TO263-3 PACKAGE Search Results

Carrier tape for TO263 package

Abstract: 16101
Contextual Info: Package Information TO263 DD2-PAK Outline Dimensions 3-pin TO263 Outline Dimensions A E L 2 E 1 C 2 D 1 2 D 1 L 3 L 3 L 4 0 ~ 5 L 1 A A e Symbol B B 2 D e ta il A E 2 C Z D e ta il A ( R o ta te d 9 0 ) Dimensions in mil Min. Nom. Max. A 170 ¾ 185 B 28

6R099

Abstract: ipb60r099cpa PG-TO263-3-2 IPB60R099 6R099A
Contextual Info: IPB60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Q g,typ 600 V 0.105 Ω 60 nC Features • Worldwide best Rds,on in TO263 PG-TO263-3-2 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified

Contextual Info: IPB60R099CPA CoolMOS Power Transistor Product Summary V DS R DS on ,max Q g,typ 600 V 0.105 Ω 60 nC Features • Worldwide best Rds,on in TO263 PG-TO263-3-2 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified

PG-TO263-3-2

Abstract: PG-TO-263-3-2 IPB60R099CPA 6R099 6R099A IPB60R199CPA IPI60R099CPA IPB60R199
Contextual Info: IPB60R099CPA CoolMOS Power Transistor Product Summary V DS R DS on ,max Q g,typ 600 V 0.105 Ω 60 nC Features • Worldwide best Rds,on in TO263 PG-TO263-3-2 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified

DIODE H5 SMD

Abstract: 2n06h5 smd diode H5 70H100 ANPS071E SPB80N06S2-H5 SPP80N06S2-H5
Contextual Info: SPP80N06S2-H5 SPB80N06S2-H5 OptiMOSâ Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • 175°C operating temperature VDS 55 V RDS on 5.5 mΩ ID 80 A P- TO263 -3-2 • Avalanche rated P- TO220 -3-1 • dv/dt rated Type Package

2N06L11

Abstract: ANPS071E SPB80N06S2L-11 SPP80N06S2L-11 Q67060-S6035 2N06L
Contextual Info: SPP80N06S2L-11 SPB80N06S2L-11 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode R DS on 11 mΩ ID 80 A • Logic Level • Avalanche rated P- TO263 -3-2 P- TO220 -3-1 • dv/dt rated Type Package Ordering Code

04n50c3

Abstract: SMD TRANSISTOR MARKING 6C SPA04N50C3 SPB04N50C3 04N50 SPP04N50C3 AN-TO220-3-31-01
Contextual Info: SPP04N50C3, SPB04N50C3 SPA04N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.95 Ω ID 4.5 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1

07N60C3

Contextual Info: SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1 P-TO263-3-2

2n0609

Abstract: Q67060-S6025 Q67060-S6027 SPP80N06S2-09 3140PF 2N060 INFINEON PART MARKING to263
Contextual Info: SPP80N06S2-09 SPB80N06S2-09 OptiMOS =Power-Transistor Product Summary Feature
N-Channel
Enhancement mode
175°C operating temperature VDS 55 R DS on 9.1 m
ID 80 A P- TO263 -3-2
Avalanche rated V P- TO220 -3-1
dv/dt rated Type SPP80N06S2-09 Package

Contextual Info: TO220-3/TO263-3 Voltage Regulator Evaluation Board User’s Guide 2009 Microchip Technology Inc. DS51818A Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.

47N10

Abstract: INFINEON PART MARKING SPB47N10 SPI47N10 SPP47N10
Contextual Info: Preliminary data SPI47N10 SPP47N10,SPB47N10 SIPMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated 100 VDS P-TO262-3-1 RDS on 33 m
ID 47 A P-TO263-3-2 Type Package

2n0607

Abstract: 2n0607 equivalent OPTIMOS TRANSISTOR ANPS071E SPB80N06S2-07 SPI80N06S2-07 SPP80N06S2-07
Contextual Info: SPI80N06S2-07 SPP80N06S2-07,SPB80N06S2-07 OptiMOS
Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated P- TO262 -3-1 VDS 55 RDS on 6.6 m ID 80 A P- TO263 -3-2 Type Package

