TO263-3 PACKAGE Search Results

Contextual Info: FAX# 408 944-0970 TITLE 3 LEAD TO263 PACKAGE OUTLINE & RECOMMENDED LAND PATTERN DRAWING # TO263-3LD-PL-1 UNIT INCH/MM θ4 θ1 θ2 θ1 θ3 θ1 θ2 θ3 θ4 θ1 Rev A ECN 013112HC07 Originator S. YEH Change New release Reason New

Contextual Info: SPB10N10 SIPMOS Power-Transistor Product Summary Feature
N-Channel
Enhancement mode
175°C operating temperature VDS 100 R DS on 170 m
ID 10.3 A
Avalanche rated V P-TO263-3-2
dv/dt rated Type Package Ordering Code Marking SPB10N10 P-TO263-3-2

Q67042-S4102

Abstract: 21N10
Contextual Info: SPB21N10 SIPMOS Power-Transistor Product Summary Feature 100 VDS
N-Channel
Enhancement mode
175°C operating temperature V R DS on 80 m
ID 21 A
Avalanche rated P-TO263-3-2
dv/dt rated Type Package Ordering Code Marking SPB21N10 P-TO263-3-2 Q67042-S4102

35N10

Abstract: SPB35N10 SPP35N10
Contextual Info: SPB35N10 SIPMOS Power-Transistor Product Summary Feature 100 VDS
N-Channel
Enhancement mode
175°C operating temperature V R DS on 44 m
ID 35 A
Avalanche rated P-TO263-3-2
dv/dt rated Type Package Ordering Code Marking SPB35N10 P-TO263-3-2 Q67042-S4103

Carrier tape for TO263 package

Abstract: 16101
Contextual Info: Package Information TO263 DD2-PAK Outline Dimensions 3-pin TO263 Outline Dimensions A E L 2 E 1 C 2 D 1 2 D 1 L 3 L 3 L 4 0 ~ 5 L 1 A A e Symbol B B 2 D e ta il A E 2 C Z D e ta il A ( R o ta te d 9 0 ) Dimensions in mil Min. Nom. Max. A 170 ¾ 185 B 28

6R099

Abstract: ipb60r099cpa PG-TO263-3-2 IPB60R099 6R099A
Contextual Info: IPB60R099CPA CoolMOSTM Power Transistor Product Summary V DS R DS on ,max Q g,typ 600 V 0.105 Ω 60 nC Features • Worldwide best Rds,on in TO263 PG-TO263-3-2 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified

Contextual Info: IPB60R099CPA CoolMOS Power Transistor Product Summary V DS R DS on ,max Q g,typ 600 V 0.105 Ω 60 nC Features • Worldwide best Rds,on in TO263 PG-TO263-3-2 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified

PG-TO263-3-2

Abstract: PG-TO-263-3-2 IPB60R099CPA 6R099 6R099A IPB60R199CPA IPI60R099CPA IPB60R199
Contextual Info: IPB60R099CPA CoolMOS Power Transistor Product Summary V DS R DS on ,max Q g,typ 600 V 0.105 Ω 60 nC Features • Worldwide best Rds,on in TO263 PG-TO263-3-2 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified

Diode SMD ED 98

Abstract: SMD TRANSISTOR MARKING ed transistor smd marking ND PG-TO-263-3-2 PG-TO263-3-2 diode smd ED 21 SMD TRANSISTOR MARKING ME diode smd ed 18 diode smd ed 02 Energy Me
Contextual Info: IPB60R099CPA CoolMOS Power Transistor Product Summary V DS R DS on ,max Q g,typ ed nd me ns om sig ec de tr w e no rn fo Features 600 V 0.105 Ω 60 nC • Worldwide best Rds,on in TO263 PG-TO263-3-2 • Ultra low gate charge • Extreme dv/dt rated • High peak current capability

2N06LH5

Abstract: S6054 DIODE H5 SMD Q67060-S6055 smd diode H5 SPB80N06S2L-H5 ANPS071E SPP80N06S2L-H5
Contextual Info: SPP80N06S2L-H5 SPB80N06S2L-H5 OptiMOS =Power-Transistor Product Summary Feature 55 VDS
N-Channel R DS on
Enhancement mode ID
175°C operating temperature Type SPP80N06S2L-H5 Package Ordering Code P- TO220 -3-1 Q67060-S6054 Marking SPB80N06S2L-H5 P- TO263 -3-2 Q67060-S6055

35n10

Abstract: SMD marking code 35A
Contextual Info: SPI35N10 SPP35N10,SPB35N10 SIPMOS Power-Transistor Product Summary Feature 100 VDS
N-Channel
Enhancement mode
175°C operating temperature
Avalanche rated P-TO262-3-1 V R DS on 44 m
ID 35 A P-TO263-3-2 P-TO220-3-1
dv/dt rated Type SPP35N10 Package

