX SW ITCHING A PPLICA TIO N S. • • Excellent hpE Linearity : hFE 2 = 35 (M in.), (V c e =:-2 V , I c = —300mA)

2SA116

Contextual Info: 2SA1160 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1160 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A)

A1680

Abstract: 2SA1680 2SC4408
Contextual Info: 2SA1680 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1680 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ•エミッタ間飽和電圧が低い。: VCE (sat) = −0.5 V (最大) (IC = −1 A)

c2705

Abstract: c2705 transistor 2sc2705 2SA1145 C2705 data
Contextual Info: 2SC2705 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2705 Audio Frequency Amplifier Applications Unit: mm • Small collector output capacitance: Cob = 1.8 pF (typ.) • High transition frequency: fT = 200 MHz (typ.) • Complementary to 2SA1145.

A1761

Abstract: 2SA1761 2SC4604
Contextual Info: 2SA1761 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1761 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −0.5 A) • High-speed switching: tstg = 0.2 s (typ.)

c2236 transistor

Abstract: transistor C2236 C2236 NPN Transistor C2236 c2236 transistor equivalent C2236 Y 2SC2236 2SA966
Contextual Info: 2SC2236 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2236 Audio Power Amplifier Applications • Unit: mm Complementary to 2SA966 and 3-watt output applications. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

C2703

Abstract: 2SC2703
Contextual Info: 2SC2703 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC2703 ○ 低周波電力増幅用 • 単位: mm 直流電流増幅率が高い。: hFE = 100~320 絶対最大定格 (Ta = 25°C) 項 目 記 号 定 格 単位 コ レ ク タ • ベ ー ス 間 電 圧

b1457

Abstract: B1457 transistor 2SB1457
Contextual Info: 2SB1457 TOSHIBA Transistor Silicon PNP Epitaxial Type Darlington 2SB1457 Micro Motor Drive, Hammer Drive Applications Power Switching Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1 A) • Low saturation voltage: VCE (sat) = −1.5 V (max)

c2230a

Abstract: C2230 2SC2230 2SC2230 GR 2SC2230A
Contextual Info: 2SC2230,2SC2230A 東芝トランジスタ シリコンNPN三重拡散形 PCT方式 2SC2230,2SC2230A ○ 高耐圧一般増幅用 ○ カラーテレビ B 級音声出力用 • 単位: mm 高耐圧です。: VCEO = 180 V (2SC2230A) 絶対最大定格 (Ta = 25°C)

transistor c4408

Abstract: c4408 c4408 transistor 2SA1680 2SC4408
Contextual Info: 2SC4408 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC4408 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW

Toshiba transistor C2235

Abstract: c2235 transistor C2235 Transistor C2235 2SA965 2SC2235
Contextual Info: 2SC2235 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2235 Audio Power Amplifier Applications Driver Stage Amplifier Applications • Unit: mm Complementary to 2SA965. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit

K2961

Abstract: transistor k2961 2sK2961 equivalent 2SK2961
Contextual Info: 2SK2961 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV 2SK2961 Relay Drive, Motor Drive and DC−DC Converter Application z Low drain−source ON resistance : RDS (ON) = 0.2 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (typ.)

2SC2235

Abstract: C2235 2SA965 c2235 Y
Contextual Info: 2SC2235 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC2235 ○ 電力増幅用 ○ 励振段増幅用 • 単位: mm 2SA965 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C) 項 目 記 号 定