2N06L11

Abstract: S6035 ANPS071E SPB80N06S2L-11 SPP80N06S2L-11 INFINEON 2N06L11
Contextual Info: SPP80N06S2L-11 SPB80N06S2L-11 OptiMOSâ Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 55 V R DS on 11 mΩ ID 80 A P- TO263 -3-2 • Avalanche rated P- TO220 -3-1 • dv/dt rated Type SPP80N06S2L-11 Package

2n0609

Abstract: 80G60 2n0609 data sheet SPP80N06S209 Q67060-S6027 smd TRANSISTOR code marking 8K ANPS071E SPB80N06S2-09 SPP80N06S2-09 Q67060-S6025
Contextual Info: SPP80N06S2-09 SPB80N06S2-09 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode R DS on 9.1 mΩ ID 80 A • 175°C operating temperature • Avalanche rated P- TO263 -3-2 P- TO220 -3-1 • dv/dt rated Type Package

02N60C3

Abstract: SPB02N60C3 SPP02N60C3
Contextual Info: SPP02N60C3 SPB02N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 3 Ω ID 1.8 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated

02N60C3

Abstract: SPB02N60C3 SPP02N60C3 02N60
Contextual Info: SPP02N60C3 SPB02N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 3 Ω ID 1.8 A • New revolutionary high voltage technology • Ultra low gate charge P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated

04n60c3

Abstract: Q67040-S4366
Contextual Info: SPP04N60C3, SPB04N60C3 SPA04N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.95 Ω ID 4.5 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1

N1033 INFINEON

Abstract: n1033 IPB47N10S-33 IPP47N10S-33 25706 4525G IPI47N10S-33 PG-TO263-3-2
Contextual Info: IPI47N10S-33 IPP47N10S-33, IPB47N10S-33 SIPMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated 100 VDS P-TO262-3-1 V RDS on 33 m
ID 47 A P-TO263-3-2 P-TO220-3-1 • Green package (lead free)

2n0608

Abstract: 6040-H smd marking 58a SPB80N06S2-08 Q67060-S7430 200A 55V ANPS071E SPI80N06S2-08 SPP80N06S2-08 Q67060-S4284
Contextual Info: SPI80N06S2-08 SPP80N06S2-08,SPB80N06S2-08 OptiMOS
Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated P- TO262 -3-1 VDS 55 RDS on 8 m ID 80 A P- TO263 -3-2 Type Package Ordering Code

2N06H5

Contextual Info: SPP80N06S2-H5 SPB80N06S2-H5 OptiMOS =Power-Transistor Product Summary Feature
N-Channel
Enhancement mode
175°C operating temperature VDS 55 R DS on 5.5 m
ID 80 A P- TO263 -3-2
Avalanche rated V P- TO220 -3-1
dv/dt rated Type SPP80N06S2-H5 Package

2n0612

Abstract: smd diode 77a infineon 2n0612 BSPP77N06S2-12 SPP77N06S2-12 SPB77N06S2-12 BSPB77N06S2-12 80H100 55BA 2350pf
Contextual Info: SPP77N06S2-12 SPB77N06S2-12 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode R DS on 12 mΩ ID 80 A • 175°C operating temperature • Avalanche rated P- TO263 -3-2 P- TO220 -3-1 • dv/dt rated Type Package

2N06L11

Contextual Info: SPP80N06S2L-11 SPB80N06S2L-11 OptiMOS =Power-Transistor Product Summary Feature
N-Channel
Enhancement mode
Logic Level VDS 55 R DS on 11 m
ID 80 A P- TO263 -3-2
Avalanche rated V P- TO220 -3-1
dv/dt rated Type SPP80N06S2L-11 Package Ordering Code

16n50c3

Abstract: 16n50c3 equivalent SPB16N50C3 SPA16N50C3 SPI16N50C3 SPP16N50C3
Contextual Info: SPP16N50C3, SPB16N50C3 SPI16N50C3, SPA16N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.28 Ω ID 16 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262 P-TO263-3-2

ANPS071E

Abstract: SPB100N04S2L-03 SPP100N04S2L-03 PN04L03
Contextual Info: SPP100N04S2L-03 SPB100N04S2L-03 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 40 V • Enhancement mode RDS on max. SMD version 3 mΩ • Logic Level ID 100 • 175°C operating temperature P- TO263 -3-2 A P- TO220 -3-1 • Avalanche rated