DIODE H5 SMD

Abstract: 2n06h5 smd diode H5 70H100 ANPS071E SPB80N06S2-H5 SPP80N06S2-H5
Contextual Info: SPP80N06S2-H5 SPB80N06S2-H5 OptiMOSâ Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • 175°C operating temperature VDS 55 V RDS on 5.5 mΩ ID 80 A P- TO263 -3-2 • Avalanche rated P- TO220 -3-1 • dv/dt rated Type Package

2N06L11

Abstract: ANPS071E SPB80N06S2L-11 SPP80N06S2L-11 Q67060-S6035 2N06L
Contextual Info: SPP80N06S2L-11 SPB80N06S2L-11 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode R DS on 11 mΩ ID 80 A • Logic Level • Avalanche rated P- TO263 -3-2 P- TO220 -3-1 • dv/dt rated Type Package Ordering Code

2N06H5

Abstract: ANPS071E SPB80N06S2-H5 SPP80N06S2-H5
Contextual Info: SPP80N06S2-H5 SPB80N06S2-H5 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode R DS on 5.5 mΩ ID 80 A • 175°C operating temperature • Avalanche rated P- TO263 -3-2 P- TO220 -3-1 • dv/dt rated Type Package

07N60C3

Contextual Info: SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1 P-TO263-3-2

2n0609

Abstract: Q67060-S6025 Q67060-S6027 SPP80N06S2-09 3140PF 2N060 INFINEON PART MARKING to263
Contextual Info: SPP80N06S2-09 SPB80N06S2-09 OptiMOS =Power-Transistor Product Summary Feature
N-Channel
Enhancement mode
175°C operating temperature VDS 55 R DS on 9.1 m
ID 80 A P- TO263 -3-2
Avalanche rated V P- TO220 -3-1
dv/dt rated Type SPP80N06S2-09 Package

Contextual Info: TO220-3/TO263-3 Voltage Regulator Evaluation Board User’s Guide 2009 Microchip Technology Inc. DS51818A Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.

47N10

Abstract: INFINEON PART MARKING SPB47N10 SPI47N10 SPP47N10
Contextual Info: Preliminary data SPI47N10 SPP47N10,SPB47N10 SIPMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated 100 VDS P-TO262-3-1 RDS on 33 m
ID 47 A P-TO263-3-2 Type Package

2n0607

Abstract: 2n0607 equivalent OPTIMOS TRANSISTOR ANPS071E SPB80N06S2-07 SPI80N06S2-07 SPP80N06S2-07
Contextual Info: SPI80N06S2-07 SPP80N06S2-07,SPB80N06S2-07 OptiMOS
Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated P- TO262 -3-1 VDS 55 RDS on 6.6 m ID 80 A P- TO263 -3-2 Type Package

2N06L11

Abstract: S6035 ANPS071E SPB80N06S2L-11 SPP80N06S2L-11 INFINEON 2N06L11
Contextual Info: SPP80N06S2L-11 SPB80N06S2L-11 OptiMOSâ Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 55 V R DS on 11 mΩ ID 80 A P- TO263 -3-2 • Avalanche rated P- TO220 -3-1 • dv/dt rated Type SPP80N06S2L-11 Package

2n0609

Abstract: 80G60 2n0609 data sheet SPP80N06S209 Q67060-S6027 smd TRANSISTOR code marking 8K ANPS071E SPB80N06S2-09 SPP80N06S2-09 Q67060-S6025
Contextual Info: SPP80N06S2-09 SPB80N06S2-09 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode R DS on 9.1 mΩ ID 80 A • 175°C operating temperature • Avalanche rated P- TO263 -3-2 P- TO220 -3-1 • dv/dt rated Type Package

04n50c3

Abstract: SPA04N50C3
Contextual Info: SPP04N50C3, SPB04N50C3 SPA04N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.95 Ω ID 4.5 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1

04n60c3

Abstract: 04N60C3 equivalent smd transistor G18 04n60 04N60C SPB04N60C3 SPA04N60C3 SPP04N60C3 transistor C 331
Contextual Info: SPP04N60C3, SPB04N60C3 SPA04N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.95 Ω ID 4.5 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1

2N0605

Abstract: SPI80N06S2-05 SPB80N06S2-05 SPP80N06S2-05 2N060
Contextual Info: Preliminary data OptiMOSâ Power-Transistor SPI80N06S2-05 SPP80N06S2-05,SPB80N06S2-05 Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • 175°C operating temperature ID • Avalanche rated P-TO262-3-1 max. SMD version P-TO263-3-2 55