TO263-3 PACKAGE Search Results

DIODE H5 SMD

Abstract: 2n06h5 smd diode H5 70H100 ANPS071E SPB80N06S2-H5 SPP80N06S2-H5
Contextual Info: SPP80N06S2-H5 SPB80N06S2-H5 OptiMOSâ Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • 175°C operating temperature VDS 55 V RDS on 5.5 mΩ ID 80 A P- TO263 -3-2 • Avalanche rated P- TO220 -3-1 • dv/dt rated Type Package

Contextual Info: TO220-3/TO263-3 Voltage Regulator Evaluation Board User’s Guide 2009 Microchip Technology Inc. DS51818A Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.

47N10

Abstract: INFINEON PART MARKING SPB47N10 SPI47N10 SPP47N10
Contextual Info: Preliminary data SPI47N10 SPP47N10,SPB47N10 SIPMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated 100 VDS P-TO262-3-1 RDS on 33 m
ID 47 A P-TO263-3-2 Type Package

2n0607

Abstract: 2n0607 equivalent OPTIMOS TRANSISTOR ANPS071E SPB80N06S2-07 SPI80N06S2-07 SPP80N06S2-07
Contextual Info: SPI80N06S2-07 SPP80N06S2-07,SPB80N06S2-07 OptiMOS
Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated P- TO262 -3-1 VDS 55 RDS on 6.6 m ID 80 A P- TO263 -3-2 Type Package

2N06L11

Abstract: S6035 ANPS071E SPB80N06S2L-11 SPP80N06S2L-11 INFINEON 2N06L11
Contextual Info: SPP80N06S2L-11 SPB80N06S2L-11 OptiMOSâ Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 55 V R DS on 11 mΩ ID 80 A P- TO263 -3-2 • Avalanche rated P- TO220 -3-1 • dv/dt rated Type SPP80N06S2L-11 Package

02N60C3

Abstract: SPB02N60C3 SPP02N60C3
Contextual Info: SPP02N60C3 SPB02N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 3 Ω ID 1.8 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated

2n0608

Abstract: 6040-H smd marking 58a SPB80N06S2-08 Q67060-S7430 200A 55V ANPS071E SPI80N06S2-08 SPP80N06S2-08 Q67060-S4284
Contextual Info: SPI80N06S2-08 SPP80N06S2-08,SPB80N06S2-08 OptiMOS
Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated P- TO262 -3-1 VDS 55 RDS on 8 m ID 80 A P- TO263 -3-2 Type Package Ordering Code

16n50c3

Abstract: 16n50c3 equivalent SPB16N50C3 SPA16N50C3 SPI16N50C3 SPP16N50C3
Contextual Info: SPP16N50C3, SPB16N50C3 SPI16N50C3, SPA16N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.28 Ω ID 16 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262 P-TO263-3-2

07n60c3

Abstract: 07N60C3 equivalent s4409 07n60c SPA07N60C3 SPB07N60C3 SPI07N60C3 SPP07N60C3
Contextual Info: SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1 P-TO263-3-2

2n04h4

Abstract: infineon 2N04H4 DIODE h4 ANPS071E SPB80N04S2-H4 SPI80N04S2-H4 SPP80N04S2-H4
Contextual Info: SPI80N04S2-H4 SPP80N04S2-H4,SPB80N04S2-H4 OptiMOS
Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated P- TO262 -3-1 VDS 40 RDS on 4 m ID 80 A P- TO263 -3-2 Type Package Ordering Code

2n06l05

Abstract: ANPS071E SPB80N06S2L-05 SPI80N06S2L-05 SPP80N06S2L-05
Contextual Info: SPI80N06S2L-05 SPP80N06S2L-05,SPB80N06S2L-05 OptiMOS
Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level  Avalanche rated  dv/dt rated P- TO262 -3-1 VDS 55 RDS on max. SMD version 4.5 m ID 80 A P- TO263 -3-2 Type Package

04n60c3

Abstract: 04N60C 04N60C3 equivalent 04N60 Q67040-S4407 SPA04N60C3 Q67040-S4366 SPB04N60C3 SPP04N60C3 SPB04N60C3 SMD
Contextual Info: Final data SPP04N60C3, SPB04N60C3 SPA04N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.95 Ω ID 4.5 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1

