TO-5 PACKAGE POWER TRANSISTOR Search Results

2n5153

Contextual Info: PNP Power Silicon Transistor 2N5151, 2N5151L & 2N5153, 2N5153L Features • Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/545 • TO-5 Package: 2N5151L, 2N5153L TO-39 TO-205AD Package: 2N5151, 2N5153 Maximum Ratings (TC = +25°C unless otherwise noted)

pnp hfe 120-240

Abstract: 2SA1217 2SC2877 2SC28
Contextual Info: JMnic Product Specification 2SA1217 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SC2877 ・Good linearity of hFE APPLICATIONS ・Audio frequency power amplifier ・Low speed switching ・Suitable for output stage of 5 watts

2SA1217

Abstract: 2SC2877
Contextual Info: SavantIC Semiconductor Product Specification 2SA1217 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SC2877 ·Good linearity of hFE APPLICATIONS ·Audio frequency power amplifier ·Low speed switching ·Suitable for output stage of 5 watts

2SC2877

Abstract: 2SA1217
Contextual Info: SavantIC Semiconductor Product Specification 2SC2877 Silicon NPN Power Transistors DESCRIPTION •With TO-126 package ·Complement to type 2SA1217 ·Good linearity of hFE APPLICATIONS ·Audio frequency power amplifier ·Low speed switching ·Suitable for output stage of 5 watts

2SC2877

Abstract: 2SA1217
Contextual Info: Inchange Semiconductor Product Specification 2SC2877 Silicon NPN Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SA1217 ·Good linearity of hFE APPLICATIONS ·Audio frequency power amplifier ·Low speed switching ·Suitable for output stage of 5 watts

2SA1217

Abstract: 2SC2877
Contextual Info: Inchange Semiconductor Product Specification 2SA1217 Silicon PNP Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SC2877 ·Good linearity of hFE APPLICATIONS ·Audio frequency power amplifier ·Low speed switching ·Suitable for output stage of 5 watts

L0335

Contextual Info: , Una. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N5010 Package TO-5 NPN Transistor Symbol Power Absolute Maximum Ratings Power Dissipation Collector Current 'c Breakdown Voltage Collector-to-Base

2SC1096

Contextual Info: Product Specification www.jmnic.com 2SC1096 Silicon NPN Power Transistors DESCRIPTION ・With TO-202 package ・Low breakdown voltage ・High current ・High fT APPLICATIONS ・For audio frequency power amplifier and low speed switching applications ・Suitable for output stages of 3 to 5 watts

2SC1096

Abstract: 2SC1096 hfe ic 4060 2sc1096 equivalent 2SC1096 M
Contextual Info: SavantIC Semiconductor Product Specification 2SC1096 Silicon NPN Power Transistors DESCRIPTION •With TO-202 package ·Low breakdown voltage ·High current ·High fT APPLICATIONS ·For audio frequency power amplifier and low speed switching applications ·Suitable for output stages of 3 to 5 watts

2sc1098

Abstract: 2SC1098A
Contextual Info: Product Specification www.jmnic.com 2SC1098 2SC1098A Silicon NPN Power Transistors DESCRIPTION ・With TO-202 package ・High Voltage ・High transition frequency APPLICATIONS ・Audio frequency power amplifier ・Low speed switching ・Suitable for output stages of 5~17W small

Contextual Info: NPN Power Silicon Transistor 2N5152, 2N5152L & 2N5154, 2N5154L Features • Available in commercial, JAN, JANTX, JANTXV, JANS and JANSR 100K rads Si per MIL-PRF-19500/544 • TO-5 Package: 2N5152L, 2N5154L TO-39 (TO-205AD) Package: 2N5152, 2N5154 Maximum Ratings (TC = +25°C unless otherwise noted)

stk 490 110

Abstract: stk 490 310 stk 490 070 4830A k4013 Transistor y2n stk 490 040 stk*470 090 stk 470 070 STK 290 010
Contextual Info: Ordering number : EN4830A Thick Film Hybrid 1C No.4830A S TK 400-020 3-Channel AF Power Amplifier Split Power Supply ( 1 5 W + 1 5 W + 1 5 W min, THD = 0.4 %) Overview Package Dimensions Now, thick-film audio power amplifier ICs are available with pin-com patibility to permit a single PCB to be

