2SA116 Search Results

Contextual Info: 2SA1162 SILICON PNP EPITAXIAL TYPE A U D IO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. U n it in mm • High Voltage and High Current : Vc e O= —50V, IC = —150mA Max. • Excellent h]?E Linearity :hFE (Ic= -0.1mA)/hpE d c = -2mA) = 0.95 (Typ.)

2SA1166

Abstract: 3001 pnp
Contextual Info: AOK AOK Semiconductor P roduct S pecification 2SA1166 S ilicon PNP Pow er T ransistors DESCRIPTION • With MT-200 package • High power dissipation APPLICATIONS • Audio and general purpose applications PINNING see Fig.2 PIN DESCRIPTION 1 Base o Collector:connected to

2SA116

Contextual Info: 2SA1160 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1160 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A)

2SA1166

Contextual Info: SavantIC Semiconductor Product Specification 2SA1166 Silicon PNP Power Transistors DESCRIPTION •With MT-200 package ·High power dissipation APPLICATIONS ·Audio and general purpose applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector;connected to

Contextual Info: 2SA1160 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 160 Unit in mm STROBE FLASH APPLICATIONS. M EDIUM PO W ER AM PLIFIER APPLICATIONS. • 5.1 MAX High DC Current Gain and Excellent hFE Linearity : hFE(l) = 140-600 (Vc e = - I V , Ic= -0 .5 A )

2SA1162

Abstract: 2SC2712 2SA1162 PNP
Contextual Info: 2SA1162 PNP Silicon General Purpose Transistor Elektronische Bauelemente A suffix of "-C" specifies halogen & lead-free SOT-23 3 FEATURES n n n n Collector 3 1 2 A RoHS Compliant Product Low noise : NF= 1dB Typ. ,10dB (Max.) Base L 3 Complementary to 2SC2712.

2SC2712

Abstract: 2SC2712GR 2SC2712-BL 2SC2712-GR 2SC2712-Y 2SC2712Y 2SA1162 2SC2712-O SOT 23 LY 2SC2712-GR LG
Contextual Info: 2SC2712 0.15A , 60V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE Low Noise: NF=1dB Typ. , 10db(Max.) Complements of the 2SA1162 A L 3 3 C B Top View CLASSIFICATION OF hFE

2SC2712

Abstract: 2SA1162 sot-23 Marking LG
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC2712 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURE • Low Noise: NF=1 dB (Typ),10dB(MAX) · Complementary to 2SA1162 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

smd k72 y5

Abstract: K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89
Contextual Info: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2N7002T 2N7002W 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR

Contextual Info: 2SA1163 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1163 Audio Frequency General Purpose Amplifier Applications • High voltage: VCEO = −120 V • Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) Unit: mm = 0.95 (typ.)

Contextual Info: MCC 2SA1162-O 2SA1162-Y 2SA1162-GR
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features PNP Silicon Plastic-Encapsulate Transistor Capable of 0.15Watts of Power Dissipation.

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC2712 Features • NPN Plastic-Encapsulate Transistors Complementary to 2SA1162 Maximum Ratings Symbol VCEO VCBO VEBO IC PC TJ TSTG Rating

2SA1160

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SA1160 TO-92MOD TRANSISTOR PNP 1. EMITTER FEATURE Power dissipation 2. COLLECTOR PCM : 0.9 W (Tamb=25℃) 3. BASE Collector current ICM: -2A Collector-base voltage

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC2712 Features • NPN Plastic-Encapsulate Transistors Complementary to 2SA1162 Maximum Ratings Symbol VCEO VCBO VEBO IC PC TJ TSTG Rating

2SA1162

Abstract: 2SA1162-GR 2SA1162GR 2SA1162Y NF TRANSISTOR
Contextual Info: MCC 2SA1162 2SA1162-O 2SA1162-Y 2SA1162-GR
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • • • • Capable of 0.15Watts of Power Dissipation.

A1162

Abstract: 2SA1162 2SC2712
Contextual Info: TOSHIBA 2SA1162 2 S A 1 162 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. • High Voltage and High Current : VCEO = —50V, IC= -150m A (M ax.) • Excellent hpE Linearity : hpE (Ic = —0.1mA) / hjrj] (Iç; = —2mA) = 0.95 (Typ.)

2SA1162

Abstract: 2SC2712
Contextual Info: 2SA1162 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1162 Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) · Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA)

2SC2712GR

Abstract: 2SC2712 2SC2712Y
Contextual Info: MCC 2SC2712 2SC2712-O 2SC2712-Y 2SC2712-GR 2SC2712-BL
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • Complementary to 2SA1162 x Case Material: Molded Plastic. UL Flammability

2SA1162

Abstract: marking SG transistors MARKING SO
Contextual Info: Transys Electronics L I M I T E D SOT-23-3L Plastic-Encapsulated Transistors SOT-23-3L 2SA1162 TRANSISTOR PNP 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 FEATURES Power dissipation mW (Tamb=25℃) 1. 60¡ À0. 05 0. 35 1. 9 Collector current : 150 mA ICM Collector-base voltage

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

2SA1160

Abstract: A1160
Contextual Info: 2SA1160 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1160 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm hFE が高く直線が良好です。 : hFE (1) = 140~600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (最小)120 (標準) (VCE = −1 V, IC = −4 A)

2Sa1169

Contextual Info: JMnic Product Specification 2SA1169 Silicon PNP Power Transistors DESCRIPTION ・With MT-200 package ・High power dissipation APPLICATIONS ・Audio and general purpose applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base

Contextual Info: 2SA1162 PNP Silicon General Purpose Transistors Elektronische Bauelemente RoHS Compliant Product SOT-23 A suffix of “-C” specifies halogen & lead-free A FEATURES    L 3 Low Noise : NF= 1dB Typ. , 10dB (Max.) Complementary to 2SC2712. Small Package

Contextual Info: 2SA1160 SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm STROBE FLASH APPLICATIONS. M E D IU M PO W ER AM PLIFIER APPLICATIONS. • • High DC Current Gain and Excellent hp-g Linearity : hpE(l) = 140—600 (V c e = - I V , l £ = —0.5A) : hpg(2) =60 (M in.), 120 (Typ.) ( V q e = - IV , I c = -4 A )