03N60C3

Abstract: SPB03N60C3 03n60 SPP03N60C3 SPA03N60C3 ID32 transistor smd list spa03n
Contextual Info: Final data SPP03N60C3, SPB03N60C3 SPA03N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 1.4 Ω ID 3.2 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1

SPB10N10L

Abstract: SPP10N10L 10N10L IEC61249-2-21 P-TO263-3 SPB10N10LG SMD 81A
Contextual Info: SPB10N10L G SIPMOSTM Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated;  dv/dt rated; Halogen-free according to IEC61249-2-21 Type Package SPB10N10L P-TO263-3 VDS 100 V

20n60s5

Abstract: 20n60s transistor 20N60s5 20n60 20n60s5 datasheet Q67040-S4751 SPP20N60S5 SPB20N60S5
Contextual Info: SPP20N60S5 SPB20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 VDS 600 V RDS(on) 0.19 Ω ID 20 A P-TO263-3-2 • Ultra low gate charge P-TO220-3-1 • Periodic avalanche rated

11N60S5 equivalent

Abstract: 11N60S5 TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 P-TO263-3-2 DSA003760
Contextual Info: SPP11N60S5, SPB11N60S5 SPI11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge P-TO262 • Periodic avalanche rated VDS 600 V RDS on 0.38 Ω ID 11 A P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated

ANPS071E

Abstract: SPB100N04S2L-03 SPP100N04S2L-03
Contextual Info: SPP100N04S2L-03 SPB100N04S2L-03 OptiMOSâ Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version ID • Logic Level V 3 mΩ 100 P- TO263 -3-2 • 175°C operating temperature 40 A P- TO220 -3-1 • Avalanche rated

2N0807

Abstract: Q67060-S6082 s4264 2n08 120d-22 INFINEON PART MARKING to263 ANPS071E SPB80N08S2-07 SPI80N08S2-07 SPP80N08S2-07
Contextual Info: SPI80N08S2-07 SPP80N08S2-07,SPB80N08S2-07 OptiMOS
Power-Transistor Product Summary Feature 75 VDS
N-Channel RDS on
Enhancement mode
175°C operating temperature
Avalanche rated max. SMD version ID P- TO262 -3-1 P- TO263 -3-2 V 7.1 m
80 A P- TO220 -3-1

12N50C3

Abstract: TRANSISTOR 12N50C3 12n50c Q67040-S4641 TRANSISTOR SMD MARKING CODE 7A SPB12N50C3 SPA12N50C3 SPI12N50C3 SPP12N50C3 P-TO263-3-2
Contextual Info: SPP12N50C3, SPB12N50C3 SPI12N50C3, SPA12N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262 P-TO263-3-2

2n0404

Abstract: SPB80N04S2-04 SPP80N04S2-04
Contextual Info: SPP80N04S2-04 SPB80N04S2-04 Preliminary data OptiMOS =Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version •=175°C operating temperature ID • Avalanche rated P-TO263-3-2 40 V 3.4 mΩ 80 A P-TO220-3-1

2n0612

Abstract: smd diode marking 77 smd diode 77a S6030 BSPP77N06S2-12 140W SPB77N06S2-12 SPP77N06S2-12
Contextual Info: SPP77N06S2-12 SPB77N06S2-12 Preliminary data OptiMOS
=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 RDS on 12 m
ID 77 A P-TO263-3-2 Type Package Ordering Code

2n0609

Abstract: 2n0609 data sheet SPB80N06S2-09 SPP80N06S2-09
Contextual Info: SPP80N06S2-09 SPB80N06S2-09 Preliminary data OptiMOS
=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 RDS on 9.1 m
ID 80 A P-TO263-3-2 Type Package Ordering Code

2n0612

Abstract: smd diode 77a S6030 Q67060-S6030 diode 77a BSPP77N06S2-12 SPB77N06S2-12 SPP77N06S2-12 77A DIODE Q67060-S6029
Contextual Info: SPP77N06S2-12 SPB77N06S2-12 OptiMOS
Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 RDS on 12 m ID 80 A P- TO263 -3-2 Type Package Ordering Code SPP77N06S2-12

smd marking 58a

Abstract: 80N10L IEC61249-2-21 SPB80N10L SPP80N10L
Contextual Info: SPB80N10L G SIPMOSΤΜPower-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated; Halogen-free according to IEC61249-2-21 Type Package SPB80N10L P-TO263-3 100 VDS V RDS on