2sc1098

Abstract: 2SC1098A
Contextual Info: Inchange Semiconductor Product Specification 2SC1098 2SC1098A Silicon NPN Power Transistors DESCRIPTION ・With TO-202 package ・High Voltage ・High transition frequency APPLICATIONS ・Audio frequency power amplifier ・Low speed switching ・Suitable for output stages of 5~17W small

2sc1098

Abstract: 2SC1098A ic 4060
Contextual Info: SavantIC Semiconductor Product Specification 2SC1098 2SC1098A Silicon NPN Power Transistors DESCRIPTION •With TO-202 package ·High Voltage ·High transition frequency APPLICATIONS ·Audio frequency power amplifier ·Low speed switching ·Suitable for output stages of 5~17W small

BD189

Abstract: BD190
Contextual Info: SavantIC Semiconductor Product Specification BD190 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·High current ·Complement to type BD189 APPLICATIONS ·For use in 5 to 10 watt audio amplifiers utilizing complementary or quasi complementary circuits.

Contextual Info: MP4502 SILICON NPN EPITAXIAL T Y P E DARLINGTON POWER TRANSISTOR 4 IN 1 INDUSTRIAL APPLICATIONS Unit in nun o HIGH POWER SWITCHING APPLICATIONS, o HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING. 7.5 5 as 5 FEATURES 03.2 • Package with Heat Sink Isolated to Lead.

Contextual Info: WJ-EA53-2 5 to 500 MHz TO-5 CASCADABLE AMPLIFIER ♦ HIGH GAIN: 19 dB TYP. ♦ MEDIUM OUTPUT POWER: +11 dBm (TYP.) ♦ VERY SMALL SIZE: TO-5 PACKAGE Specifications* Outline Drawings Typical Characteristic Frequency (Min.) Small Signal Gain (Min.) Gain Flatness (Max.)

MP5001

Contextual Info: SILICON NPN/PNP EPITAXIAL TYPE POWER TRANSISTOR 5 IN 1 MP5001 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS. • Package with Heat Sink Isolated to Lead. . High Collector Power Dissipation. : P t =10W • High Collector Current

2N3418

Abstract: 2N3419 tata ak 90 2N3420 2N3421 TIX3033 TNR*G TIX3034 TIX3035 TIX3036
Contextual Info: TYPES 2N3418, 2N3419, 2N3420, 2N3421 N-P-N EPITAXIAL PLANAR SILICON MEDIUM-POWER TRANSISTORS HIGH-FREQUENCY MEOIUM-POWER TRANSISTORS Formerly TIX3033, TIX3034, TIX3035, TIX3036 • High-Power Dissipationin TO-5 Package: 15 watts at Tc = 100‘ C • Low-Leakage Current:

X9116WM8I-2.7T1

Contextual Info: Transistors Selection Guide by Applications and Functions •Switching Power Transistors Appli­ V cbo VcEO Io VcE (sat) cation (V) (V) (A) (V) 150/200/ 250 80 5 <1.6 Package (No.) lc tf (/JS) Ib MT3 (D43) (A) (mA) 5 IW MT4 (D46) TO TO-220E TO-220D N Type

2SD2008

Abstract: 2SD2006 transistor 2SD2006 2Sb1333 2SD2010 2SB1482 2SB1515 2SB1306 transistor 2SD2004 2SB1331
Contextual Info: Transistors TO-92L • T0-92LS • MRT TO-92L is a high power version of TO -92 and TO-92LS is a slimmed TO-92L. MRT is a 1.2W package power taped transistor designed for use with an automatic placement machine. Pc W (T a = 2 5 °C ) P a ckage Application

ASI3005

Abstract: ASI10540
Contextual Info: ASI3005 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The is Designed for General Purpose Class C Power Amplifier Applications up to 3500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 4.5 dB min. at 5 W / 3,000 MHz • Hermetic Microstrip Package

TIP121

Abstract: TIP122 TIP29A TIP29B TIP29C TIP31 TIP31A TIP31B TIP31C TIP41
Contextual Info: TO-220 Power Package Transistors NPN Maximum Ratings Type No. Electrical Characteristics (Ta=25'C, Unless Otherwise Specified) h FE Mn Max 'c80 (MA) Max ^C8 « (V) 5 200 60 1000 1000 0.5 3 3 3 2 4 3 5 200 65 5 200 80 1000 1000 3 0.5 3 3 2 4 3 5 200 5 65

MG75H2CL1

Contextual Info: MG75H2CL1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 5 -M4 FEATURES : . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package.